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author | prashantsinalkar | 2017-10-10 12:27:19 +0530 |
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committer | prashantsinalkar | 2017-10-10 12:27:19 +0530 |
commit | 7f60ea012dd2524dae921a2a35adbf7ef21f2bb6 (patch) | |
tree | dbb9e3ddb5fc829e7c5c7e6be99b2c4ba356132c /3768/CH9/EX9.15/Ex9_15.sce | |
parent | b1f5c3f8d6671b4331cef1dcebdf63b7a43a3a2b (diff) | |
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initial commit / add all books
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diff --git a/3768/CH9/EX9.15/Ex9_15.sce b/3768/CH9/EX9.15/Ex9_15.sce new file mode 100644 index 000000000..eaa113d5f --- /dev/null +++ b/3768/CH9/EX9.15/Ex9_15.sce @@ -0,0 +1,21 @@ +//Example number 9.15, Page number 209 + +clc;clear; +close; + +//Variable declaration +I=3*10**-3; //current(A) +RH=3.66*10**-4; //hall coefficient(m**3/C) +e=1.6*10**-19; //charge(c) +d=2*10**-2; +z=1*10**-3; +B=1; //magnetic field(wb/m**2) +//Calculation +w=d*z; //width(m**2) +A=w; //area(m**2) +EH=RH*I*B/A; +VH=EH*d*10**3; //hall voltage(mV) +n=1/(RH*e); //charge carrier concentration(per m**3) +//Result +printf("hall voltage is %.1f mH",VH) +printf("\n charge carrier concentration is %.2e per m^3",n) |