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| author | priyanka | 2015-06-24 15:03:17 +0530 |
|---|---|---|
| committer | priyanka | 2015-06-24 15:03:17 +0530 |
| commit | b1f5c3f8d6671b4331cef1dcebdf63b7a43a3a2b (patch) | |
| tree | ab291cffc65280e58ac82470ba63fbcca7805165 /181/CH3/EX3.3/example3_3.sce | |
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| -rwxr-xr-x | 181/CH3/EX3.3/example3_3.sce | 25 |
1 files changed, 25 insertions, 0 deletions
diff --git a/181/CH3/EX3.3/example3_3.sce b/181/CH3/EX3.3/example3_3.sce new file mode 100755 index 000000000..53eaccfaa --- /dev/null +++ b/181/CH3/EX3.3/example3_3.sce @@ -0,0 +1,25 @@ +// Calculate break region
+// Basic Electronics
+// By Debashis De
+// First Edition, 2010
+// Dorling Kindersley Pvt. Ltd. India
+// Example 3-3 in page 145
+
+clear; clc; close;
+
+// Given data
+R=10^4; // Factor multiplied with dynamic resistance of diode
+Vt=26; // Thermal voltage in volts
+eta1=2; // Constant at room temperature for Si
+eta2=1; // Constant at room temperature for Ge
+
+// Calculation
+printf("r1/r2 = 10^4\n");
+V1=eta1*Vt*4*2.3;
+V2=eta2*Vt*4*2.3;
+printf("Break region for silicon = %0.0f mV\n",V1);
+printf("Break region for Germanium = %0.0f mV",V2);
+
+// Result
+// Break region for silicon = 478 mV
+// Break region for Germanium = 239 mV
\ No newline at end of file |