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diff --git a/3740/CH2/EX2.1/Ex2_1.jpg b/3740/CH2/EX2.1/Ex2_1.jpg
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diff --git a/3740/CH2/EX2.1/Ex2_1.sce b/3740/CH2/EX2.1/Ex2_1.sce
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+//Optoelectronics - An Introduction, 2nd Edition by J. Wilson and J.F.B. Hawkes
+//Example 2.1
+//OS=Windows XP sp3
+//Scilab version 5.5.2
+clc;
+clear;
+
+//given - Case(1)
+NA=6e26;//Avagadro's number
+rho=8.93e3;//density of copper in SI Units
+A=63.54;//Atomic mass number of Cu
+e=1.6e-19;//charge of electrons in C
+m=9.1e-31;//rest mass of electrons in kg
+T=2.6e-14;//mean free time between collisions in s
+
+n=NA*rho/A;//number of atoms per unit volume in m^(-3)
+mprintf("n = %.1e m^(-3)",n);
+SigmaCu=n*(e^2)*T/m;//electrical conductivity of Cu in SI Units
+mprintf("\n Sigma of Cu = %.1e (Ohm m)^(-1)",SigmaCu);//The answers vary due to round off error
+
+//given - Case(2)
+ni=1.6e16;//number of holes or electrons per unit volume of intrinsic silicon in m^(-3)
+e=1.6e-19;//charge of electrons in C
+Muc=0.135;//electron mobility in SI Units
+Mun=0.048;//hole mobility in SI Units
+
+SigmaSi=ni*e*(Muc+Mun);//electrical conductivity of Si in SI Units
+mprintf("\n Sigma of Si = %.1e (Ohm m)^(-1)",SigmaSi);
diff --git a/3740/CH2/EX2.2/Ex2_2.jpg b/3740/CH2/EX2.2/Ex2_2.jpg
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diff --git a/3740/CH2/EX2.2/Ex2_2.sce b/3740/CH2/EX2.2/Ex2_2.sce
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index 000000000..68737ad22
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+//Optoelectronics - An Introduction, 2nd Edition by J. Wilson and J.F.B. Hawkes
+//Example 2.2
+//OS=Windows XP sp3
+//Scilab version 5.5.2
+clc;
+clear;
+
+//given
+//Let the quanity 'me/m' be denoted by M
+M=0.26;
+Epsilonr=11.8//relative permittivity of Si
+
+Ed=13.6*M/(Epsilonr^2);//Energy required to excite the electrons from donor levels to the conduction band in eV
+mprintf("Ed = %.3f eV", Ed);
diff --git a/3740/CH2/EX2.3/Ex2_3.jpg b/3740/CH2/EX2.3/Ex2_3.jpg
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index 000000000..164e70033
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+++ b/3740/CH2/EX2.3/Ex2_3.jpg
diff --git a/3740/CH2/EX2.3/Ex2_3.sce b/3740/CH2/EX2.3/Ex2_3.sce
new file mode 100644
index 000000000..e88ea3518
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+++ b/3740/CH2/EX2.3/Ex2_3.sce
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+//Optoelectronics - An Introduction, 2nd Edition by J. Wilson and J.F.B. Hawkes
+//Example 2.3
+//OS=Windows XP sp3
+//Scilab version 5.5.2
+clc;
+clear;
+
+//given
+m=9.1e-31;//rest mass of electrons in kg
+me=0.55*m;//effective mass of electrons in kg
+h=6.62e-34;//Planck's constant in SI Units
+k=1.38e-23;//Boltzmann's constant in SI Units
+T=300;//temperature of the source in K
+
+Nc=2*(2*%pi*me*k*T/(h^2))^(3/2);//effective density of states in the conduction band
+mprintf("Nc = %.2e m^(-3)",Nc);//The answers vary due to round off error
diff --git a/3740/CH2/EX2.4/Ex2_4.jpg b/3740/CH2/EX2.4/Ex2_4.jpg
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index 000000000..158671cd6
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+++ b/3740/CH2/EX2.4/Ex2_4.jpg
diff --git a/3740/CH2/EX2.4/Ex2_4.sce b/3740/CH2/EX2.4/Ex2_4.sce
new file mode 100644
index 000000000..0d0cd0436
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+//Optoelectronics - An Introduction, 2nd Edition by J. Wilson and J.F.B. Hawkes
+//Example 2.4
+//OS=Windows XP sp3
+//Scilab version 5.5.2
+clc;
+clear;
+
+//given
+n=5e24;//Donor concentration in m^(-3)
+
+//Case (i)
+B=7.2e-16;//Recombination constant for GaAs in m^3 s^(-1)
+Th=1/(B*n);//Hole lifetime in s
+mprintf("Th for GaAs = %.1f ps",Th/1e-12);//Dividing by 10^(-12) to convert to ps
+//The answers vary due to round off error
+
+//Case (i)
+B=1.8e-21;//Recombination constant for Si in m^3 s^(-1)
+Th=1/(B*n);//Hole lifetime in s
+mprintf("\n Th for Si = %.1f us",Th/1e-6);//Dividing by 10^(-6) to convert to us
+//The answers vary due to round off error
diff --git a/3740/CH2/EX2.5/Ex2_5.jpg b/3740/CH2/EX2.5/Ex2_5.jpg
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index 000000000..3551a89db
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diff --git a/3740/CH2/EX2.5/Ex2_5.sce b/3740/CH2/EX2.5/Ex2_5.sce
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index 000000000..777e7182d
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+//Optoelectronics - An Introduction, 2nd Edition by J. Wilson and J.F.B. Hawkes
+//Example 2.5
+//OS=Windows XP sp3
+//Scilab version 5.5.2
+clc;
+clear;
+
+//given
+k=1.38e-23;//Boltzmann's constant in SI Units
+T=290;//room temperature in K
+e=1.6e-19;//charge of electrons in C
+Nd=1e22;//donor impurity level in m(-3)
+Na=1e24;//acceptor impurity level in m(-3)
+ni=2.4e19;//intrinsic electron concentration in m^(-3)
+
+V0=k*T/e*log(Na*Nd/(ni^2));//contact potential difference in V
+mprintf("V0 = %.2f V",V0);
diff --git a/3740/CH2/EX2.6/Ex2_6.jpg b/3740/CH2/EX2.6/Ex2_6.jpg
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index 000000000..4c8615926
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+++ b/3740/CH2/EX2.6/Ex2_6.jpg
diff --git a/3740/CH2/EX2.6/Ex2_6.sce b/3740/CH2/EX2.6/Ex2_6.sce
new file mode 100644
index 000000000..47ee543f0
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+++ b/3740/CH2/EX2.6/Ex2_6.sce
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+//Optoelectronics - An Introduction, 2nd Edition by J. Wilson and J.F.B. Hawkes
+//Example 2.6
+//OS=Windows XP sp3
+//Scilab version 5.5.2
+clc;
+clear;
+
+//given
+V=-4;//reverse bias voltage applied to a Si diode in V
+//The negative sign indicates reverse bias
+Nd=4e21;//donor impurity level in m^(-3) 
+V0=0.8;//potential barrier of the diode in V
+Epsilon0=8.85e-12;//permittivity of free space in SI Units
+Epsilonr=11.8;//relative permittivity of the diode
+A=4e-7;//junction area of the diode in m^2
+e=1.6e-19;//charge of electrons in C
+
+Cj=A/2*(2*e*Epsilon0*Epsilonr*Nd/(V0-V))^(1/2);//junction capacitance of the diode in F
+mprintf("Cj = %.1f pF",Cj/1e-12);//division by 10^(-12) to convert into pF
diff --git a/3740/CH2/EX2.7/Ex2_7.jpg b/3740/CH2/EX2.7/Ex2_7.jpg
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index 000000000..d19028230
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+++ b/3740/CH2/EX2.7/Ex2_7.jpg
diff --git a/3740/CH2/EX2.7/Ex2_7.sce b/3740/CH2/EX2.7/Ex2_7.sce
new file mode 100644
index 000000000..681f7b63c
--- /dev/null
+++ b/3740/CH2/EX2.7/Ex2_7.sce
@@ -0,0 +1,19 @@
+//Optoelectronics - An Introduction, 2nd Edition by J. Wilson and J.F.B. Hawkes
+//Example 2.7
+//OS=Windows XP sp3
+//Scilab version 5.5.2
+clc;
+clear;
+
+//given
+V=-4;//reverse bias voltage applied to a Si diode in V
+//The negative sign indicates reverse bias
+Nd=4e21;//donor impurity level in m^(-3) 
+V0=0.8;//potential barrier of the diode in V
+Epsilon0=8.85e-12;//permittivity of free space in SI Units
+Epsilonr=11.8;//relative permittivity of the diode
+A=4e-7;//junction area of the diode in m^2
+e=1.6e-19;//charge of electrons in C
+
+Cj=A/2*(2*e*Epsilon0*Epsilonr*Nd/(V0-V))^(1/2);//junction capacitance of the diode in F
+mprintf("Cj = %.1f pF",Cj/1e-12);//division by 10^(-12) to convert into pF
diff --git a/3740/CH2/EX2.8/Ex2_8.jpg b/3740/CH2/EX2.8/Ex2_8.jpg
new file mode 100644
index 000000000..6f6e0abe4
--- /dev/null
+++ b/3740/CH2/EX2.8/Ex2_8.jpg
diff --git a/3740/CH2/EX2.8/Ex2_8.sce b/3740/CH2/EX2.8/Ex2_8.sce
new file mode 100644
index 000000000..283dc9cb9
--- /dev/null
+++ b/3740/CH2/EX2.8/Ex2_8.sce
@@ -0,0 +1,16 @@
+//Optoelectronics - An Introduction, 2nd Edition by J. Wilson and J.F.B. Hawkes
+//Example 2.8
+//OS=Windows XP sp3
+//Scilab version 5.5.2
+clc;
+clear;
+
+//given
+Lz=10e-9;//Thickness of a GaAs quantum well in m
+m=9.1e-31;//Rest mass of an electron in kg
+me=0.068*m;//Mass of electrons in conduction band
+mh=0.56*m;//Mass of electrons in valence band
+h=6.62e-34;//Planck's constant in SI Units
+
+DeltaEg=(h^2)/(8*(Lz)^2)*(1/me+1/mh);//Energy gap in the GaAs quantum well
+mprintf("DeltaEg = %.2e J",DeltaEg);