diff options
Diffstat (limited to '2300/CH3')
-rwxr-xr-x | 2300/CH3/EX3.11.1/Ex3_1.sce | 23 | ||||
-rwxr-xr-x | 2300/CH3/EX3.11.2/Ex3_2.sce | 16 | ||||
-rwxr-xr-x | 2300/CH3/EX3.11.4/Ex3_4.sce | 25 | ||||
-rwxr-xr-x | 2300/CH3/EX3.11.5/Ex3_5.sce | 32 | ||||
-rwxr-xr-x | 2300/CH3/EX3.11.6/Ex3_6.sce | 18 | ||||
-rwxr-xr-x | 2300/CH3/EX3.11.7/Ex3_7.sce | 13 | ||||
-rwxr-xr-x | 2300/CH3/EX3.11.8/Ex3_8.sce | 18 |
7 files changed, 145 insertions, 0 deletions
diff --git a/2300/CH3/EX3.11.1/Ex3_1.sce b/2300/CH3/EX3.11.1/Ex3_1.sce new file mode 100755 index 000000000..05cd35166 --- /dev/null +++ b/2300/CH3/EX3.11.1/Ex3_1.sce @@ -0,0 +1,23 @@ + +//scilab 5.4.1
+//WINDOWS 7 Operating System
+//chapter 3 PROPERTIES OF SEMICONDUCTORS
+//example 1
+
+clc
+//Given data
+T=300; //K
+ni=1.5*10^16; //Intrinsic carrier concentartion per m^3
+yn=0.13; //Electron mobility in m^2/(V*s)
+yp=0.05; //Hole mobility in m^2/(V*s)
+e=1.6*10^-19; //Charge of electron in C
+
+//Required Formula
+Gi=e*ni*(yn+yp); //Intrinsic conductivity
+
+Ri=1/Gi; //Intrinsic resistivity
+
+disp('S/m',Gi,'Intrinsic conductivity=');
+
+disp('ohm*meter',Ri,'Intrinsic resistivity=');
+//End
diff --git a/2300/CH3/EX3.11.2/Ex3_2.sce b/2300/CH3/EX3.11.2/Ex3_2.sce new file mode 100755 index 000000000..acdcd1024 --- /dev/null +++ b/2300/CH3/EX3.11.2/Ex3_2.sce @@ -0,0 +1,16 @@ + +//scilab 5.4.1
+//WINDOWS 7 Operating Systems
+//chapter 3 PROPERTIES OF SEMICONDUCTORS
+
+//example 2
+clc
+//Given data
+Sn=480; //Conductivity in S/m
+yn=0.38; //Electron mobility in m^2/(V*s)
+e=1.6*10^-19; //Charge of electron in C
+
+//Required Formula
+Nd=Sn/(e*yn); //Concentration of donor atoms per m^3
+ disp('m^-3',Nd,'Concentration of donor atoms');
+ //End
diff --git a/2300/CH3/EX3.11.4/Ex3_4.sce b/2300/CH3/EX3.11.4/Ex3_4.sce new file mode 100755 index 000000000..d0cb29369 --- /dev/null +++ b/2300/CH3/EX3.11.4/Ex3_4.sce @@ -0,0 +1,25 @@ + +//scilab 5.4.1
+//OS-WINDOWS 7
+//chapter 3 PROPERTIES OF SEMICONDUCTORS
+//example 4
+
+clc
+//Given data
+T=300; //K
+ni=1.5*10^16; //Intrinsic carrier concentartion per m^3
+yn=0.13; //Electron mobility in m^2/(V*s)
+yp=0.05; //Hole mobility in m^2/(V*s)
+e=1.6*10^-19; //Charge of electron in C
+l=0.01; //length in m
+a=10^-6; //cross sectional area in m^2
+
+//Required Formula
+Gi=e*ni*(yn+yp); //Intrinsic conductivity
+
+Ri=l/(Gi*a); //Required resistance
+
+disp('S/m',Gi,'Intrinsic conductivity=');
+
+disp('ohm',Ri,'required resistance');
+//End
diff --git a/2300/CH3/EX3.11.5/Ex3_5.sce b/2300/CH3/EX3.11.5/Ex3_5.sce new file mode 100755 index 000000000..380a13f33 --- /dev/null +++ b/2300/CH3/EX3.11.5/Ex3_5.sce @@ -0,0 +1,32 @@ + +//scilab 5.4.1
+//windows 7 operating system
+//chapter 3:Properties of Semiconductors
+clc
+clear
+//given
+z=(100/60);//z=conductiarrier concentration in /(m^3)
+ni=2.5*10^(19);//ni=intrinsic conductivity of intrinsic material in S/m
+//(P/N)=(1/2);//(P/N)=ratio of hole mobility(P) to electron mobility(N)
+e=1.6*(10^-19);//e=charge of electron in Coulomb
+N=(z/(e*ni*(1+(1/2))))
+disp("(m^2)/(V.s)",N,"N=")
+P=(N/2)
+disp("(m^2)/(V.s)",P,"P=")
+//Nd+p=Na+n;n=electron concentration;p=hole concentration
+//np=(ni^2)
+Nd=(10^20)//Nd=donor concentration in /(m^3)
+Na=5*(10^19)//Na=acceptor concentration in /(m^3)
+n=(1/2)*((Nd-Na)+sqrt(((Nd-Na)^2)+(4*(ni^2))))
+disp("/(m^3)",n,"n=")
+p=(ni^2)/n
+disp("/(m^3)",p,"p=")
+Z=e*((n*N)+(p*P))//Z=conductivity of doped sample in S/m
+disp("S/m",Z,"Z=")
+F=200//F=applied electric field in V/cm
+J=Z*F//J=total conduction current density in A/(m^2)
+disp("A/(m^2)",J,"J=")
+
+
+
+
diff --git a/2300/CH3/EX3.11.6/Ex3_6.sce b/2300/CH3/EX3.11.6/Ex3_6.sce new file mode 100755 index 000000000..baab72d4b --- /dev/null +++ b/2300/CH3/EX3.11.6/Ex3_6.sce @@ -0,0 +1,18 @@ + +//scilab 5.4.1
+//windows 7 operating system
+//chapter 3:Properties of Semiconductors
+clc
+clear
+//given
+ni=2.5*10^(19);//ni=intrinsic conductivity of intrinsic material in S/m
+Nd=5*(10^19)//Nd=donor concentration in /(m^3)
+n=(1/2)*(Nd+sqrt((Nd^2)+(4*(ni^2))))//n=electron concentration
+disp("/(m^3)",n,"n=")
+p=(ni^2)/n//p=hole concentration
+disp("/(m^3)",p,"p=")
+N=0.38//N=electron mobility in (m^2)/(V.s)
+P=0.18//P=hole mobility in (m^2)/(V.s)
+e=1.6*(10^-19)//e=electronic charge in Coulomb
+Z=e*((n*N)+(p*P))//Z=conductivity of doped sample in S/m
+disp("S/m",Z,"Z=")
diff --git a/2300/CH3/EX3.11.7/Ex3_7.sce b/2300/CH3/EX3.11.7/Ex3_7.sce new file mode 100755 index 000000000..aa477e259 --- /dev/null +++ b/2300/CH3/EX3.11.7/Ex3_7.sce @@ -0,0 +1,13 @@ + +//scilab 5.4.1
+//windows 8 operating system
+//chapter 3:Properties of Semiconductors
+clc
+clear
+//given
+c=3*(10^8);//c=velocity of light in vacuum in m/s
+h=6.6*(10^-34);//h=Planck's constant in J.s
+Eg=1.98*1.6*(10^-19)//Eg=band gap in J
+//calculating Y=required wavelength
+Y=((c*h)/Eg)/(10^-9)
+disp("nm",Y,"Y=")
diff --git a/2300/CH3/EX3.11.8/Ex3_8.sce b/2300/CH3/EX3.11.8/Ex3_8.sce new file mode 100755 index 000000000..68d0423e2 --- /dev/null +++ b/2300/CH3/EX3.11.8/Ex3_8.sce @@ -0,0 +1,18 @@ + +//scilab 5.4.1
+//windows 7 operating system
+//chapter 3:Properties of Semiconductors
+clc
+clear
+//given
+RH=(10^-2);//RH=Hall coefficient in (m^3)/C
+VH=(10^-3);//VH=Hall Voltage in V
+b=2*(10^-3);//b=width in m
+I=(10^-3);//I=current in A
+//RH=(VH*b)/(I*B)
+B=(VH*b)/(I*RH)//B=magnetic field
+disp("T",B,"B=")
+t=(10^-3)//t=thickness in m
+FH=(VH/t)//FH=Hall field
+disp("V/m",FH,"FH=")
+
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