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authorprashantsinalkar2017-10-10 12:27:19 +0530
committerprashantsinalkar2017-10-10 12:27:19 +0530
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+//Example number 9.15, Page number 209
+
+clc;clear;
+close;
+
+//Variable declaration
+I=3*10**-3; //current(A)
+RH=3.66*10**-4; //hall coefficient(m**3/C)
+e=1.6*10**-19; //charge(c)
+d=2*10**-2;
+z=1*10**-3;
+B=1; //magnetic field(wb/m**2)
+//Calculation
+w=d*z; //width(m**2)
+A=w; //area(m**2)
+EH=RH*I*B/A;
+VH=EH*d*10**3; //hall voltage(mV)
+n=1/(RH*e); //charge carrier concentration(per m**3)
+//Result
+printf("hall voltage is %.1f mH",VH)
+printf("\n charge carrier concentration is %.2e per m^3",n)