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//Example number 9.5, Page number 204
clc;clear;
close;
//Variable declaration
w=72.6; //atomic weight
e=1.6*10**-19; //charge(c)
mew_e=0.4; //electron mobility(m**2/Vs)
mew_h=0.2; //hole mobility(m**2/Vs)
T=300; //temperature(K)
x=4.83*10**21;
Eg=0.7; //band gap(eV)
y=0.052;
//Calculation
ni=x*(T**(3/2))*exp(-Eg/y); //carrier density(per m**3)
sigma=ni*e*(mew_e+mew_h); //conductivity(ohm-1 m-1)
//Result
printf("carrier density is %.2e per m^3",ni)
printf("\n conductivity is %.2f (ohm-m)^-1",sigma)
//answer in the book varies due to rounding off errors
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