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clc();
clear;
// To calculate the resistivity of doped Ge
ni=2.5*10^19; //density of charge carriers in m^3
r=1/(10^6); //ratio
e=1.6*10^-19;
mew_e=0.36; //mobility of electrons in m^2/Vs
mew_h=0.18; //mobility of holes in m^2/Vs
N=4.2*10^28; //number of Si atoms per m^3
Ne=r*N;
printf("number of impurity atoms per m^3 is");
disp(Ne);
Nh=(ni^2)/Ne;
sigma=(Ne*e*mew_e)+(Nh*e*mew_h);
rho=1/sigma;
printf("the resistivity of doped Ge is %f ohm m",rho);
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