diff options
Diffstat (limited to '3754/CH10')
| -rw-r--r-- | 3754/CH10/EX10.1/10_1.sce | 17 | ||||
| -rw-r--r-- | 3754/CH10/EX10.10/10_10.sce | 16 | ||||
| -rw-r--r-- | 3754/CH10/EX10.11/10_11.sce | 16 | ||||
| -rw-r--r-- | 3754/CH10/EX10.12/10_12.sce | 20 | ||||
| -rw-r--r-- | 3754/CH10/EX10.13/10_13.sce | 25 | ||||
| -rw-r--r-- | 3754/CH10/EX10.15/10_15.sce | 22 | ||||
| -rw-r--r-- | 3754/CH10/EX10.16/10_16.sce | 22 | ||||
| -rw-r--r-- | 3754/CH10/EX10.17/10_17.sce | 18 | ||||
| -rw-r--r-- | 3754/CH10/EX10.18/10_18.sce | 15 | ||||
| -rw-r--r-- | 3754/CH10/EX10.19/10_19.sce | 17 | ||||
| -rw-r--r-- | 3754/CH10/EX10.20/10_20.sce | 16 | ||||
| -rw-r--r-- | 3754/CH10/EX10.21/10_21.sce | 17 | ||||
| -rw-r--r-- | 3754/CH10/EX10.22/10_22.sce | 15 | ||||
| -rw-r--r-- | 3754/CH10/EX10.3/10_3.sce | 18 | ||||
| -rw-r--r-- | 3754/CH10/EX10.5/10_5.sce | 18 | ||||
| -rw-r--r-- | 3754/CH10/EX10.6/10_6.sce | 24 | ||||
| -rw-r--r-- | 3754/CH10/EX10.7/10_7.sce | 17 | ||||
| -rw-r--r-- | 3754/CH10/EX10.8/10_8.sce | 18 | ||||
| -rw-r--r-- | 3754/CH10/EX10.9/10_9.sce | 17 |
19 files changed, 348 insertions, 0 deletions
diff --git a/3754/CH10/EX10.1/10_1.sce b/3754/CH10/EX10.1/10_1.sce new file mode 100644 index 000000000..80efb21ef --- /dev/null +++ b/3754/CH10/EX10.1/10_1.sce @@ -0,0 +1,17 @@ +clear//
+
+//Variables
+
+R = 1000.0 //Resistance (in ohm)
+sig = 5.8 * 10**7 //Conductivity in (Siemen per meter)
+d = 10**-3 //diameter (in meter)
+E = 10 * 10**-3 //Eletric field (in Volt per meter)
+
+//Calculation
+
+l = R *sig * %pi * d**2 /4 //length (in meter)
+J = sig * E //Current density (in Ampere per metersquare)
+
+//Result
+
+printf("\n Length of wire is %0.2f km.\nCurrent desity is %0.3f A/(m*m).",l/1000,J)
diff --git a/3754/CH10/EX10.10/10_10.sce b/3754/CH10/EX10.10/10_10.sce new file mode 100644 index 000000000..d68043779 --- /dev/null +++ b/3754/CH10/EX10.10/10_10.sce @@ -0,0 +1,16 @@ +clear//
+
+//Variables
+
+ND = 2 * 10**14 //Donor atom concentration (in atoms per cubic-centimeter)
+NA = 3 * 10**14 //Acceptor atom concentration (in atoms per cubic-centimeter)
+ni = 2.3 * 10**19 //intrinsic concentration (in atoms per cubic-centimeter)
+
+//Calculation
+
+n = ni**2 / NA //concentration of electrons (in electrons per cubic-centimeter)
+p = ni**2 / ND //concentration of holes (in holes per cubic-centimeter)
+
+//Result
+
+printf("\n Electron concentration is %0.3f electrons/cm**3.\nHole concentration is %0.3f holes/cm**3.",n,p)
diff --git a/3754/CH10/EX10.11/10_11.sce b/3754/CH10/EX10.11/10_11.sce new file mode 100644 index 000000000..fbb35dcc6 --- /dev/null +++ b/3754/CH10/EX10.11/10_11.sce @@ -0,0 +1,16 @@ +clear//
+
+//Variables
+
+ND = 5 * 10**8 //Donor atom concentration (in atoms per cubic-centimeter)
+NA = 6 * 10**16 //Acceptor atom concentration (in atoms per cubic-centimeter)
+ni = 1.5 * 10**10 //intrinsic concentration (in atoms per cubic-centimeter)
+
+//Calculation
+
+n = ni**2/NA //number of electrons (in per cubic-centimeter)
+p = ni**2/ND //number of holes (in per cubic-centimeter)
+
+//Result
+
+printf("\n Density of electrons is %0.3f cm**-3.\nDensity of holes is %0.3f cm**-3.",n,p)
diff --git a/3754/CH10/EX10.12/10_12.sce b/3754/CH10/EX10.12/10_12.sce new file mode 100644 index 000000000..52ef0e5f1 --- /dev/null +++ b/3754/CH10/EX10.12/10_12.sce @@ -0,0 +1,20 @@ +clear//
+
+//Variables
+
+d = 0.001 //diameter (in meter)
+ND = 10**20 //Number of phosphorus ions (in per cubic-meter)
+R = 1000 //Resistance (in ohm)
+un = 0.1 //mobility (in meter-square per volt-second)
+q = 1.6 * 10**-19 //charge on electron (in Coulomb)
+
+//Calculation
+
+n = ND //Number of free electron (in per cubic-meter)
+sig = q*n*un //conductivity (in Siemen per meter)
+A = %pi * d**2 / 4 //Area of cross section (in meter-square)
+l = R * sig * A //length (in meter)
+
+//Result
+
+printf("\n Length of the silicon would be %0.3f mm.",l*1000)
diff --git a/3754/CH10/EX10.13/10_13.sce b/3754/CH10/EX10.13/10_13.sce new file mode 100644 index 000000000..82fe26224 --- /dev/null +++ b/3754/CH10/EX10.13/10_13.sce @@ -0,0 +1,25 @@ +clear//
+
+//Variables
+
+q = 1.6 * 10**-19 //Charge on electron (in Coulomb)
+sig = 100.0 //Conductivity of Ge (in per ohm-centimeter)
+sig1 = 0.1 //Conductivity of Si (in per ohm-centimeter)
+ni = 1.5 * 10**10 //intrinsic conductivity for Si (in per cubic-centimeter)
+un = 3800.0 //mobility of electrons for Ge (in square-centimetermeter per volt-second)
+up = 1800.0 //mobility of holes for Ge (in square-centimeter per volt-second)
+un1 = 1300.0 //mobility of electrons for Si (in square-centimetermeter per volt-second)
+up1 = 500.0 //mobility of holes for Si (in square-centimeter per volt-second)
+ni1 = 2.5 * 10**13 //intrinsic concentration for Ge (in per cubic-centimeter)
+
+//Calculation
+
+p = sig / (q * up) //Concentration of p-type germanium (in cubic-centimeter)
+n = ni1**2 / p //Concentration of electrons in germanium (in cubic-centimeter)
+n1 = sig1 / (q * un1) //Concentration of N-type silicon (in cubic-centimeter)
+p1 = ni**2 / n1 //Concentration of holes in silicon (in cubic-centimere)
+
+//Result
+
+printf("\n For p-type germanium, hole concentration is %0.3f /cm**3.\nFor p-type germanium, electron concentration is %0.3f /cm**3.",p,n)
+printf("\n For n-type silicon, hole concentration is %0.3f /cm**3.\nFor n-type silicon, electron concentration is %0.3f /cm**3.",p1,n1)
diff --git a/3754/CH10/EX10.15/10_15.sce b/3754/CH10/EX10.15/10_15.sce new file mode 100644 index 000000000..b51377a6e --- /dev/null +++ b/3754/CH10/EX10.15/10_15.sce @@ -0,0 +1,22 @@ +clear//
+
+//Variables
+
+un = 1350 //mobility of electrons (in centimeter-square per volt-second)
+up = 480 //mobility of holes (in centimeter-square per volt-second)
+ni = 1.52 * 10**10 //intrinsic concentration (in per cubic-centimeter)
+Nsi = 4.96 * 10**22 //concentration of silicon (in per cubic-centimeter)
+q = 1.6 * 10**-19 //charge on electron (in Coulomb)
+
+//Calculation
+
+sigi = q * ni * (un + up) //conductivity of intrinsic silicon (in per ohm-centimeter)
+ND = Nsi/(50 * 10**6) //Number of donor atoms (per cubic-centimeter)
+n = ND //NUmber of free electrons (in per cubic-centimeter)
+p = ni**2/n //number of holes (in per cubic-centimeter)
+sig = q * n * un //conductivity of doped silicon (in per ohm-centimeter)
+p = 1/sig //resistivity (in ohm-centimeter)
+
+//Result
+
+printf("\n Resistivity of doped silicon is %0.2f ohm-cm.",p)
diff --git a/3754/CH10/EX10.16/10_16.sce b/3754/CH10/EX10.16/10_16.sce new file mode 100644 index 000000000..cc88e3309 --- /dev/null +++ b/3754/CH10/EX10.16/10_16.sce @@ -0,0 +1,22 @@ +clear//Variables
+
+up = 0.048 //hole mobility (in meter-square per volt-second)
+un = 0.135 //electron mobility (in meter-square per volt-second)
+q = 1.602 * 10**-19 //charge on electron (in Coulomb)
+Nsi1 = 5 * 10**28 //concentration of intrinsic silicon (in atoms per cubic-meter)
+ni = 1.5 * 10**16 //number of electron-hole pairs (per cubic-meter)
+alpha = 0.05 //temperature coefficient (in per degree Celsius)
+dT = 14 //change in temperature (in degree celsius)
+
+//Calculation
+
+sig1 = q * ni * (un + up) //conductivity of intrinsic silicon (in per ohm-meter)
+NA = Nsi1/10**7 //Number of indium atoms (in per cubic-meter)
+p = NA //Number of holes (in per cubic meter)
+n = ni**2/p //Number of free electrons (in per cubic-meter)
+sig2 = q * p * up //Conductivity of doped silicon (in per ohm-meter)
+sig34 = sig1*(1 + alpha * dT) //Conductivity at 34 degree Celsius (in per ohm-meter)
+
+//Result
+
+printf("\n Conductivity of intrinsic silicon is %0.5f per ohm-meter.\nConductivity of doped Silicon is %0.2f per ohm-meter.\nConductivity of silicon at 34 degree Celsius is %0.5f per ohm-meter.",sig1,sig2,sig34)
diff --git a/3754/CH10/EX10.17/10_17.sce b/3754/CH10/EX10.17/10_17.sce new file mode 100644 index 000000000..efcb67aea --- /dev/null +++ b/3754/CH10/EX10.17/10_17.sce @@ -0,0 +1,18 @@ +clear//
+
+//Variables
+
+un = 3600.0 * 10**-4 //mobility of electrons (in meter-square per volt-second)
+up = 1700.0 * 10**-4 //mobility of holes (in meter-square per volt-second)
+k = 1.38 * 10**23 //Boltzmann constant
+T = 300.0 //Temperature (in kelvin)
+
+//Calculation
+
+VT = T/11600 //Voltage (in volts)
+Dp = up * VT //Coefficient of holes (in meter-square per second)
+Dn = un * VT //Coefficient of electrons (in meter-square per second)
+
+//Result
+
+printf("\n Coefficient of holes is %0.6f m**2/s.\nCoefficient of electrons is %0.4f m**2/s.",Dp,Dn)
diff --git a/3754/CH10/EX10.18/10_18.sce b/3754/CH10/EX10.18/10_18.sce new file mode 100644 index 000000000..c20bde19f --- /dev/null +++ b/3754/CH10/EX10.18/10_18.sce @@ -0,0 +1,15 @@ +clear//
+
+//Variables
+
+RH = 160 //Hall coeffficient (in cubic-centimeter per Coulomb)
+p = 0.16 //Resistivity (in ohm-centimeter)
+
+//Calculation
+
+sig = 1/p //Conductivity (in per ohm-centimeter)
+un = sig * RH //Electron mobility (in cmentimeter-square per volt-second)
+
+//Result
+
+printf("\n Electron mobility is %0.3f cm**2/V-s.",un)
diff --git a/3754/CH10/EX10.19/10_19.sce b/3754/CH10/EX10.19/10_19.sce new file mode 100644 index 000000000..cda49cc55 --- /dev/null +++ b/3754/CH10/EX10.19/10_19.sce @@ -0,0 +1,17 @@ +clear//
+
+//Variables
+
+I = 50 //Current (in Ampere)
+B = 1.2 //Magnetic field (in Weber per meter-square)
+t = 0.5 * 10**-3 //thickness (in meter)
+VH = 100 //Hall coltage (in volts)
+q = 1.6 * 10**-19 //Charge on electron (in Coulomb)
+
+//Calculation
+
+n = B * I / (VH * q * t) //number of conduction electrons (in per cubic-meter)
+
+//Result
+
+printf("\n Number of conduction electrons is %0.3f m**-3.",n)
diff --git a/3754/CH10/EX10.20/10_20.sce b/3754/CH10/EX10.20/10_20.sce new file mode 100644 index 000000000..c03415d9c --- /dev/null +++ b/3754/CH10/EX10.20/10_20.sce @@ -0,0 +1,16 @@ +clear//
+
+//Variables
+
+p = 20 * 10**-2 //Resistivity (in ohm-meter)
+u = 100 * 10**-4 //mobility (in meter-square per volt-second)
+q = 1.6 * 10**-19 //charge on electron (in Coulomb)
+
+//Calculation
+
+sig = 1/p //Conductivity (in per ohm-meter)
+n = sig / (q * u) //number of electron carriers (in per cubic-meter)
+
+//Result
+
+printf("\n Number of electron carriers is %0.1f m**-3.",n)
diff --git a/3754/CH10/EX10.21/10_21.sce b/3754/CH10/EX10.21/10_21.sce new file mode 100644 index 000000000..aae843aa2 --- /dev/null +++ b/3754/CH10/EX10.21/10_21.sce @@ -0,0 +1,17 @@ +clear//
+
+//Variables
+
+RH = 3.66 *10**-4 //Hall coefficient (in cubic-meter per Coulomb)
+p = 8.93 * 10 **-3 //Resistivity (in ohm-meter)
+q = 1.6 * 10**-19 //Charge on electron (in Coulomb)
+
+//Calculation
+
+sig = 1/p //Conductivity (in per ohm-meter)
+u = sig * RH //mobility (in meter-square per volt-second)
+n = 1 / (RH * q) //Density of charge carriers (in per cubic-meter)
+
+//Result
+
+printf("\n Mobility of charge carriers is %0.3f m**2/V-s.\nDensity of charge carriers is %0.3f m**-3.",u,n)
diff --git a/3754/CH10/EX10.22/10_22.sce b/3754/CH10/EX10.22/10_22.sce new file mode 100644 index 000000000..8887d9828 --- /dev/null +++ b/3754/CH10/EX10.22/10_22.sce @@ -0,0 +1,15 @@ +clear//
+
+//Variables
+
+p = 9 * 10**-3 //Resistivity (in ohm-meter)
+up = 0.03 //Mobility (in meter-square per volt-second)
+
+//Calculation
+
+sig = 1/p //Conductivity (in per ohm-meter)
+RH = up / sig //Hall coefficient (in cubic-meter per Coulomb)
+
+//Result
+
+printf("\n Value of Hall-coefficient is %0.3f m**3/C.",RH)
diff --git a/3754/CH10/EX10.3/10_3.sce b/3754/CH10/EX10.3/10_3.sce new file mode 100644 index 000000000..57dde664e --- /dev/null +++ b/3754/CH10/EX10.3/10_3.sce @@ -0,0 +1,18 @@ +clear//
+
+//Variables
+
+n = 5.8 * 10**28 //number of free electrons (in per cubic-meter)
+p = 1.54 * 10**-8 //resistivity (in ohm-meter)
+q = 1.6 * 10**-19 //charge (in Coulomb)
+m = 9.1 * 10**-31 //mass of electron (in kg)
+
+//Calculation
+
+sig = 1/p //conductivity (in siemen per meter)
+mu = sig /(q * n) //mobility (in meter-square/volt-second)
+t = mu * m / q //time (in second)
+
+//Result
+
+printf("\n Mobility of electrons is %0.6f m**2/V-s.\nRelaxation time is %0.6f ps.",mu,t*10**12)
diff --git a/3754/CH10/EX10.5/10_5.sce b/3754/CH10/EX10.5/10_5.sce new file mode 100644 index 000000000..b282a45e0 --- /dev/null +++ b/3754/CH10/EX10.5/10_5.sce @@ -0,0 +1,18 @@ +clear//
+
+//Variables
+
+ni = 1.41 * 10**16 //intrinsic concentration (in per cubic-metre)
+un = 0.145 //mobility of electrons in germanium (in metre-square/volt-second)
+up = 0.05 //mobility of holes in germanium (in metre-square/volt-second)
+q = 1.6 * 10**-19 //charge of electron (in Coulomb)
+
+//Calculation
+
+sig = q * ni * (un + up) //Conductivity of germanium (in siemen per metre)
+
+//Result
+
+printf("\n Intrinsic conductivity of silicon is %0.3f S/m.",sig)
+printf("\n Contribution by electron is %0.3f S/m.",q*ni*un)
+printf("\n Contribution by electron is %0.3f S/m.",q*ni*up)
diff --git a/3754/CH10/EX10.6/10_6.sce b/3754/CH10/EX10.6/10_6.sce new file mode 100644 index 000000000..c97cef0de --- /dev/null +++ b/3754/CH10/EX10.6/10_6.sce @@ -0,0 +1,24 @@ +clear//
+
+//Variables
+
+l = 0.2 * 10**-3 //length (in meter)
+A = 0.04 * 10**-6 //Area of cross section (in square-meter)
+V = 1 //Voltage (in volts)
+I = 8 * 10**-3 //current (in Ampere)
+un = 0.13 //mobility of electron (in m**2 per volt-second)
+q = 1.6 * 10**-19 //charge on electron (in Coulomb)
+
+//Calculation
+
+
+R = V/I //Resistance (in ohm)
+p = R * A/l //Resistivity (in ohm-meter)
+sig = 1/p //Conductivity (in siemen per meter)
+n = sig / (q * un) //concentration (in per cubic-meter)
+J = I/A //current density (in Ampere per square-meter)
+v = J/(n*q)
+
+//Result
+
+printf("\n Concentration of free electrons is %e m**-3.\nDrift velocity is %0.3f m/s.",n,v)
diff --git a/3754/CH10/EX10.7/10_7.sce b/3754/CH10/EX10.7/10_7.sce new file mode 100644 index 000000000..50a9ffb1f --- /dev/null +++ b/3754/CH10/EX10.7/10_7.sce @@ -0,0 +1,17 @@ +clear//
+
+//Variables
+
+p = 0.47 //Resistivity (in ohm-meter)
+q = 1.6 * 10**-19 //charge on electron (in Coulomb)
+un = 0.39 //mobility of electron in germanium (in m**2 per volt-second)
+up = 0.19 //mobility of hole in germanium (in m**2 per volt-second)
+
+//Calculation
+
+sig = 1/p //Conductivity (in siemen per meter)
+ni = sig / (q *(un +up)) //intrinsic concentration (in per cubic-meter)
+
+//Result
+
+printf("\n Intrinsic concentration is %0.3f m**-3.",ni)
diff --git a/3754/CH10/EX10.8/10_8.sce b/3754/CH10/EX10.8/10_8.sce new file mode 100644 index 000000000..9f7c8263d --- /dev/null +++ b/3754/CH10/EX10.8/10_8.sce @@ -0,0 +1,18 @@ +clear//
+
+//Variables
+
+ND = 10**21 //Donor concentration (in per cubic-meter)
+NA = 5 * 10**20 //Acceptor concentration (in per cubic-meter)
+un = 0.18 //mobility of electron in silicon (in m**2 per volt-second)
+q = 1.6 * 10**-19 //charge on electron (in Coulomb)
+
+
+//Calculation
+
+n = ND -NA //net donor density (in per cubic-meter)
+sig = n * q * un //Conductivity (in Siemen per meter)
+
+//Result
+
+printf("\n Conductivity of silicon is %0.3f (ohm-meter)**-1." ,sig)
diff --git a/3754/CH10/EX10.9/10_9.sce b/3754/CH10/EX10.9/10_9.sce new file mode 100644 index 000000000..c1a5e7648 --- /dev/null +++ b/3754/CH10/EX10.9/10_9.sce @@ -0,0 +1,17 @@ +clear//
+
+//Variables
+
+p = 100.0 //resistivity (in ohm-meter)
+q = 1.6 * 10**-19 //Charge on a electron (in Coulomb)
+un = 0.36 //donor concentration (in per cubic-meter)
+
+//Calculation
+
+sig = 1/p //conductivity (in siemen per meter)
+n = sig /(q * un) //intrinsic concentration (in per cubic-meter)
+ND = n //Donor concentration (in per cubic-meter)
+
+//Result
+
+printf("\n Donor concentration is %0.3f m**-3.",ND)
|