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+//Example number 9.11, Page number 207
+
+clc;clear;
+close;
+
+//Variable declaration
+ni=2.5*10**19;      //charge carriers(per m**3)
+r=10**-6;    //ratio
+e=1.6*10**-19;     //charge(c)
+mew_e=0.36;        //electron mobility(m**2/Vs)
+mew_h=0.18;       //hole mobility(m**2/Vs)
+N=4.2*10**28;     //number of atoms(per m**3)
+//Calculation
+Ne=r*N;       //number of impurity atoms(per m**3)
+Nh=ni**2/Ne;    
+sigma=(Ne*e*mew_e)+(Nh*e*mew_h);      //conductivity(ohm m)
+rho=1/sigma;     //resistivity of material(per ohm m)
+//Result
+printf("resistivity of material is %.4e ohm-m",rho)