summaryrefslogtreecommitdiff
path: root/3020/CH18
diff options
context:
space:
mode:
Diffstat (limited to '3020/CH18')
-rwxr-xr-x3020/CH18/EX18.1/ex18_1.sce20
-rwxr-xr-x3020/CH18/EX18.10/ex18_10.sce14
-rwxr-xr-x3020/CH18/EX18.11/ex18_11.sce10
-rwxr-xr-x3020/CH18/EX18.12/ex18_12.sce15
-rwxr-xr-x3020/CH18/EX18.13/ex18_13.sce8
-rwxr-xr-x3020/CH18/EX18.14/ex18_14.sce11
-rwxr-xr-x3020/CH18/EX18.15/ex18_17.sce6
-rwxr-xr-x3020/CH18/EX18.16/ex18_16.sce13
-rwxr-xr-x3020/CH18/EX18.17/ex18_17.sce6
-rwxr-xr-x3020/CH18/EX18.18/ex18_18.sce15
-rwxr-xr-x3020/CH18/EX18.19/ex18_19.sce20
-rwxr-xr-x3020/CH18/EX18.2/ex18_2.sce11
-rwxr-xr-x3020/CH18/EX18.20/ex18_20.sce9
-rwxr-xr-x3020/CH18/EX18.21/ex18_21.sce9
-rwxr-xr-x3020/CH18/EX18.22/ex18_22.sce9
-rwxr-xr-x3020/CH18/EX18.23/ex18_23.sce10
-rwxr-xr-x3020/CH18/EX18.3/ex18_3.sce13
-rwxr-xr-x3020/CH18/EX18.4/ex18_4.sce8
-rwxr-xr-x3020/CH18/EX18.5/ex18_5.sce11
-rwxr-xr-x3020/CH18/EX18.6/ex18_6.sce12
-rwxr-xr-x3020/CH18/EX18.7/ex18_7.sce20
-rwxr-xr-x3020/CH18/EX18.8/ex18_8.sce23
-rwxr-xr-x3020/CH18/EX18.9/ex18_9.sce11
23 files changed, 284 insertions, 0 deletions
diff --git a/3020/CH18/EX18.1/ex18_1.sce b/3020/CH18/EX18.1/ex18_1.sce
new file mode 100755
index 000000000..076fe5a2a
--- /dev/null
+++ b/3020/CH18/EX18.1/ex18_1.sce
@@ -0,0 +1,20 @@
+clc;
+clear all;
+T=300;//temperature in kelvin
+ue=0.4;//electon mobility in m^2/V*s
+uh=0.2;//hole mobility in m^2/V*s
+k=1.38e-23;//boltzman constant
+h=6.626e-34;//planks constant
+m0=9.1e-31;
+e = 1.6e-19; // Charge of an electron
+Eg=0.7;
+mh=0.37*m0;
+me=0.55*m0;
+r = ((2*%pi*k*T)/(h^2))^1.5;// Temporary variable
+s = exp((-Eg*e)/(k*T));// Temporary variable
+ni=2*((me*mh)^(3/4))*r*s
+disp('m^-3',ni,'the intrinsic consentration is:')
+rho = ni*e*(ue+uh);// Intrinsic Conductivity
+disp('1/(ohm.meter)',rho,'The intrinsic conductivity is')
+p = 1/rho; // Intrinsic resistivity
+disp('Ohm.meter',p,'The intrinsic resistivity is')
diff --git a/3020/CH18/EX18.10/ex18_10.sce b/3020/CH18/EX18.10/ex18_10.sce
new file mode 100755
index 000000000..9e0a33863
--- /dev/null
+++ b/3020/CH18/EX18.10/ex18_10.sce
@@ -0,0 +1,14 @@
+clc;
+clear all;
+uh = 0.013; // Hole mobility in square meters per volt per second
+ue = 0.48; // Electron mobility in square meters per volt per second
+m0=9.1e-31;//mass of electron
+h=6.626e-34;//plank constant
+k=1.38e-23;//boltzmann's constant
+Eg=1.1;//bandgap energy in eV
+e=1.6e-19;//charge of electron
+T=300;//temperature in K
+ni=2*((2*%pi*m0*k*T/(h^2))^1.5)*exp((-Eg*e)/(2*k*T))
+disp('m^-3',ni,'intrinsic concentration is:')
+rhoi = ni*e*(ue+uh);//Electrical conductivity of silicon
+disp('ohm^-1.m^-1',rhoi,'Electrical conductivity of silicon is')
diff --git a/3020/CH18/EX18.11/ex18_11.sce b/3020/CH18/EX18.11/ex18_11.sce
new file mode 100755
index 000000000..be9ac5cd6
--- /dev/null
+++ b/3020/CH18/EX18.11/ex18_11.sce
@@ -0,0 +1,10 @@
+clc;
+clear all;
+Eg=1.12;//bandgap in eV
+mo=9.1e-31;//mass of electron
+me=0.12*mo;//effective mass of electron
+mh=0.28*mo;//effective mass of hole
+k=1.38e-23;//boltzman constant
+T=300;//temperature in K
+Ef=(Eg/2)+(3*k*T/4)*log(mh/me);//fermi level at 300K
+disp('eV',Ef,'fermi level at 300K is:')
diff --git a/3020/CH18/EX18.12/ex18_12.sce b/3020/CH18/EX18.12/ex18_12.sce
new file mode 100755
index 000000000..b84f5209c
--- /dev/null
+++ b/3020/CH18/EX18.12/ex18_12.sce
@@ -0,0 +1,15 @@
+clc;
+clear all;
+Eg=1;//bandgap in eV
+//let me/mh=x
+x=4;//given me/mh value
+k=1.38e-23;//boltzman constant
+//formula is Ef=(Eg/2)+(3*k*T/4)*log(mh/me) fermi level
+//and Ef=Ev+0.5eV so..
+//(Ev+0.5)*1.6e-19=(Ec+Ev)/2
+//at temperature T , (Ev+0.5)*1.6e-19=((3*k*T)/4)*logx
+//so.. 1.6e-19=(3*k*T)/log(x)
+//so.. T=4*1.6e-19/(3*k*log(x))
+T=(4*0.16e-19)/(3*k*log10(x));//temperature at which fermi level is shifted to 10%
+disp('K',T,'temperature at which fermi level is shifted to 10% is:')
+// Wrong answer printed in textbook... checked in calculator also
diff --git a/3020/CH18/EX18.13/ex18_13.sce b/3020/CH18/EX18.13/ex18_13.sce
new file mode 100755
index 000000000..73f185985
--- /dev/null
+++ b/3020/CH18/EX18.13/ex18_13.sce
@@ -0,0 +1,8 @@
+clc;
+clear all;
+ue=0.39;//electon mobility in m^2/V*s
+uh=0.19;//hole mobility in m^2/V*s
+ni=2.4e19;//intrisic carrier concentration in m^-3
+e=1.6e-19;//charge of electron
+sigma=ni*e*(ue+uh);//conductivity of germanium
+disp('W^-1*m^-1',sigma,'conductivity of germanium is:')
diff --git a/3020/CH18/EX18.14/ex18_14.sce b/3020/CH18/EX18.14/ex18_14.sce
new file mode 100755
index 000000000..124b32036
--- /dev/null
+++ b/3020/CH18/EX18.14/ex18_14.sce
@@ -0,0 +1,11 @@
+clc;
+clear all;
+Eg=0.3;//fermi level in eV
+//Ni300=Nc*exp(Ec-Ef300/k*T) so..
+//Ni300=Nc*exp(-Eg*1.6e-19/k*T)
+//and //Ni330=Nc*exp(-(Ec-Ef300)/k*T) so..
+//exp(Ec-Ef300/k*T)=exp(-(Ec-Ef300)/k*T) so..
+//let Ec-Ef300=x
+x=Eg*330/300;//fermi energy lies at
+disp('eV',x,'fermi energy lies at:')
+
diff --git a/3020/CH18/EX18.15/ex18_17.sce b/3020/CH18/EX18.15/ex18_17.sce
new file mode 100755
index 000000000..f2aa9e4d9
--- /dev/null
+++ b/3020/CH18/EX18.15/ex18_17.sce
@@ -0,0 +1,6 @@
+clc;
+clear all;
+Rh=-0.55e-10;//hall coefficient of Cu in m^3/(A*s)
+sigma=5.9e7;//conductivity of Cu in ohm^-1*m^-1
+dm=-Rh*sigma;//drift mobility
+disp('m^2/(V^-1*s^-1)',dm,'drift mobility')
diff --git a/3020/CH18/EX18.16/ex18_16.sce b/3020/CH18/EX18.16/ex18_16.sce
new file mode 100755
index 000000000..0746fec9b
--- /dev/null
+++ b/3020/CH18/EX18.16/ex18_16.sce
@@ -0,0 +1,13 @@
+clc;
+clear all;
+T=300;//temperature in kelvin
+k=1.38e-23;//boltzman constant
+h=6.626e-34;//planks constant
+e = 1.6e-19; // Charge of an electron
+Eg=1.1;
+mo =9.1e-31; // mass of electron
+me=0.31; // Effective mass of electron
+r = ((2*%pi*k*T*me*mo)/(h^2))^1.5;// Temporary variable
+s = exp((-Eg*e)/(2*k*T));// Temporary variable
+ni=2*r*s
+disp('m^-3',ni,'the intrinsic concentration is:')
diff --git a/3020/CH18/EX18.17/ex18_17.sce b/3020/CH18/EX18.17/ex18_17.sce
new file mode 100755
index 000000000..f2aa9e4d9
--- /dev/null
+++ b/3020/CH18/EX18.17/ex18_17.sce
@@ -0,0 +1,6 @@
+clc;
+clear all;
+Rh=-0.55e-10;//hall coefficient of Cu in m^3/(A*s)
+sigma=5.9e7;//conductivity of Cu in ohm^-1*m^-1
+dm=-Rh*sigma;//drift mobility
+disp('m^2/(V^-1*s^-1)',dm,'drift mobility')
diff --git a/3020/CH18/EX18.18/ex18_18.sce b/3020/CH18/EX18.18/ex18_18.sce
new file mode 100755
index 000000000..5dfadda40
--- /dev/null
+++ b/3020/CH18/EX18.18/ex18_18.sce
@@ -0,0 +1,15 @@
+clc;
+clear all;
+e=1.6e-19;//charge of electron
+u=3.2e-3;//
+sigma=5.9e7;//conductivity
+ni=sigma/(u*e);//concentration of conduction electron in Cu
+disp('m^-3',ni,'concentration of conduction electron in Cu is:');
+N=6.022e23;//Avogadro's constant
+de=8900;//density
+m=63.5;//atomic mass of Cu
+ne=1e3;//no of free electrons per atom
+n=N*de*ne/m;//concentration of free electrons per Cu atom
+disp('electrons per m^3',n,'concentration of free electrons per Cu atom is:')
+avg=ni/n;//average no of electrons contributed per Cu atom
+disp('',avg,'average no of electrons contributed per Cu atom');
diff --git a/3020/CH18/EX18.19/ex18_19.sce b/3020/CH18/EX18.19/ex18_19.sce
new file mode 100755
index 000000000..49f0808c8
--- /dev/null
+++ b/3020/CH18/EX18.19/ex18_19.sce
@@ -0,0 +1,20 @@
+clc;
+clear all;
+i=5e-3;//current flowing through specimen in Amp
+V=1.35;//voltage across specimen
+l=1e-2;//lenth of the sample
+b=5e-3;//breadth of the sample
+t=1e-3;//thickness of the sample
+a=5e-6;//area of the sample
+vy=20e-3;//hall voltage
+H=0.45;//magnetic field
+R=V/i;//resistance
+rho=R*a/l;//resistivity
+Ey=vy/t;//hall effect
+J=i/a;//current density
+ne=H*J/Ey;
+Rh=3*%pi/(ne*8);//hall coefficient
+disp('m^3/C',Rh,'hall coefficient is:');
+u=Rh/rho;//mobility of Ge sample
+disp('m^2/V*s',u,'mobility of Ge sample is:')
+
diff --git a/3020/CH18/EX18.2/ex18_2.sce b/3020/CH18/EX18.2/ex18_2.sce
new file mode 100755
index 000000000..e04e4d66a
--- /dev/null
+++ b/3020/CH18/EX18.2/ex18_2.sce
@@ -0,0 +1,11 @@
+clc;
+clear all;
+Nd=1e16;//donar concentration in cm^-3
+ni=1.45e10;//intrinsic carrier concentration
+T=300;//temperature in kelvin
+k=1.38e-23;//boltzmann constant
+//let Efd-Efi=x
+x=k*T*log(Nd/ni);//fermi energy with respect to Ef in J
+E=x/(1.6e-19);//covertion from J to eV
+disp('eV',E,'fermi energy with respect to Ef')
+
diff --git a/3020/CH18/EX18.20/ex18_20.sce b/3020/CH18/EX18.20/ex18_20.sce
new file mode 100755
index 000000000..2b868511a
--- /dev/null
+++ b/3020/CH18/EX18.20/ex18_20.sce
@@ -0,0 +1,9 @@
+clc;
+clear all;
+I=200;//current in Amp
+H=1.5;//applied megnetic field in Wb/m^2
+n=8.4e28;//no of electrons per unit volume in electron/m^3
+d=1e-3;//thickness of the strip in m
+e=1.6e-19;//charge of electron
+Vy=I*H/(n*e*d);//hall potential
+disp('Volt',Vy,'hall potential is:')
diff --git a/3020/CH18/EX18.21/ex18_21.sce b/3020/CH18/EX18.21/ex18_21.sce
new file mode 100755
index 000000000..2ac0ccd8a
--- /dev/null
+++ b/3020/CH18/EX18.21/ex18_21.sce
@@ -0,0 +1,9 @@
+clc;
+clear all;
+Rh=3.66e-4;//hall coefficient of specimen
+rho=8.93e-3;//resistivity of specimen
+e=1.6e-19;//charge of electron
+nh=1/(Rh*e);//carrier concentration
+disp('m^-3',nh,'carrier concentration is');
+u=Rh/rho;//mobility of specimen
+disp('m^2/(V*s)',u,'mobility of specimen')
diff --git a/3020/CH18/EX18.22/ex18_22.sce b/3020/CH18/EX18.22/ex18_22.sce
new file mode 100755
index 000000000..38a90e4b2
--- /dev/null
+++ b/3020/CH18/EX18.22/ex18_22.sce
@@ -0,0 +1,9 @@
+clc;
+clear all;
+Rh=3.66e-11;//hall coefficient in m^3/(A*s)
+sigma=112e7;//conductivity in ohm^-1* m^-1
+e=1.6e-19;
+n=3*%pi/(8*Rh*e);//concentration of electron in m^-3
+disp('m^-3',n,'concentration of electron:')
+ue=sigma/(n*e);//elctron mobility at room temperature
+disp('m^2/(V*s)',ue,'elctron mobility at room temperature is:');
diff --git a/3020/CH18/EX18.23/ex18_23.sce b/3020/CH18/EX18.23/ex18_23.sce
new file mode 100755
index 000000000..67db00200
--- /dev/null
+++ b/3020/CH18/EX18.23/ex18_23.sce
@@ -0,0 +1,10 @@
+clc;
+clear all;
+I=50;//current in amp
+B=1.5;//megnetic field in Tesla
+t=0.5e-2;//thickness of the slab
+d=2e-2;//width of the slab
+N=8.4e28;//concentration of electrons
+e=1.6e-19;//charge of electron
+Vh=B*I/(N*e*d);//hall voltage applied
+disp('Volt',Vh,'hall voltage applied is:')
diff --git a/3020/CH18/EX18.3/ex18_3.sce b/3020/CH18/EX18.3/ex18_3.sce
new file mode 100755
index 000000000..f9a7cc7c5
--- /dev/null
+++ b/3020/CH18/EX18.3/ex18_3.sce
@@ -0,0 +1,13 @@
+clc;
+clear all;
+ue=0.39;//electon mobility in m^2/V*s
+uh=0.19;//hole mobility in m^2/V*s
+ni=2.5e19;//intrisic carrier concentration in m^-3
+l=1e-2;//length in meter
+w=1e-3;//width of germanium
+t=1e-3;//thickness of germanium
+A=w*t;//area of germanium
+e=1.6e-19;
+sigma=ni*e*(ue+uh);//conductivity of germanium
+R=l/(sigma*A);//resistance of germanium
+disp('ohm',R,'resistance of germanium is:')
diff --git a/3020/CH18/EX18.4/ex18_4.sce b/3020/CH18/EX18.4/ex18_4.sce
new file mode 100755
index 000000000..f2e03ea0e
--- /dev/null
+++ b/3020/CH18/EX18.4/ex18_4.sce
@@ -0,0 +1,8 @@
+clc;
+clear all;
+ue=0.13;//electon mobility in m^2/V*s
+uh=0.05;//hole mobility in m^2/V*s
+ni=1.5e16;//intrisic carrier concentration in m^-3
+e=1.6e-19;//charge of electron
+sigma=ni*e*(ue+uh);//conductivity of germanium
+disp('ohm^-1 m^-1',sigma,'conductivity of semiconductor is:')
diff --git a/3020/CH18/EX18.5/ex18_5.sce b/3020/CH18/EX18.5/ex18_5.sce
new file mode 100755
index 000000000..63cec24c2
--- /dev/null
+++ b/3020/CH18/EX18.5/ex18_5.sce
@@ -0,0 +1,11 @@
+clc;
+clear all;
+ue=3900;//electon mobility in cm^2/V*s
+uh=1900;//hole mobility in cm^2/V*s
+ni=2.15e13;//intrisic carrier concentration in cm^-3
+e=1.6e-19;//charge of electron
+sigma=ni*e*(ue+uh);//conductivity of germanium
+disp('ohm^-1 cm^-1',sigma,'conductivity of semiconductor is:')
+rho=1/sigma;
+disp('ohm cm',rho,'ressistivity of semiconductor is')
+//Slight variation in answer than book.. there is mistake in book.. checked in calculator also..
diff --git a/3020/CH18/EX18.6/ex18_6.sce b/3020/CH18/EX18.6/ex18_6.sce
new file mode 100755
index 000000000..a65758400
--- /dev/null
+++ b/3020/CH18/EX18.6/ex18_6.sce
@@ -0,0 +1,12 @@
+clc;
+clear all;
+ue=0.4;//electon mobility in m^2/V*s
+uh=0.2;//hole mobility in m^2/V*s
+ni=2.1e19;//intrisic carrier concentration in m^-3
+e=1.6e-19;//charge of electron
+p=4.5e23;//density of hole
+sigma=ni*e*(ue+uh);//conductivity of boron
+disp('ohm^-1 m^-1',sigma,'conductivity of semiconductor is:')
+sigma1=p*e*uh;
+disp('ohm^-1 m^-1',sigma1,'conductivity of boron dopped semiconductor is:')
+
diff --git a/3020/CH18/EX18.7/ex18_7.sce b/3020/CH18/EX18.7/ex18_7.sce
new file mode 100755
index 000000000..f2581b9c7
--- /dev/null
+++ b/3020/CH18/EX18.7/ex18_7.sce
@@ -0,0 +1,20 @@
+clc;
+clear all;1
+//case
+ue=1.35;//electon mobility in m^2/V*s
+uh=0.45;//hole mobility in m^2/V*s
+ni=1.45e13;//intrisic carrier concentration in m^-3
+e=1.6e-19;
+A=1e-4;
+l=1e-2;
+sigma=ni*e*(ue+uh)//conductivity of Si crystal
+R=l/(sigma*A);//resistance of Si crystal
+disp('ohm',R,'resistance of Si crystal is:')
+//case 2
+Nsi=5e28;
+Nd=Nsi/1e9;
+p=ni^2/Nd;//concentration of hole;
+sigma1=Nd*e*ue;//conductivity
+Re=l/(sigma1*A);//resistance
+disp('ohm',,Re,'resistance is:')
+
diff --git a/3020/CH18/EX18.8/ex18_8.sce b/3020/CH18/EX18.8/ex18_8.sce
new file mode 100755
index 000000000..fc2a9f655
--- /dev/null
+++ b/3020/CH18/EX18.8/ex18_8.sce
@@ -0,0 +1,23 @@
+clc;
+clear all;
+T=300;//temperature in kelvin
+rho=2.12;//resistivity in ohm*m
+ue=0.36;//mobility of electron in m^2/(V*s)
+uh=0.17;//mobility of hole in m^2/(V*s)
+Kb=1.38e-23;//boltzman constant
+e = 1.6e-19;
+sigma=1/rho;//conductivity of Ge
+ni=sigma/(e*(ue+uh));//intrinsic concentration
+disp('',ni,'intrinsic concentration is:')
+mo=9.1e-31;//mass of electron
+me=0.5*mo;
+mh=0.37*mo;
+h=6.626e-34;//plank constant
+x=(2*%pi*Kb*T*me/(h*h))^(3/2);//temporary variable
+Nc=2*x;
+Nv=2*(2*%pi*Kb*T/(h*h))^(3/2)*(mh)^(3/2);
+Eg=2*Kb*T*log((Nc*Nv)^0.5/ni);
+Eg1=Eg/(1.6e-19);
+disp('eV',Eg1,'bandgap of Ge is:')
+
+
diff --git a/3020/CH18/EX18.9/ex18_9.sce b/3020/CH18/EX18.9/ex18_9.sce
new file mode 100755
index 000000000..bb0919eff
--- /dev/null
+++ b/3020/CH18/EX18.9/ex18_9.sce
@@ -0,0 +1,11 @@
+clc;
+clear all;
+m0=9.1e-31;//mass of electron
+h=6.626e-34;//plank constant
+k=1.38e-23;//boltzman constant
+Eg=0.7;//bandgap energy in eV
+e=1.6e-19;//charge of electron
+T=300;//temperature in K
+ni=2*((2*%pi*m0*k*T/(h^2))^1.5)*exp((-Eg*e)/(2*k*T))
+disp('m^-3',ni,'intrinsic concentration is:')
+// slight variation in answer as compared to textbook... checked in calculator
generated by cgit (git 2.34.1) at 2024-12-20 09:47:29 +0000