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+clc;
+clear all;
+T=300;//temperature in kelvin
+rho=2.12;//resistivity in ohm*m
+ue=0.36;//mobility of electron in m^2/(V*s)
+uh=0.17;//mobility of hole in m^2/(V*s)
+Kb=1.38e-23;//boltzman constant
+e = 1.6e-19;
+sigma=1/rho;//conductivity of Ge
+ni=sigma/(e*(ue+uh));//intrinsic concentration
+disp('',ni,'intrinsic concentration is:')
+mo=9.1e-31;//mass of electron
+me=0.5*mo;
+mh=0.37*mo;
+h=6.626e-34;//plank constant
+x=(2*%pi*Kb*T*me/(h*h))^(3/2);//temporary variable
+Nc=2*x;
+Nv=2*(2*%pi*Kb*T/(h*h))^(3/2)*(mh)^(3/2);
+Eg=2*Kb*T*log((Nc*Nv)^0.5/ni);
+Eg1=Eg/(1.6e-19);
+disp('eV',Eg1,'bandgap of Ge is:')
+
+