blob: eaa113d5f4efe0beafbafd711895341252158c1a (
plain)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
|
//Example number 9.15, Page number 209
clc;clear;
close;
//Variable declaration
I=3*10**-3; //current(A)
RH=3.66*10**-4; //hall coefficient(m**3/C)
e=1.6*10**-19; //charge(c)
d=2*10**-2;
z=1*10**-3;
B=1; //magnetic field(wb/m**2)
//Calculation
w=d*z; //width(m**2)
A=w; //area(m**2)
EH=RH*I*B/A;
VH=EH*d*10**3; //hall voltage(mV)
n=1/(RH*e); //charge carrier concentration(per m**3)
//Result
printf("hall voltage is %.1f mH",VH)
printf("\n charge carrier concentration is %.2e per m^3",n)
|
