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diff --git a/3020/CH18/EX18.10/ex18_10.sce b/3020/CH18/EX18.10/ex18_10.sce
new file mode 100755
index 000000000..9e0a33863
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+clc;
+clear all;
+uh = 0.013; // Hole mobility in square meters per volt per second
+ue = 0.48; // Electron mobility in square meters per volt per second
+m0=9.1e-31;//mass of electron
+h=6.626e-34;//plank constant
+k=1.38e-23;//boltzmann's constant
+Eg=1.1;//bandgap energy in eV
+e=1.6e-19;//charge of electron
+T=300;//temperature in K
+ni=2*((2*%pi*m0*k*T/(h^2))^1.5)*exp((-Eg*e)/(2*k*T))
+disp('m^-3',ni,'intrinsic concentration is:')
+rhoi = ni*e*(ue+uh);//Electrical conductivity of silicon 
+disp('ohm^-1.m^-1',rhoi,'Electrical conductivity of silicon is')