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+clc;
+clear all;1
+//case
+ue=1.35;//electon mobility in m^2/V*s
+uh=0.45;//hole mobility in m^2/V*s
+ni=1.45e13;//intrisic carrier concentration in m^-3
+e=1.6e-19;
+A=1e-4;
+l=1e-2;
+sigma=ni*e*(ue+uh)//conductivity of Si crystal
+R=l/(sigma*A);//resistance of Si crystal
+disp('ohm',R,'resistance of Si crystal is:')
+//case 2
+Nsi=5e28;
+Nd=Nsi/1e9;
+p=ni^2/Nd;//concentration of hole;
+sigma1=Nd*e*ue;//conductivity
+Re=l/(sigma1*A);//resistance
+disp('ohm',,Re,'resistance is:')
+