1 files changed, 30 insertions, 0 deletions
diff --git a/377/CH14/EX14.1/14_1.sce b/377/CH14/EX14.1/14_1.sce
new file mode 100644
index 000000000..6d27e956f
--- /dev/null
+++ b/377/CH14/EX14.1/14_1.sce
@@ -0,0 +1,30 @@
+disp("φs=χsi+Eg+(Ev-Ef)");
+k=0.026;  //say k=K*T/q
+p=7*10^14;
+Nv=3.08*10^19;
+a=4.05;  //say a=χsi
+b=1.125;  //say b=Eg
+c=k*log(p/Nv);  //say c=Ev-Ef
+printf('\n The value of Ev-Ef is %fV',c);
+d=a+b+c;  //say d=φs
+printf('\n The value of φs is %fV\n',d);
+disp("φms=φm-φs");
+f=4.05;  //say f=φm
+g=f-d;  //say g=φms
+printf('\n The value of φms is %1.2fV\n',g);
+eox=3.9*8.854*10^-14;  //say eox=Єox
+dox=200*10^-7;
+cox=eox/dox;
+printf('\n The oxide capacitance per unit area is %f*10^-8F/cm^2',cox*10^8);
+printf('\n The value of flat band voltage is %1.2fV\n',g);
+disp("Ld=sqrt(Є*Vt/(q*Na));");
+e=11.7*8.854*10^-14;
+Vt=0.025852;
+q=1.6*10^-19;
+Na=7*10^14;
+Ld=sqrt(e*Vt/(q*Na));
+printf('\n The value of Ld is %f*10^-5cm\n',Ld*10^5);
+esi=11.7*8.854*10^-14;
+Cfb=1/((dox/eox)+(Ld/esi));
+printf('\n The capacitance per unit area at the flat band condition is %f*10^-8F/cm^2\n',Cfb*10^8);
+printf('\n The capacitance per unit area for deep accumulation of majority carriers Caccum=%f*10^-8F/cm^2',cox*10^8); 
+\ No newline at end of file