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+//Example number 9.15, Page number 209
+
+clc;clear;
+close;
+
+//Variable declaration
+I=3*10**-3;    //current(A)
+RH=3.66*10**-4;    //hall coefficient(m**3/C)
+e=1.6*10**-19;     //charge(c)
+d=2*10**-2;
+z=1*10**-3;
+B=1;        //magnetic field(wb/m**2)
+//Calculation
+w=d*z;     //width(m**2)
+A=w;     //area(m**2)
+EH=RH*I*B/A;    
+VH=EH*d*10**3;     //hall voltage(mV)
+n=1/(RH*e);     //charge carrier concentration(per m**3)
+//Result
+printf("hall voltage is %.1f mH",VH)
+printf("\n charge carrier concentration is %.2e per m^3",n)