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+//Example number 9.8, Page number 206
+
+clc;clear;
+close;
+
+//Variable declaration
+sigma=2.12;     //conductivity(ohm-1 m-1)
+T=300;      //temperature(K)
+e=1.6*10**-19;     //charge(c)
+mew_e=0.36;        //electron mobility(m**2/Vs)
+mew_h=0.7;       //hole mobility(m**2/Vs)
+C=4.83*10**21;
+KB=1.38*10**-23;   //boltzmann constant
+//Calculation
+ni=sigma/(e*(mew_e+mew_h));     //carrier density(per m**3)
+x=C*T**(3/2)/ni;
+Eg=2*KB*T*log(x)/e;      //energy gap(eV)
+//Result
+printf("carrier density is %.2e per m^3",ni)
+printf("\n energy gap is %.2f eV",Eg)
+//answer in the book is wrong