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+clc//
+//
+//
+
+//Variable declaration
+I=30; //current(A)
+B=1.75; //magnetic field(T)
+n=6.55*10^28; //electron concentration(/m^3)
+t=0.35*10^-2; //thickness(m)
+e=1.6*10^-19;
+
+//Calculation
+VH=I*B*10^6/(n*e*t); //hall voltage(micro V)
+
+//Result
+printf("\n hall voltage is %0.3f micro V",VH)