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diff --git a/3740/CH7/EX7.1/Ex7_1.jpg b/3740/CH7/EX7.1/Ex7_1.jpg
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diff --git a/3740/CH7/EX7.1/Ex7_1.sce b/3740/CH7/EX7.1/Ex7_1.sce
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+//Optoelectronics - An Introduction, 2nd Edition by J. Wilson and J.F.B. Hawkes
+//Example 7.1
+//OS=Windows XP sp3
+//Scilab version 5.5.2
+clc;
+clear;
+
+//given
+D=1e9;//Specific detectivity of detector in  m Hz^(1/2) W^(-1)
+Lambda=2e-6;//Wavelength in m
+A=25e-6//Detector area in m^2
+Deltaf=10e3;//Detection bandwidth in Hz
+
+NEP=sqrt(A*Deltaf)/D;//Detector sensitivity in W
+mprintf("\n NEP = %.1e W",NEP);
diff --git a/3740/CH7/EX7.2/Ex7_2.jpg b/3740/CH7/EX7.2/Ex7_2.jpg
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diff --git a/3740/CH7/EX7.2/Ex7_2.sce b/3740/CH7/EX7.2/Ex7_2.sce
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+//Optoelectronics - An Introduction, 2nd Edition by J. Wilson and J.F.B. Hawkes
+//Example 7.2
+//OS=Windows XP sp3
+//Scilab version 5.5.2
+clc;
+clear;
+
+//given
+eta=0.5;//Dimensionless Quantum efficiency of photocathode
+e=1.6e-19;//Electronic charge in C
+Plambda=1e-6;//Radiation power incident on the photodiode in W
+Lambda0=500e-9;//Wavelength of incident light in m
+h=6.6e-34;//Planck's constant in SI Units
+c=3e8;//Speed of light in vacuum in m/s
+
+ilambda=eta*e*Plambda*Lambda0/(h*c);//Corresponding current generated in A
+mprintf("\n ilambda = %.1e A",ilambda);
diff --git a/3740/CH7/EX7.3/Ex7_3.jpg b/3740/CH7/EX7.3/Ex7_3.jpg
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index 000000000..e67c3c393
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diff --git a/3740/CH7/EX7.3/Ex7_3.sce b/3740/CH7/EX7.3/Ex7_3.sce
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index 000000000..41ec9c3a7
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+//Optoelectronics - An Introduction, 2nd Edition by J. Wilson and J.F.B. Hawkes
+//Example 7.3
+//OS=Windows XP sp3
+//Scilab version 5.5.2
+clc;
+clear;
+
+//given
+A=1000e-6;//Cathode area in m^2
+Phi=1.25;//Work function of the metal in eV
+kT_by_e=0.025;//constant term =product of Boltzmann constant with Ambient temperature divided by charge of an electron in SI Units
+a=1.2e6;//Constant value for pure metals in A m^-2 K^-2
+T=300;//Temperature in K 
+e=1.6e-19;//Electronic charge in C
+Lambda=0.5e-6;//wavelength in m
+eta=0.25;//Dimensionless Quantum efficiency
+h=6.6e-34;//Planck's constant in SI Units
+c=3e8;//Speed of light in air in m/s
+Deltaf=1;//Bandwidth in Hz
+
+iT=a*A*(T^2)*exp(-Phi/kT_by_e);//Thermionic emission current in A
+mprintf("\n iT = %.1e A",iT);//The answer provided in the textbook varies due to roundingoff 
+
+Rlambda=eta*e*Lambda/(h*c);//Responsivity of the photomultiplier in A W^-1
+mprintf("\n Rlambda = %.1f A/W",Rlambda);
+
+Wmin=sqrt(2*iT*e*Deltaf)/Rlambda;//Minimum detectable signal power in presence of dark current iT in W
+mprintf("\n Wmin = %.1e W",Wmin);//The answer provided in the textbook varies due to roundingoff 
diff --git a/3740/CH7/EX7.4/Ex7_4.jpg b/3740/CH7/EX7.4/Ex7_4.jpg
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index 000000000..26e6570a7
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diff --git a/3740/CH7/EX7.4/Ex7_4.sce b/3740/CH7/EX7.4/Ex7_4.sce
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index 000000000..d037387d8
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+//Optoelectronics - An Introduction, 2nd Edition by J. Wilson and J.F.B. Hawkes
+//Example 7.4
+//OS=Windows XP sp3
+//Scilab version 5.5.2
+clc;
+clear;
+
+//given
+k=1.38e-23;//Boltzmann constant in SI Units
+T=300;//Absolute temperature in K
+R=1e3;//Load resistance in Ohms
+Deltaf=1e3;//Bandwidth of the photo multiplier in Hz
+e=1.6e-19;//Electronic charge in C
+iT=1e-14;//Dark current in A
+
+
+DeltaVj=sqrt(4*k*T*R*Deltaf);
+mprintf("\n DeltaVj = %.1e V",DeltaVj);
+//The answer provided in the textbook is wrong
+
+Deltais=sqrt(2*iT*e*Deltaf);//Corresponding magnitude of rms current fluctuations in A
+mprintf("\n Deltais = %.1e A",Deltais);
+
+//Let the photomultiplier gain be G
+G=1e7;//Given
+//Let the shot noise voltage signal across R be DeltaVj2
+DeltaVj2=Deltais*G*R;
+mprintf("\n DeltaVj2 = %.1e V",DeltaVj2);
diff --git a/3740/CH7/EX7.5/Ex7_5.jpg b/3740/CH7/EX7.5/Ex7_5.jpg
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index 000000000..6a0dcd4b6
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diff --git a/3740/CH7/EX7.5/Ex7_5.sce b/3740/CH7/EX7.5/Ex7_5.sce
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index 000000000..aa5aa3a9f
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+//Optoelectronics - An Introduction, 2nd Edition by J. Wilson and J.F.B. Hawkes
+//Example 7.5
+//OS=Windows XP sp3
+//Scilab version 5.5.2
+clc;
+clear;
+
+//given
+h=6.6e-34;//Planck's constant in SI Units
+e=1.6e-19;//Electronic charge in C
+m=9.1e-31;//Rest mass of electron in kg
+me=0.068*m;//Relative mass of electron in conduction band
+n1=1;//Initial state of electron
+n2=2;//Final state of electron
+Lz=10e-9;//Width of the quantum well in m
+
+DeltaE=(h^2)/(8*me)*((n2/Lz)^2-(n1/Lz)^2);//Energy difference between the two states in J
+mprintf("\n DeltaE = %.3f eV",DeltaE/e);//Dividing by 'e' to convert to eV
diff --git a/3740/CH7/EX7.6/Ex7_6.jpg b/3740/CH7/EX7.6/Ex7_6.jpg
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index 000000000..118ce0d0c
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+++ b/3740/CH7/EX7.6/Ex7_6.jpg
diff --git a/3740/CH7/EX7.6/Ex7_6.sce b/3740/CH7/EX7.6/Ex7_6.sce
new file mode 100644
index 000000000..5d4538df3
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+++ b/3740/CH7/EX7.6/Ex7_6.sce
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+//Optoelectronics - An Introduction, 2nd Edition by J. Wilson and J.F.B. Hawkes
+//Example 7.6
+//OS=Windows XP sp3
+//Scilab version 5.5.2
+clc;
+clear;
+
+//given
+e=1.6e-19;//Electronic charge in C
+Epsilonr=11.7;//Relative permittivity of medium
+Epsilon0=8.85e-12;//Permittivity of free space in SI Units
+Nd=5e21;//Doping level of the diode in m^-3
+V=100;//Reverse bias voltage in V
+
+xn=sqrt(2*Epsilon0*Epsilonr*V/(e*Nd));//Depletion region thickness in m
+mprintf("\n xn = %.1f um",xn/1e-6);//Dividing by10^(-6) to convert to um
diff --git a/3740/CH7/EX7.7/Ex7_7.jpg b/3740/CH7/EX7.7/Ex7_7.jpg
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index 000000000..133581ea9
--- /dev/null
+++ b/3740/CH7/EX7.7/Ex7_7.jpg
diff --git a/3740/CH7/EX7.7/Ex7_7.sce b/3740/CH7/EX7.7/Ex7_7.sce
new file mode 100644
index 000000000..fb172a980
--- /dev/null
+++ b/3740/CH7/EX7.7/Ex7_7.sce
@@ -0,0 +1,27 @@
+//Optoelectronics - An Introduction, 2nd Edition by J. Wilson and J.F.B. Hawkes
+//Example 7.7
+//OS=Windows XP sp3
+//Scilab version 5.5.2
+clc;
+clear;
+
+//given
+A=100e-6*100e-6;//Junction area of the photodiode in m^2
+Epsilonr=12;//Relative permittivity of InGaAs
+Epsilon0=8.84e-12;//Permittivity of free space in SI Units
+w=2e-6;//Thickness of the i region
+Rl=50;//Load resistance in Ohms
+vsat=1e5;//Saturation velocity of electrons in InGaAs
+
+Tdrift=w/vsat;//Transit time of electrons through the depletion region in s
+mprintf("\n Tdrift = %.1e s",Tdrift);
+
+Cj=A*Epsilon0*Epsilonr/w;//Diode capacitance in F
+mprintf("\n Cj = %.1e F",Cj);
+
+Trc=Rl*Cj;//Response time associated with the detector RC network in s
+mprintf("\n Trc = %.1e s",Trc);//The answers vary due to round off error
+
+T=sqrt((Tdrift)^2+(Trc)^2);//Total time response in s
+mprintf("\n T = %.1e s",T);
+//The answers vary due to round off error
diff --git a/3740/CH7/EX7.8/Ex7_8.jpg b/3740/CH7/EX7.8/Ex7_8.jpg
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+++ b/3740/CH7/EX7.8/Ex7_8.jpg
diff --git a/3740/CH7/EX7.8/Ex7_8.sce b/3740/CH7/EX7.8/Ex7_8.sce
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index 000000000..659deb1ad
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+//Optoelectronics - An Introduction, 2nd Edition by J. Wilson and J.F.B. Hawkes
+//Example 7.8
+//OS=Windows XP sp3
+//Scilab version 5.5.2
+clc;
+clear;
+
+//given
+d=5e-6;//Thickness of Si layer in m
+D=3.4e-3;//Minority carrier diffusion coefficient in m^2 s^-1
+
+Tdiff=(d^2)/(2*D);//Diffusion time of carriers in s
+mprintf("\n Tdiff = %.1e s",Tdiff);