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+clc//
+//
+//
+
+//Variable declaration
+RH=3.66*10^-4; //hall coefficient(m^3/coulomb)
+e=1.6*10^-19;
+Pn=8.93*10^-3; //resistivity(ohm m)
+
+//Calculation
+n=1/(RH*e); //density of charge carriers(per m^3)
+mew_e=RH/Pn; //mobility of charge carriers(m^2/Vs)
+
+//Result
+printf("\n density of charge carriers is %0.3f *10^22 per m^3",n/10^22)
+printf("\n mobility of charge carriers is %0.3f m^2 V-1 s-1",mew_e)