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+clc();
+clear;
+//Given :
+ni1 = 2.5*10^19; // per m^3 for Ge
+ni2 = 1.5*10^16; // per m^3 for Si
+mu_e1 = 0.38; // mobility of free electrons for Ge in m^2/Vs
+mu_h1 = 0.18; //mobility of holes for Ge in m^2/Vs
+mu_e2 = 0.13;//mobility of free electrons for Si in m^2/Vs
+mu_h2 = 0.05;//mobility of holes for Si in m^2/Vs
+e = 1.6*10^-19; // charge of an electron in C
+sigma1 = ni1*e*(mu_e1 + mu_h1); // intrinsic conductivity in mho m^-1 for Ge
+sigma2 = ni2*e*(mu_e2 + mu_h2);// intrinsic conductivity in mho m^-1 for Si
+rho1 = 1/sigma1; //intrinsic resistivity in ohm m for Ge
+rho2 = 1/sigma2;//intrinsic resistivity in ohm m for Si
+printf("Resistivity of Ge %.3f ohm m \n",rho1);
+printf("Resistivity of Si %.3f x 10^3 ohm m",rho2*10^-3);