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//Example number 9.8, Page number 206
clc;clear;
close;
//Variable declaration
sigma=2.12; //conductivity(ohm-1 m-1)
T=300; //temperature(K)
e=1.6*10**-19; //charge(c)
mew_e=0.36; //electron mobility(m**2/Vs)
mew_h=0.7; //hole mobility(m**2/Vs)
C=4.83*10**21;
KB=1.38*10**-23; //boltzmann constant
//Calculation
ni=sigma/(e*(mew_e+mew_h)); //carrier density(per m**3)
x=C*T**(3/2)/ni;
Eg=2*KB*T*log(x)/e; //energy gap(eV)
//Result
printf("carrier density is %.2e per m^3",ni)
printf("\n energy gap is %.2f eV",Eg)
//answer in the book is wrong
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