1 files changed, 20 insertions, 20 deletions
diff --git a/284/CH11/EX11.5/ex_5.sce b/284/CH11/EX11.5/ex_5.sce
index 4405168c9..0f0dd3f7b 100755
--- a/284/CH11/EX11.5/ex_5.sce
+++ b/284/CH11/EX11.5/ex_5.sce
@@ -1,20 +1,20 @@
-// Chapter 11_ Metal-Oxide-Semiconductor Field Effect Transistor:Additional Concepts
-//Caption_Lightly doped drain transistor
-//Ex_5//page 531
-tox=500*10^-8
-VFBO=-1.25     //initial flat band voltage
-e=1.6*10^-19
-eps_ox=3.9*8.85*10^-14
-ni=1.5*10^10     //intrinsic carrier concentration
-VT=0.70
-Na=5*10^15
-phi_fpo=0.0259*log(Na/ni)
-xdto=(4*eps*phi_fpo/(e*Na))^0.5
-Cox=eps_ox/tox
-VTO=VFBO+2*phi_fpo+(e*Na*xdto)/Cox
-x=VT-VTO
-Dt=Cox*x/e    //implant dose
-xt=0.15*10^-4    //depth to which uniform implant extends
-Nsa=Dt/xt
-Ns=Nsa+Na
-printf('The required implant dose to achieve the desired threshold voltage is %1.2f per cm^2',Dt)
+// Chapter 11_ Metal-Oxide-Semiconductor Field Effect Transistor:Additional Concepts
+//Caption_Lightly doped drain transistor
+//Ex_5//page 531
+tox=500*10^-8
+VFBO=-1.25     //initial flat band voltage
+e=1.6*10^-19
+eps_ox=3.9*8.85*10^-14
+ni=1.5*10^10     //intrinsic carrier concentration
+VT=0.70
+Na=5*10^15
+phi_fpo=0.0259*log(Na/ni)
+xdto=(4*eps_ox*phi_fpo/(e*Na))^0.5
+Cox=eps_ox/tox
+VTO=VFBO+2*phi_fpo+(e*Na*xdto)/Cox
+x=VT-VTO
+Dt=Cox*x/e    //implant dose
+xt=0.15*10^-4    //depth to which uniform implant extends
+Nsa=Dt/xt
+Ns=Nsa+Na
+printf('The required implant dose to achieve the desired threshold voltage is %1.2f per cm^2',Dt)
+\ No newline at end of file