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//Chapter 12 : Semiconductor Physics
clear;
//Variable declaration
myun=0.36 //mobility of electrons
myup=0.14 //mobility of holes
e=1.6*10**-19
rhoi=2.2 //resistivity
//Calculations
ni=1/(rhoi*e*(myun+myup))/10**18
//Result
mprintf("Intrinsic concentration= %.3f*10**18 m**-3",ni)
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