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clear//Variables
up = 0.048 //hole mobility (in meter-square per volt-second)
un = 0.135 //electron mobility (in meter-square per volt-second)
q = 1.602 * 10**-19 //charge on electron (in Coulomb)
Nsi1 = 5 * 10**28 //concentration of intrinsic silicon (in atoms per cubic-meter)
ni = 1.5 * 10**16 //number of electron-hole pairs (per cubic-meter)
alpha = 0.05 //temperature coefficient (in per degree Celsius)
dT = 14 //change in temperature (in degree celsius)
//Calculation
sig1 = q * ni * (un + up) //conductivity of intrinsic silicon (in per ohm-meter)
NA = Nsi1/10**7 //Number of indium atoms (in per cubic-meter)
p = NA //Number of holes (in per cubic meter)
n = ni**2/p //Number of free electrons (in per cubic-meter)
sig2 = q * p * up //Conductivity of doped silicon (in per ohm-meter)
sig34 = sig1*(1 + alpha * dT) //Conductivity at 34 degree Celsius (in per ohm-meter)
//Result
printf("\n Conductivity of intrinsic silicon is %0.5f per ohm-meter.\nConductivity of doped Silicon is %0.2f per ohm-meter.\nConductivity of silicon at 34 degree Celsius is %0.5f per ohm-meter.",sig1,sig2,sig34)
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