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//Example number 9.11, Page number 207
clc;clear;
close;
//Variable declaration
ni=2.5*10**19; //charge carriers(per m**3)
r=10**-6; //ratio
e=1.6*10**-19; //charge(c)
mew_e=0.36; //electron mobility(m**2/Vs)
mew_h=0.18; //hole mobility(m**2/Vs)
N=4.2*10**28; //number of atoms(per m**3)
//Calculation
Ne=r*N; //number of impurity atoms(per m**3)
Nh=ni**2/Ne;
sigma=(Ne*e*mew_e)+(Nh*e*mew_h); //conductivity(ohm m)
rho=1/sigma; //resistivity of material(per ohm m)
//Result
printf("resistivity of material is %.4e ohm-m",rho)
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