diff options
Diffstat (limited to '3755/CH8')
| -rw-r--r-- | 3755/CH8/EX8.1/Ex8_1.sce | 17 | ||||
| -rw-r--r-- | 3755/CH8/EX8.10/Ex8_10.sce | 19 | ||||
| -rw-r--r-- | 3755/CH8/EX8.11/Ex8_11.sce | 17 | ||||
| -rw-r--r-- | 3755/CH8/EX8.12/Ex8_12.sce | 17 | ||||
| -rw-r--r-- | 3755/CH8/EX8.3/Ex8_3.sce | 19 | ||||
| -rw-r--r-- | 3755/CH8/EX8.4/Ex8_4.sce | 18 | ||||
| -rw-r--r-- | 3755/CH8/EX8.5/Ex8_5.sce | 15 | ||||
| -rw-r--r-- | 3755/CH8/EX8.6/Ex8_6.sce | 14 | ||||
| -rw-r--r-- | 3755/CH8/EX8.7/Ex8_7.sce | 14 | ||||
| -rw-r--r-- | 3755/CH8/EX8.8/Ex8_8.sce | 15 | ||||
| -rw-r--r-- | 3755/CH8/EX8.9/Ex8_9.sce | 15 |
11 files changed, 180 insertions, 0 deletions
diff --git a/3755/CH8/EX8.1/Ex8_1.sce b/3755/CH8/EX8.1/Ex8_1.sce new file mode 100644 index 000000000..40c773e17 --- /dev/null +++ b/3755/CH8/EX8.1/Ex8_1.sce @@ -0,0 +1,17 @@ +clear
+//
+//
+//
+
+//Variable declaration
+ni=2.5*10^19; //concentration(per m^3)
+d=4.4*10^28; //density(per m^3)
+n=4*10^8; //number of Ge atoms
+
+//Calculation
+Na=d/n; //density of acceptor atoms
+np=ni^2/Na;
+npbyni=np/ni; //ratio of density of electrons
+
+//Result
+printf("\n ratio of density of electrons is %0.3f ",npbyni)
diff --git a/3755/CH8/EX8.10/Ex8_10.sce b/3755/CH8/EX8.10/Ex8_10.sce new file mode 100644 index 000000000..324a72a12 --- /dev/null +++ b/3755/CH8/EX8.10/Ex8_10.sce @@ -0,0 +1,19 @@ +clear
+//
+//
+//
+
+//Variable declaration
+rho=9*10^-3; //resistivity(ohm m)
+RH=3.6*10^-4; //hall coefficient(m^3/C)
+e=1.6*10^-19; //charge of electron
+
+//Calculation
+sigma=1/rho;
+rho=1/RH;
+n=rho/e; //density of charge carrier(per m^3)
+mew=sigma*RH; //mobility(m^2/Vs)
+
+//Result
+printf("\n density of charge carrier is %0.5f *10^22 per m^3",n/10^22)
+printf("\n mobility is %0.3f m^2/Vs",mew)
diff --git a/3755/CH8/EX8.11/Ex8_11.sce b/3755/CH8/EX8.11/Ex8_11.sce new file mode 100644 index 000000000..fd0051368 --- /dev/null +++ b/3755/CH8/EX8.11/Ex8_11.sce @@ -0,0 +1,17 @@ +clear
+//
+//
+//
+
+//Variable declaration
+e=1.6*10^-19; //charge of electron
+z=0.3*10^-3; //thickness(m)
+VH=1*10^-3; //hall voltage(V)
+Ix=10*10^-3; //current(A)
+Bz=0.3; //magnetic field(T)
+
+//Calculation
+n=Ix*Bz/(VH*z*e); //charge carrier concentration(m^-3)
+
+//Result
+printf("\n charge carrier concentration is %e m^-3",n)
diff --git a/3755/CH8/EX8.12/Ex8_12.sce b/3755/CH8/EX8.12/Ex8_12.sce new file mode 100644 index 000000000..046ebb3ae --- /dev/null +++ b/3755/CH8/EX8.12/Ex8_12.sce @@ -0,0 +1,17 @@ +clear
+//
+//
+//
+
+//Variable declaration
+rho=0.00912; //resistivity(ohm m)
+RH=3.55*10^-4; //hall coefficient(m^3/C)
+B=0.48; //flux density(Wb/m^2)
+
+//Calculation
+sigma=1/rho;
+theta_H=atan(sigma*B*RH); //hall angle(radian)
+theta_H=theta_H*180/%pi ; //hall angle(degrees)
+
+//Result
+printf("\n hall angle is %0.4f degrees",theta_H)
diff --git a/3755/CH8/EX8.3/Ex8_3.sce b/3755/CH8/EX8.3/Ex8_3.sce new file mode 100644 index 000000000..453da9785 --- /dev/null +++ b/3755/CH8/EX8.3/Ex8_3.sce @@ -0,0 +1,19 @@ +clear
+//
+//
+//
+
+//Variable declaration
+me=9.1*10^-31; //mass of electron(kg)
+kb=1.38*10^-23; //boltzmann constant
+T=300; //temperature(K)
+h=6.62*10^-34; //planck's constant
+Eg=0.7; //band gap(eV)
+e=1.6*10^-19; //charge(c)
+
+//Calculation
+x=2*%pi*me*kb*T/(h^2);
+n=2*(x^(3/2))*exp(-Eg*e/(2*kb*T)); //density of holes and electrons(per m^3)
+
+//Result
+printf("\n density of holes and electrons is %0.3f *10^19 per m^3",n/10^19)
diff --git a/3755/CH8/EX8.4/Ex8_4.sce b/3755/CH8/EX8.4/Ex8_4.sce new file mode 100644 index 000000000..71caa7329 --- /dev/null +++ b/3755/CH8/EX8.4/Ex8_4.sce @@ -0,0 +1,18 @@ +clear
+//
+//
+//
+
+//Variable declaration
+kb=1.38*10^-23; //boltzmann constant
+T=300; //temperature(K)
+m=6;
+Eg=0.7; //band gap(eV)
+
+//Calculation
+x=3*kb*T*log(m)/4;
+EF=(Eg/2)+x; //position of Fermi level(eV)
+
+//Result
+printf("\n position of Fermi level is %0.3f eV",EF)
+printf("\n answer in the book is wrong")
diff --git a/3755/CH8/EX8.5/Ex8_5.sce b/3755/CH8/EX8.5/Ex8_5.sce new file mode 100644 index 000000000..1ab90a493 --- /dev/null +++ b/3755/CH8/EX8.5/Ex8_5.sce @@ -0,0 +1,15 @@ +clear
+//
+//
+//
+
+//Variable declaration
+T1=300; //temperature(K)
+T2=330; //temperature(K)
+E=0.3; //band gap(eV)
+
+//Calculation
+Ec_Ef=T2*E/T1; //position of Fermi level(eV)
+
+//Result
+printf("\n position of Fermi level is %0.3f eV",Ec_Ef)
diff --git a/3755/CH8/EX8.6/Ex8_6.sce b/3755/CH8/EX8.6/Ex8_6.sce new file mode 100644 index 000000000..ba5b1a176 --- /dev/null +++ b/3755/CH8/EX8.6/Ex8_6.sce @@ -0,0 +1,14 @@ +clear
+//
+//
+//
+
+//Variable declaration
+n=2.05*10^22; //charge carrier density
+e=1.602*10^-19; //charge of electron
+
+//Calculation
+RH=1/(n*e); //hall coefficient(m^3/C)
+
+//Result
+printf("\n hall coefficient is %0.3f *10^-4 m^3/C",RH*10^4)
diff --git a/3755/CH8/EX8.7/Ex8_7.sce b/3755/CH8/EX8.7/Ex8_7.sce new file mode 100644 index 000000000..9a53aa160 --- /dev/null +++ b/3755/CH8/EX8.7/Ex8_7.sce @@ -0,0 +1,14 @@ +clear
+//
+//
+//
+
+//Variable declaration
+n=5*10^28; //charge carrier density
+e=1.6*10^-19; //charge of electron
+
+//Calculation
+RH=-1/(n*e); //hall coefficient(m^3/C)
+
+//Result
+printf("\n hall coefficient is %0.3f *10^-9 m^3/C",RH*10^9)
diff --git a/3755/CH8/EX8.8/Ex8_8.sce b/3755/CH8/EX8.8/Ex8_8.sce new file mode 100644 index 000000000..926bc10a1 --- /dev/null +++ b/3755/CH8/EX8.8/Ex8_8.sce @@ -0,0 +1,15 @@ +clear
+//
+//
+//
+
+//Variable declaration
+a=4.28*10^-10; //side(m)
+e=1.6*10^-19; //charge of electron
+
+//Calculation
+n=2/(a^3);
+RH=-1/(n*e); //hall coefficient(m^3/C)
+
+//Result
+printf("\n hall coefficient is %0.3f *10^-9 m^3/C",RH*10^9)
diff --git a/3755/CH8/EX8.9/Ex8_9.sce b/3755/CH8/EX8.9/Ex8_9.sce new file mode 100644 index 000000000..d159cf18b --- /dev/null +++ b/3755/CH8/EX8.9/Ex8_9.sce @@ -0,0 +1,15 @@ +clear
+//
+//
+//
+
+//Variable declaration
+rho=9*10^-3; //resistivity(ohm m)
+mew=0.03; //mobility(m^2/Vs)
+
+//Calculation
+sigma=1/rho;
+RH=mew/sigma; //hall coefficient(m^3/C)
+
+//Result
+printf("\n hall coefficient is %0.3f *10^-4 m^3/C",RH*10^4)
|