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diff --git a/2792/CH11/EX11.4/Ex11_4.sce b/2792/CH11/EX11.4/Ex11_4.sce
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+clc
+A= 10^4*10^-8
+disp("A= "+string(A)+"cm^2") //initializing value of diode area
+Na=2*10^16
+disp("Na = "+string(Na)+"cm^-3") //initializing value of p side doping
+Nd=10^16
+disp("Nd = "+string(Nd)+"cm^-3") //initializing value of n side doping
+Dn = 20
+disp("Dn= "+string(Dn)+"cm^2/s")//initializing value of electron diffusion coefficient
+Dp = 12
+disp("Dp= "+string(Dp)+"cm^2/s")//initializing value of hole diffusion coefficient
+Tn = 10^-8
+disp("Tn= "+string(Tn)+"s")//inializing value of electron minority carrier lifetime
+Tp = 10^-8
+disp("Tp= "+string(Tp)+"s")//inializing value of hole minority carrier lifetime
+GL = 10^22
+disp("GL= "+string(GL)+"cm^-3s^-1")//inializing value of rate of e-h pair production
+kbT = 0.026
+disp("kbT = "+string(kbT)+"V/K") //initializing value of kbT at 300K
+Es = 11.9*8.85*10^-14
+disp("Es = "+string(Es)) //initializing value of relative permitivity
+e = 1.6*10^-19
+disp("e= "+string(e)+"C")//initializing value of charge of electron
+VR = 2
+disp("VR= "+string(VR)+"V")//initializing value of Reverse bias voltage
+ni = 1.5*10^10
+disp("ni = "+string(ni)+"cm^-3") //initializing value of intrinsic carrier concentration
+Ln = sqrt(Dn*Tn)
+disp("The electron diffusion length is ,Ln = sqrt(Dn*Tn)= "+string(Ln)+"cm")//calculation
+Lp = sqrt(Dp*Tp)
+disp("The hole diffusion length is ,Lp = sqrt(Dp*Tp)= "+string(Lp)+"cm")//calculation
+Vbi = kbT*log((Na*Nd)/(ni)^2)
+disp("The built in voltage is ,Vbi = kbT*log((Na*Nd)/(ni)^2)= "+string(Vbi)+"V")//calculation
+W = sqrt((2*Es*(Na+Nd)*(Vbi+VR))/(e*Na*Nd))
+disp("The depletion width is ,W = sqrt((2*Es*(Na+Nd)*(Vbi+VR))/(e*Na*Nd))= "+string(W)+"cm")//calculation
+IL= (e*A*GL*(W+Ln+Lp))
+disp("The photocurrent is ,IL= (e*A*GL*(W+Ln+Lp)= "+string(IL)+"A")//calculation
+ 
+