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+clc
+A= 1
+disp("A= "+string(A)+"cm^2") //initializing value of diode area
+Na=5*10^17
+disp("Na = "+string(Na)+"cm^-3") //initializing value of p side doping
+Nd=10^16
+disp("Nd = "+string(Nd)+"cm^-3") //initializing value of n side doping
+Dn = 20
+disp("Dn= "+string(Dn)+"cm^2/s")//initializing value of electron diffusion coefficient
+Dp = 10
+disp("Dp= "+string(Dp)+"cm^2/s")//initializing value of hole diffusion coefficient
+Tn = 3*10^-7
+disp("Tn= "+string(Tn)+"s")//inializing value of electron minority carrier lifetime
+Tp = 10^-7
+disp("Tp= "+string(Tp)+"s")//inializing value of hole minority carrier lifetime
+kbT = 0.026
+disp("kbT = "+string(kbT)+"V/K") //initializing value of kbT at 300K
+IL = 25*10^-3
+disp("IL= "+string(IL)+"A")//initializing value of photocurrent or short circuit current of solar cell 
+e = 1.6*10^-19
+disp("e= "+string(e)+"C")//initializing value of charge of electron
+ni = 1.5*10^10
+disp("ni = "+string(ni)+"cm^-3") //initializing value of electron density of ionisation electron for silicon
+Io = 3.66*10^-11
+disp("Io= "+string(Io)+"A")//initializing value of diode saturation current
+Voc= (kbT)*log(1+(IL/Io))
+disp("The open circuit voltage is ,Voc= (kbT)*log(1+(IL/Io))= "+string(Voc)+"V")//calculation
+P = 0.8*IL*Voc 
+disp("The power per solar cell is ,P = 0.8*IL*Voc = "+string(P)+"W")//calculation
+// Note: Answer given in the book is incorrect it is 10.6 mW not 1.06 mW
+N_series = 10/(0.9*Voc)
+disp("The number of solar cell needed to produce output power 10V is ,N_series = 10/(0.9*Voc) = "+string(N_series))//calculation
+N_parallel = 10/(0.9*IL*10)
+disp("The number of solar cell needed to produce output power 10W is ,N_parallel = 10/(0.9*IL*10) = "+string(N_parallel))//calculation
+// Note : due to different precisions taken by me and the author ... my answer differ 
+