From b1f5c3f8d6671b4331cef1dcebdf63b7a43a3a2b Mon Sep 17 00:00:00 2001
From: priyanka
Date: Wed, 24 Jun 2015 15:03:17 +0530
Subject: initial commit / add all books

---
 181/CH3/EX3.3/example3_3.sce | 25 +++++++++++++++++++++++++
 1 file changed, 25 insertions(+)
 create mode 100755 181/CH3/EX3.3/example3_3.sce

(limited to '181/CH3/EX3.3/example3_3.sce')

diff --git a/181/CH3/EX3.3/example3_3.sce b/181/CH3/EX3.3/example3_3.sce
new file mode 100755
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+++ b/181/CH3/EX3.3/example3_3.sce
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+// Calculate break region
+// Basic Electronics
+// By Debashis De
+// First Edition, 2010
+// Dorling Kindersley Pvt. Ltd. India
+// Example 3-3 in page 145
+
+clear; clc; close;
+
+// Given data
+R=10^4; // Factor multiplied with dynamic resistance of diode
+Vt=26; // Thermal voltage in volts
+eta1=2; // Constant at room temperature for Si
+eta2=1; // Constant at room temperature for Ge
+
+// Calculation
+printf("r1/r2 = 10^4\n");
+V1=eta1*Vt*4*2.3;
+V2=eta2*Vt*4*2.3;
+printf("Break region for silicon = %0.0f mV\n",V1);
+printf("Break region for Germanium = %0.0f mV",V2);
+
+// Result
+// Break region for silicon = 478 mV
+// Break region for Germanium = 239 mV 
\ No newline at end of file
-- 
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