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+//Example number 9.5, Page number 204
+
+clc;clear;
+close;
+
+//Variable declaration
+w=72.6;       //atomic weight
+e=1.6*10**-19;     //charge(c)
+mew_e=0.4;        //electron mobility(m**2/Vs)
+mew_h=0.2;       //hole mobility(m**2/Vs)
+T=300;         //temperature(K)
+x=4.83*10**21;
+Eg=0.7;      //band gap(eV)
+y=0.052;
+//Calculation
+ni=x*(T**(3/2))*exp(-Eg/y);     //carrier density(per m**3)
+sigma=ni*e*(mew_e+mew_h);         //conductivity(ohm-1 m-1)
+//Result
+printf("carrier density is %.2e per m^3",ni)
+printf("\n conductivity is %.2f (ohm-m)^-1",sigma)
+//answer in the book varies due to rounding off errors