diff options
Diffstat (limited to '2792/CH11/EX11.5/Ex11_5.sce')
-rwxr-xr-x | 2792/CH11/EX11.5/Ex11_5.sce | 33 |
1 files changed, 33 insertions, 0 deletions
diff --git a/2792/CH11/EX11.5/Ex11_5.sce b/2792/CH11/EX11.5/Ex11_5.sce new file mode 100755 index 000000000..b060bb287 --- /dev/null +++ b/2792/CH11/EX11.5/Ex11_5.sce @@ -0,0 +1,33 @@ +clc
+A= 1
+disp("A= "+string(A)+"cm^2") //initializing value of diode area
+Na=5*10^17
+disp("Na = "+string(Na)+"cm^-3") //initializing value of p side doping
+Nd=10^16
+disp("Nd = "+string(Nd)+"cm^-3") //initializing value of n side doping
+Dn = 20
+disp("Dn= "+string(Dn)+"cm^2/s")//initializing value of electron diffusion coefficient
+Dp = 10
+disp("Dp= "+string(Dp)+"cm^2/s")//initializing value of hole diffusion coefficient
+Tn = 3*10^-7
+disp("Tn= "+string(Tn)+"s")//inializing value of electron minority carrier lifetime
+Tp = 10^-7
+disp("Tp= "+string(Tp)+"s")//inializing value of hole minority carrier lifetime
+kbT = 0.026
+disp("kbT = "+string(kbT)+"eV/K") //initializing value of kbT at 300K
+IL = 25*10^-3
+disp("IL= "+string(IL)+"A")//initializing value of photocurrent
+e = 1.6*10^-19
+disp("e= "+string(e)+"C")//initializing value of charge of electron
+ni = 1.5*10^10
+disp("ni = "+string(ni)+"cm^-3") //initializing value of electron density of ionisation electron for silicon
+Ln = sqrt(Dn*Tn)
+disp("The electron diffusion length is ,Ln = sqrt(Dn*Tn)= "+string(Ln)+"cm")//calculation
+Lp = sqrt(Dp*Tp)
+disp("The hole diffusion length is ,Lp = sqrt(Dp*Tp)= "+string(Lp)+"cm")//calculation
+Io = A*e*(ni)^2*((Dn/(Ln*Na))+(Dp/(Lp*Nd)))
+disp("The saturation current is ,Io = A*e*(ni)^2*((Dn/(Ln*Na))+(Dp/(Lp*Nd)))= "+string(Io)+"A")//calculation
+Voc= (kbT)*log(1+(IL/Io))
+disp("The open circuit voltage is ,Voc= (kbT)*log(1+(IL/Io))= "+string(Voc)+"V")//calculation
+
+
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