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+clc();
+clear;
+// To calculate the resistivity of doped Ge
+ni=2.5*10^19; //density of charge carriers in m^3
+r=1/(10^6); //ratio
+e=1.6*10^-19;
+mew_e=0.36; //mobility of electrons in m^2/Vs
+mew_h=0.18; //mobility of holes in m^2/Vs
+N=4.2*10^28; //number of Si atoms per m^3
+Ne=r*N;
+printf("number of impurity atoms per m^3 is");
+disp(Ne);
+Nh=(ni^2)/Ne;
+sigma=(Ne*e*mew_e)+(Nh*e*mew_h);
+rho=1/sigma;
+printf("the resistivity of doped Ge is %f ohm m",rho);