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+//Chapter 12 : Semiconductor Physics
+
+clear;
+
+//Variable declaration
+myun=0.36 //mobility of electrons
+myup=0.14 //mobility of holes
+e=1.6*10**-19
+rhoi=2.2 //resistivity
+
+//Calculations
+ni=1/(rhoi*e*(myun+myup))/10**18
+
+//Result
+mprintf("Intrinsic concentration= %.3f*10**18 m**-3",ni)
+