diff options
Diffstat (limited to '2198')
86 files changed, 1420 insertions, 0 deletions
diff --git a/2198/CH1/EX1.10.1/Ex1_10_1.sce b/2198/CH1/EX1.10.1/Ex1_10_1.sce new file mode 100755 index 000000000..43c1e60c1 --- /dev/null +++ b/2198/CH1/EX1.10.1/Ex1_10_1.sce @@ -0,0 +1,17 @@ +//Ex 1.10.1
+clc;clear;close;
+format('v',9);
+
+//Given :
+l=4*10^-2;//m
+A=10*10^-6;//m^2
+V=1;//Volt
+I=5*10^-3;//A
+q=1.6*10^-19;//Coulomb
+mu=1300;//cm^2/V-s
+J=I/A;//A/m^2
+E=V/l;//V/m
+n=J/(q*mu*10^-4*E);
+v=mu*10^-4*E;//m/s
+disp(n,"Concentration of electron(per m^3) : ");
+disp(v,"Electron velocity(m/s) : ");
diff --git a/2198/CH1/EX1.11.1/Ex1_11_1.sce b/2198/CH1/EX1.11.1/Ex1_11_1.sce new file mode 100755 index 000000000..27ff0af4e --- /dev/null +++ b/2198/CH1/EX1.11.1/Ex1_11_1.sce @@ -0,0 +1,13 @@ +//Ex 1.11.1
+clc;clear;close;
+format('v',9);
+
+//Given :
+ni=1.5*10^10/10^-6;//per m^3
+mu_n=1800*10^-4;//m^2/V-s
+mu_p=500*10^-4;//m^2/V-s
+q=1.6*10^-19;//Coulomb
+sigma_i=ni*(mu_n+mu_p)*q;//(ohm-m)^-1
+disp(sigma_i,"Conductivity in (ohm-m)^-1 : ");
+rho_i=1/sigma_i;//ohm-m
+disp(rho_i,"Resistivity in ohm-m : ");
diff --git a/2198/CH1/EX1.11.10/Ex1_11_10.sce b/2198/CH1/EX1.11.10/Ex1_11_10.sce new file mode 100755 index 000000000..6cc00a179 --- /dev/null +++ b/2198/CH1/EX1.11.10/Ex1_11_10.sce @@ -0,0 +1,12 @@ +//Ex 1.11.10
+clc;clear;close;
+format('v',9);
+
+//Given :
+ni=2.5*10^13;//per cm^3
+mu_p=1800;//cm^2/V-s
+mu_n=3800;//cm^2/V-s
+q=1.6*10^-19;//Coulomb
+sigma_i=ni*q*(mu_n+mu_p);//(ohm-cm)^-1
+rho_i=1/sigma_i;//ohm-cm
+disp(round(rho_i),"Resistivity of Ge(ohm-cm) : ");
diff --git a/2198/CH1/EX1.11.11/Ex1_11_11.sce b/2198/CH1/EX1.11.11/Ex1_11_11.sce new file mode 100755 index 000000000..7b6aa76f8 --- /dev/null +++ b/2198/CH1/EX1.11.11/Ex1_11_11.sce @@ -0,0 +1,14 @@ +//Ex 1.11.11
+clc;clear;close;
+format('v',9);
+
+//Given :
+ni=1.2*10^16;//per m^3
+p=10^22;//per m^3
+mu_p=500*10^-4;//cm^2/V-s
+mu_n=1350*10^-4;//cm^2/V-s
+q=1.6*10^-19;//Coulomb
+n=ni^2/p;//per m^3
+disp(n,"Electron concentration per m^3 : ");
+sigma=q*(n*mu_n+p*mu_p);//(ohm-m)^-1
+disp(sigma,"Conductivity of Si(ohm-m)^-1 : ");
diff --git a/2198/CH1/EX1.11.2/Ex1_11_2.sce b/2198/CH1/EX1.11.2/Ex1_11_2.sce new file mode 100755 index 000000000..94c688621 --- /dev/null +++ b/2198/CH1/EX1.11.2/Ex1_11_2.sce @@ -0,0 +1,11 @@ +//Ex 1.11.2
+clc;clear;close;
+format('v',9);
+
+//Given :
+T=300;//K
+Ao=2.735*10^31;//constant for Si
+k=86*10^-6;//boltzman constant
+EGO=1.1;//volt(Bandgap energy)
+ni=sqrt(Ao*T^3*exp(-EGO/k/T));//per cm^3
+disp(ni,"Intrinsic carrier concentration per cm^3 : ");
diff --git a/2198/CH1/EX1.11.3/Ex1_11_3.sce b/2198/CH1/EX1.11.3/Ex1_11_3.sce new file mode 100755 index 000000000..bf98455bb --- /dev/null +++ b/2198/CH1/EX1.11.3/Ex1_11_3.sce @@ -0,0 +1,19 @@ +//Ex 1.11.3
+clc;clear;close;
+format('v',9);
+
+//Given :
+A=1*10^-6;//m^2
+R=3.6*10^-4/10^-2;//ohm/m
+n=9*10^26;//electrons/m^3
+J=3*10^6;//A/m^2
+q=1.6*10^-19;//Coulomb
+I=J*A;//A
+disp(I,"(i) Current in A : ");
+rho=R*A;//ohm-m
+sigma=1/rho;//(ohm-m)^-1
+disp(sigma,"(ii) Conductivity in (ohm-m)^-1");
+v=J/n/q;//m/s
+disp(v,"(iii) velocity of free electrons in m/s : ");
+mu=sigma/n/q;//m^2/V-s
+disp(mu,"(iv) Mobility in m^2/V-s ; ");
diff --git a/2198/CH1/EX1.11.4/Ex1_11_4.sce b/2198/CH1/EX1.11.4/Ex1_11_4.sce new file mode 100755 index 000000000..06aee80cb --- /dev/null +++ b/2198/CH1/EX1.11.4/Ex1_11_4.sce @@ -0,0 +1,19 @@ +//Ex 1.11.4
+clc;clear;close;
+format('v',9);
+
+//Given :
+rho=3*10^5*10^-2;//ohm-m
+T1=30+273;//K
+mu_n=0.13;//m^2/V-s
+mu_p=0.05;//m^2/V-s
+q=1.6*10^-19;//Coulomb
+T2=100+273;//K
+sigma_i=1/rho;//(ohm-m)^-1
+ni1=sigma_i/q/(mu_n+mu_p);//electrons/m^3
+disp(ni1,"Intrinsic concentration at 30 degree C(per m^3) : ");
+k=8.62*10^-5;//eV/K(Boltzman constant)
+EGO=1.21;//V(Energy band gap)
+Ao=ni1^2/(T1^3*exp(-EGO/k/T1));//constant
+ni2=sqrt(Ao*T2^3*exp(-EGO/k/T2));//per cm^3
+disp(ni2,"Intrinsic concentration at 100 degree C(per m^3) : ");
diff --git a/2198/CH1/EX1.11.5/Ex1_11_5.sce b/2198/CH1/EX1.11.5/Ex1_11_5.sce new file mode 100755 index 000000000..d547687eb --- /dev/null +++ b/2198/CH1/EX1.11.5/Ex1_11_5.sce @@ -0,0 +1,16 @@ +//Ex 1.11.5
+clc;clear;close;
+format('v',9);
+
+//Given :
+l=0.1*10^-2;//m
+R=1.5*10^3;//ohm
+mu_n=0.14;//m^2/V-s
+mu_p=0.05;//m^2/V-s
+A=8*10^-8;//m^2
+ni=1.5*10^10*10^6;// per m^3
+q=1.6*10^-19;//Coulomb
+rho_n=R*A/l;//ohm-m
+sigma_n=1/rho_n;//(ohm-m)^-1
+ND=sigma_n/mu_n/q;//
+disp(ND,"Majority Carrier density(per m^3) : ");
diff --git a/2198/CH1/EX1.11.6/Ex1_11_6.sce b/2198/CH1/EX1.11.6/Ex1_11_6.sce new file mode 100755 index 000000000..4b8550f77 --- /dev/null +++ b/2198/CH1/EX1.11.6/Ex1_11_6.sce @@ -0,0 +1,18 @@ +//Ex 1.11.6
+clc;clear;close;
+format('v',9);
+
+//Given :
+A=2.5*10^-4;//m^2
+n=1.5*10^16;//per m^3
+q=1.6*10^-19;//Coulomb
+mu_n=0.14;//m^2/V-s
+mu_p=0.05;//m^2/V-s
+I=1.2*10^-3;//A
+V=9;//Volts
+ni=n;// per m^3
+sigma_i=ni*q*(mu_n+mu_p);//(ohm-m)^-1
+rho_i=1/sigma_i;//ohm-m
+R=V/I;//ohm
+l=R*A/rho_i;//m
+disp(l*1000,"Length of the bar(mm) : ");
diff --git a/2198/CH1/EX1.11.7/Ex1_11_7.sce b/2198/CH1/EX1.11.7/Ex1_11_7.sce new file mode 100755 index 000000000..a47e34e58 --- /dev/null +++ b/2198/CH1/EX1.11.7/Ex1_11_7.sce @@ -0,0 +1,19 @@ +//Ex 1.11.7
+clc;clear;close;
+format('v',8);
+
+//Given :
+n=5*10^22;//per cm^3
+mu_n=1300;//cm^2/V-s
+mu_p=500;//cm^2/V-s
+ni=1.5*10^10;//per cm^3
+T=300;//K
+rho_n=9.5;//ohm-cm
+q=1.6*10^-19;//Coulomb
+sigma_i=ni*q*(mu_n+mu_p);//(ohm-cm)^-1
+rho_i=1/sigma_i;//ohm-cm
+disp(rho_i,"Resistivity in ohm-cm : ");
+sigma_n=1/rho_n;//(ohm-cm)^-1
+ND=sigma_n/mu_n/q;//per m^3
+Ratio=ND/n;
+disp(Ratio,"Ratio of donor impurity atom to Si atom : ");
diff --git a/2198/CH1/EX1.11.8/Ex1_11_8.sce b/2198/CH1/EX1.11.8/Ex1_11_8.sce new file mode 100755 index 000000000..cbd6b58f7 --- /dev/null +++ b/2198/CH1/EX1.11.8/Ex1_11_8.sce @@ -0,0 +1,19 @@ +//Ex 1.11.8
+clc;clear;close;
+format('v',9);
+
+//Given :
+n=5*10^22;//per cm^3
+ni=1.52*10^10*10^6;//per m^3
+q=1.6*10^-19;//Coulomb
+mu_n=0.135;//m^2/V-s
+mu_p=0.048;//m^2/V-s
+impurity=1/10^8;//atoms
+sigma_i=ni*q*(mu_n+mu_p);//(ohm-cm)^-1
+rho_i=1/sigma_i;//ohm-cm
+disp(rho_i,"Resistivity of intrinsic Si in ohm-m : ");
+ND=n*impurity*10^6;//per m^3
+sigma_n=ND*mu_n*q;//(ohm-m)^-1
+rho_n=1/sigma_n;//ohm-m
+disp(rho_n,"Resistivity of doped Si in ohm-m : ");
+//Answer in the book is not accurate.
diff --git a/2198/CH1/EX1.11.9/Ex1_11_9.sce b/2198/CH1/EX1.11.9/Ex1_11_9.sce new file mode 100755 index 000000000..c26d9a5e6 --- /dev/null +++ b/2198/CH1/EX1.11.9/Ex1_11_9.sce @@ -0,0 +1,13 @@ +//Ex 1.11.9
+clc;clear;close;
+format('v',7);
+
+//Given :
+rho=9.6*10^-2;//ohm-m
+mu_n=1300*10^-4;//m^2/V-s
+sigma_n=1/rho;//(ohm-cm)^-1
+TotalAtoms=5*10^28;//per m^3
+q=1.6*10^-19;//Coulomb
+ND=sigma_n/mu_n/q;//per m^3
+ratio=ND/TotalAtoms;
+disp(ratio,"Ratio of doner atom to Si atom per unit volume : ");
diff --git a/2198/CH1/EX1.12.1/Ex1_12_1.sce b/2198/CH1/EX1.12.1/Ex1_12_1.sce new file mode 100755 index 000000000..8a01938e8 --- /dev/null +++ b/2198/CH1/EX1.12.1/Ex1_12_1.sce @@ -0,0 +1,12 @@ +//Ex 1.12.1
+clc;clear;close;
+format('v',9);
+
+//Given :
+T=27+273;//K
+ND=10^17;//per cm^3
+ni=1.5*10^10;//per cm^3
+n=ND;//per m^3//ND>>n
+disp(n,"Electron concentration per cm^3 : ");
+p=ni^2/n;//per m^3
+disp(p,"Holes per cm^3 : ");
diff --git a/2198/CH1/EX1.12.2/Ex1_12_2.sce b/2198/CH1/EX1.12.2/Ex1_12_2.sce new file mode 100755 index 000000000..81f8fb397 --- /dev/null +++ b/2198/CH1/EX1.12.2/Ex1_12_2.sce @@ -0,0 +1,12 @@ +//Ex 1.12.2
+clc;clear;close;
+format('v',9);
+
+//Given :
+Vol=4*50*1.5;//mm^3
+ni=2.4*10^19;//per m^3
+p=7.85*10^14;//per m^3
+n=ni^2/p;//per m^3
+Vol=Vol*10^-9;//m^3
+TotalElectron=n*Vol;//no. of electrons
+disp(TotalElectron,"Total free electrons per m^3 : ");
diff --git a/2198/CH1/EX1.13.1/Ex1_13_1.sce b/2198/CH1/EX1.13.1/Ex1_13_1.sce new file mode 100755 index 000000000..6f3d7cf5c --- /dev/null +++ b/2198/CH1/EX1.13.1/Ex1_13_1.sce @@ -0,0 +1,24 @@ +//Ex 1.13.1
+clc;clear;close;
+format('v',9);
+
+//Given :
+ND=10^14;//per cm^3
+NA=7*10^13;//per cm^3
+rho_i=60;//ohm-cm
+E=2;//V/cm
+q=1.6*10^-19;//Coulomb
+mu_p=1800;//cm^2/V-s
+mu_n=3800;//cm^2/V-s
+sigma_i=1/rho_i;//(ohm-cm)^-1
+ni=sigma_i/q/(mu_n+mu_p);//per cm^3
+//n=p+(ND-NA);//per cm^3
+//n*p=ni^2 implies (p+(ND-NA))*p=ni^2
+//p^2+(ND-NA)*p-ni^2=0
+m=[1 (ND-NA) -ni^2];//polynomial
+p=roots(m);//per m^3
+p=p(2);//taking only +ve value
+n=ni^2/p;//per m^3
+J=(n*mu_n+p*mu_p)*q*E/10^-4;//A/m^2
+disp(J,"Total current density(A/m^2) : ");
+//Answer in the textbook is not accurate.
diff --git a/2198/CH1/EX1.13.2/Ex1_13_2.sce b/2198/CH1/EX1.13.2/Ex1_13_2.sce new file mode 100755 index 000000000..51329eb64 --- /dev/null +++ b/2198/CH1/EX1.13.2/Ex1_13_2.sce @@ -0,0 +1,23 @@ +//Ex 1.13.2
+clc;clear;close;
+format('v',9);
+
+//Given :
+ND=10^14;//per cm^3
+NA=7*10^3;//per cm^3
+rho_i=60;//ohm-cm
+J=52;//mA/cm^2
+q=1.6*10^-19;//Coulomb
+mu_p=1800;//cm^2/V-s
+mu_n=3800;//cm^2/V-s
+sigma_i=1/rho_i;//(ohm-cm)^-1
+ni=sigma_i/q/(mu_n+mu_p);//per cm^3
+//n=p+(ND-NA);//per cm^3
+//n*p=ni^2 implies (p+(ND-NA))*p=ni^2
+//p^2+(ND-NA)*p-ni^2=0
+m=[1 (ND-NA) -ni^2];//polynomial
+p=roots(m);//per m^3
+p=p(2);//taking only +ve value
+n=ni^2/p;//per m^3
+E=J*10^-3/q/(n*mu_n+p*mu_p);//V/m
+disp(E,"Value of electrical field,E(V/cm) : ");
diff --git a/2198/CH1/EX1.13.3/Ex1_13_3.sce b/2198/CH1/EX1.13.3/Ex1_13_3.sce new file mode 100755 index 000000000..72ec4a0ef --- /dev/null +++ b/2198/CH1/EX1.13.3/Ex1_13_3.sce @@ -0,0 +1,23 @@ +//Ex 1.13.3
+clc;clear;close;
+format('v',9);
+
+//Given :
+ND=10^14;//per cm^3
+NA=7*10^13;//per cm^3
+rho_i=60;//ohm-cm
+E=2;//V/cm
+q=1.6*10^-19;//Coulomb
+mu_p=500;//cm^2/V-s
+mu_n=1300;//cm^2/V-s
+sigma_i=1/rho_i;//(ohm-cm)^-1
+ni=sigma_i/q/(mu_n+mu_p);//per cm^3
+//n=p+(ND-NA);//per cm^3
+//n*p=ni^2 implies (p+(ND-NA))*p=ni^2
+//p^2+(ND-NA)*p-ni^2=0
+m=[1 (ND-NA) -ni^2];//polynomial
+p=roots(m);//per m^3
+p=p(2);//taking only +ve value
+n=ni^2/p;//per m^3
+J=(n*mu_n+p*mu_p)*q*E/10^-4;//A/m^2
+disp(J,"Total current density(A/m^2) : ");
diff --git a/2198/CH1/EX1.13.4/Ex1_13_4.sce b/2198/CH1/EX1.13.4/Ex1_13_4.sce new file mode 100755 index 000000000..a5ff522e7 --- /dev/null +++ b/2198/CH1/EX1.13.4/Ex1_13_4.sce @@ -0,0 +1,11 @@ +//Ex 1.13.4
+clc;clear;close;
+format('v',9);
+
+//Given :
+l=6*10^-2;//m
+V=12;//volts
+v=73;//m/s
+E=V/l;//V/m
+mu=v/E;//m^2/V-s
+disp(mu,"Electron mobilitym^2/V-s) : ");
diff --git a/2198/CH1/EX1.15.1/Ex1_15_1.sce b/2198/CH1/EX1.15.1/Ex1_15_1.sce new file mode 100755 index 000000000..86eb7b415 --- /dev/null +++ b/2198/CH1/EX1.15.1/Ex1_15_1.sce @@ -0,0 +1,15 @@ +//Ex 1.15.1
+clc;clear;close;
+format('v',9);
+
+//Given :
+ND=10^13;//per cm^3
+Bz=0.2;//Wb/m^2
+d=5;//mm
+E=5;//V/cm
+q=1.6*10^-19;//Coulomb
+mu_n=1300;//cm^2/V-s
+rho=ND*q;//Coulomb/cm^3
+J=rho*mu_n*E;//A/cm^2
+VH=Bz*10^-4*J*d*10^-1/rho;//V
+disp(VH*10^3,"Magnitude of hall voltage(mV) : ");
diff --git a/2198/CH1/EX1.15.2/Ex1_15_2.sce b/2198/CH1/EX1.15.2/Ex1_15_2.sce new file mode 100755 index 000000000..0edf63199 --- /dev/null +++ b/2198/CH1/EX1.15.2/Ex1_15_2.sce @@ -0,0 +1,15 @@ +//Ex 1.15.2
+clc;clear;close;
+format('v',9);
+
+//Given :
+rho=220*10^3*10^-2;//ohm/m
+d=2.2*10^-3;//m
+w=2*10^-3;//m
+B=0.1;//Wb/m^2
+I=5*10^-6;//A
+VH=28*10^-3;//V
+sigma=1/rho;//(ohm-m)^-1
+RH=VH*w/(B*I);//ohm
+mu=sigma*RH;//m^2/V-s
+disp(mu,"Mobility(m^2/V-s) : ");
diff --git a/2198/CH1/EX1.16.1/Ex1_16_1.sce b/2198/CH1/EX1.16.1/Ex1_16_1.sce new file mode 100755 index 000000000..666b7c362 --- /dev/null +++ b/2198/CH1/EX1.16.1/Ex1_16_1.sce @@ -0,0 +1,17 @@ +//Ex 1.16.1
+clc;clear;close;
+format('v',9);
+
+//Given :
+l=4*10^-2;//m
+A=10*10^-6;//m^2
+V=1;//Volt
+I=5*10^-3;//A
+q=1.6*10^-19;//Coulomb
+mu=1300;//cm^2/V-s
+J=I/A;//A/m^2
+E=V/l;//V/m
+n=J/(q*mu*10^-4*E)
+v=mu*10^-4*E;//m/s
+disp(n,"Concentration of electron(per m^3) : ");
+disp(v,"Electron velocity(m/s) : ");
diff --git a/2198/CH1/EX1.16.2/Ex1_16_2.sce b/2198/CH1/EX1.16.2/Ex1_16_2.sce new file mode 100755 index 000000000..df2c52457 --- /dev/null +++ b/2198/CH1/EX1.16.2/Ex1_16_2.sce @@ -0,0 +1,13 @@ +//Ex 1.16.2
+clc;clear;close;
+format('v',9);
+
+//Given :
+mu_n=3800;//cm^2/V-s
+mu_p=1300;//cm^2/V-s
+ni=2.5*10^13;//per cm^3
+q=1.6*10^-19;//Coulomb
+ND=4.4*10^22/10^8;//per cm^3
+sigma_n=ND*q*mu_n;//(ohm-m)^-1
+rho_n=1/sigma_n;//ohm-cm
+disp(rho_n,"Resistivity of doped Ge(ohm-cm) : ");
diff --git a/2198/CH1/EX1.16.3/Ex1_16_3.sce b/2198/CH1/EX1.16.3/Ex1_16_3.sce new file mode 100755 index 000000000..c54176f0a --- /dev/null +++ b/2198/CH1/EX1.16.3/Ex1_16_3.sce @@ -0,0 +1,9 @@ +//Ex 1.16.3
+clc;clear;close;
+format('v',9);
+
+//Given :
+ni=1.5*10^16;//per m^3
+n=5*10^20;//per m^3
+p=ni^2/n;//per m^3
+disp(p,"Minor carrier density(per m^3) : ");
diff --git a/2198/CH1/EX1.16.4/Ex1_16_4.sce b/2198/CH1/EX1.16.4/Ex1_16_4.sce new file mode 100755 index 000000000..96d24ccba --- /dev/null +++ b/2198/CH1/EX1.16.4/Ex1_16_4.sce @@ -0,0 +1,28 @@ +//Ex 1.16.4
+clc;clear;close;
+format('v',9);
+
+//Given :
+ni=1.5*10^10;//per cm^3
+mu_n=1400;//cm^2/V-s
+mu_p=500;//cm^2/V-s
+l=1;//cm
+a=1;//mm^2
+q=1.6*10^-19;//Coulomb
+del_n=10^14;//per cm^3
+del_p=10^14;//per cm^3
+Nd=8*10^15;//per cm^3
+n=Nd;//per cm^3(Nd>>ni)
+disp(n,"Electron concentration, n(per cm^3) : ");
+p=ni^2/n;//per m^3
+disp(p,"Hole concentration, p(per cm^3) : ");
+nT=Nd+del_n;//per cm^3
+disp(nT,"Total electron concentration, nT(per cm^3) : ");
+pT=p+del_p;//per cm^3
+disp(pT,"Total hole concentration, pT(per cm^3) : ");
+sigma=(nT*mu_n+pT*mu_p)*q;//(ohm-cm)^-1
+rho=1/sigma;//ohm-cm
+R=rho*l/(a*10^-2);//ohm
+V=2;//volt
+I=V/R;//A
+disp(I*1000,"Current, I(mA) : ");
diff --git a/2198/CH1/EX1.16.5/Ex1_16_5.sce b/2198/CH1/EX1.16.5/Ex1_16_5.sce new file mode 100755 index 000000000..3e55e148a --- /dev/null +++ b/2198/CH1/EX1.16.5/Ex1_16_5.sce @@ -0,0 +1,19 @@ +//Ex 1.16.5
+clc;clear;close;
+format('v',9);
+
+//Given :
+A=2.3*10^-4;//m^2
+n=1.5*10^16;//per m^3
+l=1;//mm
+mu_n=1400;//cm^2/V-s
+mu_p=500;//cm^2/V-s
+p=n;//per m^3
+ni=n;//per m^3
+q=1.6*10^-19;//Coulomb
+sigma_i=ni*(mu_n*10^-4+mu_p*10^-4)*q;//(ohm-m)^-1
+rho_i=1/sigma_i;//ohm-m
+R=rho_i*l*10^-3/A;//ohm
+V=9;//volt
+I=V/R;//A
+disp(I*1000,"Current, I(mA) : ");
diff --git a/2198/CH1/EX1.16.6/Ex1_16_6.sce b/2198/CH1/EX1.16.6/Ex1_16_6.sce new file mode 100755 index 000000000..79dc66366 --- /dev/null +++ b/2198/CH1/EX1.16.6/Ex1_16_6.sce @@ -0,0 +1,15 @@ +//Ex 1.16.6
+clc;clear;close;
+format('v',9);
+
+//Given :
+ND=10^14;//per m^3
+Jn=10;//mA/cm^2
+E=3;//V/cm
+T=27+273;//K
+q=1.6*10^-19;//Coulomb
+mu_n=1500;//cm^2/V-s
+Dn=mu_n/39;//Diffusion constant
+n=ND;//per m^3
+dnBYdx=((Jn*10^-3/10^-4)-n*q*mu_n*E)/q/Dn;//concentration gradient
+disp(dnBYdx,"Concentration gradient, dn/dx : ");
diff --git a/2198/CH1/EX1.16.7/Ex1_16_7.sce b/2198/CH1/EX1.16.7/Ex1_16_7.sce new file mode 100755 index 000000000..8c28da157 --- /dev/null +++ b/2198/CH1/EX1.16.7/Ex1_16_7.sce @@ -0,0 +1,23 @@ +//Ex 1.16.7
+clc;clear;close;
+format('v',9);
+
+//Given :
+ND=10^13;//per m^3
+NA=10^14;//per m^3
+rho_i=44;//ohm-cm
+E=3;//V/cm
+q=1.6*10^-19;//Coulomb
+mu_n=0.38;//m^2/V-s
+mu_p=0.18;//m^2/V-s
+ni=2.5*10^19;//per m^3
+//n=p+(ND-NA);//per cm^3
+//n*p=ni^2 implies (p+(ND-NA))*p=ni^2
+//p^2+(ND-NA)*p-ni^2=0
+m=[1 (ND-NA) -ni^2];//polynomial
+p=roots(m);//per m^3
+p=p(1);//taking only +ve value
+n=ni^2/p;//per m^3
+J=(n*mu_n+p*mu_p)*q*(E/10^-2);//A/m^2
+disp(J,"Total current density(A/m^2) : ");
+//Ans in the textbook is not accurate.
diff --git a/2198/CH1/EX1.16.8/Ex1_16_8.sce b/2198/CH1/EX1.16.8/Ex1_16_8.sce new file mode 100755 index 000000000..14300bb70 --- /dev/null +++ b/2198/CH1/EX1.16.8/Ex1_16_8.sce @@ -0,0 +1,20 @@ +//Ex 1.16.8
+clc;clear;close;
+format('v',9);
+
+//Given :
+T=300;//K
+ni=2.5*10^13;//per cm^3
+mu_n=3800;//cm^2/V-s
+mu_p=1800;//cm^2/V-s
+q=1.6*10^-19;//Coulomb
+sigma_i=ni*(mu_n+mu_p)*q/10^-2;//(ohm-m)^-1
+disp(sigma_i,"Conductivity of intrinsic Ge in (ohm-m)^-1 : ");
+ND=4.4*10^22/10^7;//per cm^3
+n=ND;//per cm^3
+sigma_n=n*mu_n*q/10^-2;//(ohm-m)^-1
+disp(sigma_n,"Conductivity after adding donor impurity in (ohm-m)^-1 : ");
+NA=4.4*10^22/10^7;//per cm^3
+p=NA;//per cm^3
+sigma_p=p*mu_p*q/10^-2;//(ohm-m)^-1
+disp(sigma_p,"Conductivity after adding acceptor impurity in (ohm-m)^-1 : ");
diff --git a/2198/CH1/EX1.40.1/Ex1_40_1.sce b/2198/CH1/EX1.40.1/Ex1_40_1.sce new file mode 100755 index 000000000..aa85a9e7f --- /dev/null +++ b/2198/CH1/EX1.40.1/Ex1_40_1.sce @@ -0,0 +1,10 @@ +//Ex 1.40.1
+clc;clear;close;
+format('v',9);
+
+//Given :
+ND=10^17;//per cm^3
+ni=1.5*10^10;//per cm^3
+no=ND;//per cm^3///Nd>>ni
+po=ni^2/no;//per cm^3
+disp(po,"Equilibrium hole concentration (per cm^3) : ");
diff --git a/2198/CH1/EX1.40.10/Ex1_40_10.sce b/2198/CH1/EX1.40.10/Ex1_40_10.sce new file mode 100755 index 000000000..d6b95afd1 --- /dev/null +++ b/2198/CH1/EX1.40.10/Ex1_40_10.sce @@ -0,0 +1,12 @@ +//Ex 1.40.10
+clc;clear;close;
+format('v',9);
+
+//Given :
+rho=9.6*10^-2;//ohm-m
+mu_n=1300;//cm^2/V-s
+q=1.6*10^-19;//Coulomb
+sigma_n=1/rho;//(ohm-m)^-1
+ND=sigma_n/q/(mu_n*10^-4);//per m^3
+ni=5*10^22*10^6;//per m^3
+disp(ND/ni,"Ratio of donor atom to Si atom : ");
diff --git a/2198/CH1/EX1.40.11/Ex1_40_11.sce b/2198/CH1/EX1.40.11/Ex1_40_11.sce new file mode 100755 index 000000000..b698d23ce --- /dev/null +++ b/2198/CH1/EX1.40.11/Ex1_40_11.sce @@ -0,0 +1,10 @@ +//Ex 1.40.11
+clc;clear;close;
+format('v',9);
+
+//Given :
+ni=1.5*10^10;//per cm^3
+n_n=2.25*10^15;//per cm^3
+disp(n_n,"Equillibrium electron density(per cm^3) : ");
+p_n=ni^2/n_n;//per cm^3
+disp(p_n,"Equillibrium hole density(per cm^3) : ");
diff --git a/2198/CH1/EX1.40.12/Ex1_40_12.sce b/2198/CH1/EX1.40.12/Ex1_40_12.sce new file mode 100755 index 000000000..62527923c --- /dev/null +++ b/2198/CH1/EX1.40.12/Ex1_40_12.sce @@ -0,0 +1,9 @@ +//Ex 1.40.12
+clc;clear;close;
+format('v',9);
+
+//Given :
+NA=2*10^16;//per cm^3
+ND=10^16;//per cm^3
+p=NA-ND;//per cm^3
+disp(p,"Material is p-type & Carrier concentration(holes per cm^3) : ");
diff --git a/2198/CH1/EX1.40.13/Ex1_40_13.sce b/2198/CH1/EX1.40.13/Ex1_40_13.sce new file mode 100755 index 000000000..b2e7a8652 --- /dev/null +++ b/2198/CH1/EX1.40.13/Ex1_40_13.sce @@ -0,0 +1,9 @@ +//Ex 1.40.13
+clc;clear;close;
+format('v',9);
+
+//Given :
+del_n=10^15;//per cm^3
+tau_p=10*10^-6;//sec
+rate=del_n/tau_p;//rate of generation minority carrier
+disp(rate,"Rate of generation of minority carrier(electron hole pair/sec/cm^3) : ");
diff --git a/2198/CH1/EX1.40.14/Ex1_40_14.sce b/2198/CH1/EX1.40.14/Ex1_40_14.sce new file mode 100755 index 000000000..841a6bcf3 --- /dev/null +++ b/2198/CH1/EX1.40.14/Ex1_40_14.sce @@ -0,0 +1,9 @@ +//Ex 1.40.14
+clc;clear;close;
+format('v',9);
+
+//Given :
+E=10;//V/cm
+v=1/(20*10^-6);//m/s
+mu=v/E;//cm^2/V-s
+disp(mu,"Mobility(cm^2/V-s) : ");
diff --git a/2198/CH1/EX1.40.15/Ex1_40_15.sce b/2198/CH1/EX1.40.15/Ex1_40_15.sce new file mode 100755 index 000000000..bcf1cb27a --- /dev/null +++ b/2198/CH1/EX1.40.15/Ex1_40_15.sce @@ -0,0 +1,30 @@ +//Ex 1.40.15
+clc;clear;close;
+format('v',9);
+
+//Given :
+ND=4.5*10^15;//per cm^3
+A=1*10^-2;//cm^2
+l=10;//cm
+tau_p=1*10^-6;//sec
+tau_n=1*10^-6;//sec
+Dp=12;//cm^2/sec
+Dn=30;//cm^2/sec
+q=1.6*10^-19;//Coulomb
+del_p=10^21;//electron hole pair/cm^3/sec
+x=34.6*10^-4;//cm
+Kdash=26;//mV(Kdash is taken as K*T/q)
+ni=1.5*10^10;//per cm^3
+no=ND;//per cm^3//ND<<ni
+po=ni^2/no;//per cm^3
+ln=sqrt(Dn*tau_n);//cm
+lp=sqrt(Dp*tau_p);//cm
+dpBYdx=del_p*exp(-x/lp);//per cm^4
+dnBYdx=del_p*exp(-x/ln);//per cm^4
+Jp=-q*Dp*dpBYdx;//A/cm^2
+Ip=Jp*A;//A
+disp(Ip,"Hole diffusion current (A) : ");
+Jn=q*Dn*dnBYdx;//A/cm^2
+In=Jn*A;//A
+disp(In,"Electron diffusion current (A) : ");
+//Solution is not complete in the book and value of Jp & Jn is due to wrong calculation for dpBYdx and dnBYdx.
diff --git a/2198/CH1/EX1.40.16/Ex1_40_16.sce b/2198/CH1/EX1.40.16/Ex1_40_16.sce new file mode 100755 index 000000000..9bda625d8 --- /dev/null +++ b/2198/CH1/EX1.40.16/Ex1_40_16.sce @@ -0,0 +1,11 @@ +//Ex 1.40.16
+clc;clear;close;
+format('v',9);
+
+//Given :
+h=6.626*10^-34;//J-s
+lambda=5490;//Angstrum
+c=3*10^8;//m/s(speed of light)
+f=c/(lambda*10^-10);//Hz
+E=(h/1.6/10^-19)*f;//eV
+disp(E,"Energy band gap(eV) : ");
diff --git a/2198/CH1/EX1.40.17/Ex1_40_17.sce b/2198/CH1/EX1.40.17/Ex1_40_17.sce new file mode 100755 index 000000000..096537950 --- /dev/null +++ b/2198/CH1/EX1.40.17/Ex1_40_17.sce @@ -0,0 +1,16 @@ +//Ex 1.40.17
+clc;clear;close;
+format('v',9);
+
+//Given :
+q=1.6*10^-19;//Coulomb
+Dn=35;//cm^2/s
+x=[0 2];//micro meter
+n=[10^17 6*10^16];//per cm^3
+plot(x,n);
+title('n Vs x');
+xlabel('x(micro meter)');
+ylabel('n(electrons per cm^3)');
+dnBYdx=(n(2)-n(1))/(x(2)-x(1))/10^-4;//gradient
+Jn=q*Dn*dnBYdx;//A/cm^2
+disp(Jn,"Current density(A/cm^2) : ");
diff --git a/2198/CH1/EX1.40.18/Ex1_40_18.sce b/2198/CH1/EX1.40.18/Ex1_40_18.sce new file mode 100755 index 000000000..122743189 --- /dev/null +++ b/2198/CH1/EX1.40.18/Ex1_40_18.sce @@ -0,0 +1,14 @@ +//Ex 1.40.18
+clc;clear;close;
+format('v',9);
+
+//Given :
+q=1.6*10^-19;//Coulomb
+l=0.1;//cm
+A=100*10^-8;//cm^2
+n_n=5*10^20*10^-6;//per cm^3
+mu_n=0.13*10^4;//cm^2/V-s
+sigma_n=q*n_n*mu_n;//(ohm-cm)^-1
+rho=1/sigma_n;//ohm-cm
+R=rho*l/A;//ohm
+disp(round(R/10^6),"Resistance of the bar(Mohm) : ");
diff --git a/2198/CH1/EX1.40.19/Ex1_40_19.sce b/2198/CH1/EX1.40.19/Ex1_40_19.sce new file mode 100755 index 000000000..d50a09089 --- /dev/null +++ b/2198/CH1/EX1.40.19/Ex1_40_19.sce @@ -0,0 +1,10 @@ +//Ex 1.40.19
+clc;clear;close;
+format('v',9);
+
+//Given :
+NA=9*10^16;//per cm^3
+ND=1*10^16;//per cm^3
+w_total=3;//micro meter
+w_p=w_total*ND/NA;//micro meter
+disp(w_p,"Answer is (B). Depletion width on p-side(micro meter) : ");
diff --git a/2198/CH1/EX1.40.20/Ex1_40_20.sce b/2198/CH1/EX1.40.20/Ex1_40_20.sce new file mode 100755 index 000000000..7ccf12b61 --- /dev/null +++ b/2198/CH1/EX1.40.20/Ex1_40_20.sce @@ -0,0 +1,9 @@ +//Ex 1.40.20
+clc;clear;close;
+format('v',9);
+
+//Given :
+ni=1.5*10^16;//per m^3
+n_n=5*10^20;//per m^3
+p_n=ni^2/n_n;//per m^3
+disp(p_n,"Majority carrier density(per m^3) : ");
diff --git a/2198/CH1/EX1.40.21/Ex1_40_21.sce b/2198/CH1/EX1.40.21/Ex1_40_21.sce new file mode 100755 index 000000000..77561481f --- /dev/null +++ b/2198/CH1/EX1.40.21/Ex1_40_21.sce @@ -0,0 +1,16 @@ +//Ex 1.40.21
+clc;clear;close;
+format('v',9);
+
+//Given :
+q=1.6*10^-19;//Coulomb
+Dn=25;//cm^2/s
+x=[0 0.5];//micro meter(base width)
+n=[10^14 0];//per cm^3
+plot(x,n);
+title('n Vs x');
+xlabel('x(micro meter)');
+ylabel('n(electrons per cm^3)');
+dnBYdx=(n(2)-n(1))/(x(1)-x(2))/10^-4;//gradient
+Jn=q*Dn*dnBYdx;//A/cm^2
+disp(Jn,"Current density(A/cm^2) : ");
diff --git a/2198/CH1/EX1.40.22/Ex1_40_22.sce b/2198/CH1/EX1.40.22/Ex1_40_22.sce new file mode 100755 index 000000000..407da10e0 --- /dev/null +++ b/2198/CH1/EX1.40.22/Ex1_40_22.sce @@ -0,0 +1,10 @@ +//Ex 1.40.22
+clc;clear;close;
+format('v',9);
+
+//Given :
+h=6.64*10^-34;//planks constant
+c=3*10^8;//m/s(speed of light)
+lambda=0.87*10^-6;//m
+Eg=h*c/lambda/(1.6*10^-19);//eV
+disp(Eg,"Band gap(eV) : ");
diff --git a/2198/CH1/EX1.40.23/Ex1_40_23.sce b/2198/CH1/EX1.40.23/Ex1_40_23.sce new file mode 100755 index 000000000..67ca25afc --- /dev/null +++ b/2198/CH1/EX1.40.23/Ex1_40_23.sce @@ -0,0 +1,19 @@ +//Ex 1.40.23
+clc;clear;close;
+format('v',9);
+
+//Given :
+t=0.46*10^-4;//cm
+E=2;//eV
+alfa=5*10^4;//cm^-1
+Io=10;//mW
+q=1.6*10^-19;//Coulomb
+It=Io*exp(-alfa*t);//mW
+Pabs=Io-It;//mW
+disp(round(Pabs),"(a) Absorbed power(mW) : ");
+Eg=1.43;//eV(Band gap)
+heat_fraction=(E-Eg)/E;
+E_heat=heat_fraction*Pabs*10^-3;//J/s(energy converted to heat)
+disp(E_heat,"(b) Rate of excess thermal energy(J/s) : ");
+photons=Pabs*10^-3/q/E;//no. of photons per sec
+disp(photons,"(c) No. of photons per sec : ");
diff --git a/2198/CH1/EX1.40.24/Ex1_40_24.sce b/2198/CH1/EX1.40.24/Ex1_40_24.sce new file mode 100755 index 000000000..be0fb403c --- /dev/null +++ b/2198/CH1/EX1.40.24/Ex1_40_24.sce @@ -0,0 +1,28 @@ +//Ex 1.40.24
+clc;clear;close;
+format('v',9);
+
+//Given :
+Kdash=0.0259;//constant(taken as K*T/q)
+A=0.5;//cm^2
+Na=10^17;//per cm^3
+ni=1.5*10^10;//per cm^3
+delta_p=5*10^16;//per cm^3
+x=1000;//Angstrum
+mu_p=500;//cm^2/V-s
+tau_p=10^-10;//sec
+q=1.6*10^-19;//Coulomb
+
+Dp=Kdash*mu_p;//cm/s
+Lp=sqrt(Dp*tau_p);//cm
+p0=Na;//per cm^3
+p=p0+delta_p*exp(x*10^-8/Lp);//per cm^3
+delE1=log(p/ni)*Kdash;//eV(taken as Ei-Fp)
+Eg=1.12;//eV(Band gap)
+delE2=Eg-delE1;//eV(taken as Ec-Fp)
+disp(delE2,"Steady state separation between Fp & Ec in eV : ");
+Ip=q*A*Dp/Lp*delta_p*exp(x*10^-8/Lp);//A
+disp(Ip,"Hole current in A : ");
+Qp=q*A*delta_p*Lp;//C
+disp(Qp,"Excess stored hole charge(Coulomb)");
+//Answer in the book is wrong beacause of calculation mistake in the value of p & Ip.
diff --git a/2198/CH1/EX1.40.25/Ex1_40_25.sce b/2198/CH1/EX1.40.25/Ex1_40_25.sce new file mode 100755 index 000000000..21123862b --- /dev/null +++ b/2198/CH1/EX1.40.25/Ex1_40_25.sce @@ -0,0 +1,28 @@ +//Ex 1.40.25
+clc;clear;close;
+format('v',9);
+
+//Given :
+Kdash=0.0259;//constant(taken as K*T/q)
+A=0.5;//cm^2
+Na=10^17;//per cm^3
+ni=1.5*10^10;//per cm^3
+delta_p=5*10^16;//per cm^3
+x=1000;//Angstrum
+mu_p=500;//cm^2/V-s
+tau_p=10^-10;//sec
+q=1.6*10^-19;//Coulomb
+
+Dp=Kdash*mu_p;//cm/s
+Lp=sqrt(Dp*tau_p);//cm
+p0=Na;//per cm^3
+p=p0+delta_p*exp(x*10^-8/Lp);//per cm^3
+delE1=log(p/ni)*Kdash;//eV(taken as Ei-Fp)
+Eg=1.12;//eV(Band gap)
+delE2=Eg-delE1;//eV(taken as Ec-Fp)
+disp(delE2,"Steady state separation between Fp & Ec in eV : ");
+Ip=q*A*Dp/Lp*delta_p*exp(x*10^-8/Lp);//A
+disp(Ip,"Hole current in A : ");
+Qp=q*A*delta_p*Lp;//C
+disp(Qp,"Excess stored hole charge(Coulomb)");
+//Answer in the book is wrong beacause of calculation mistake in the value of p & Ip.
diff --git a/2198/CH1/EX1.40.3/Ex1_40_3.sce b/2198/CH1/EX1.40.3/Ex1_40_3.sce new file mode 100755 index 000000000..df292828c --- /dev/null +++ b/2198/CH1/EX1.40.3/Ex1_40_3.sce @@ -0,0 +1,12 @@ +//Ex 1.40.3
+clc;clear;close;
+format('v',9);
+
+//Given :
+ni=1.5*10^10;//per cm^3
+ND=10^17;//per cm^3
+no=ND;//per cm^3///Nd>>ni
+po=ni^2/no;//per cm^3
+KT=0.0259;//constant
+delEf=KT*log(no/ni);//eV
+disp("Fermi level, Ef = Ei+"+string(delEf)+" eV");
diff --git a/2198/CH1/EX1.40.4/Ex1_40_4.sce b/2198/CH1/EX1.40.4/Ex1_40_4.sce new file mode 100755 index 000000000..6ba1100d5 --- /dev/null +++ b/2198/CH1/EX1.40.4/Ex1_40_4.sce @@ -0,0 +1,14 @@ +//Ex 1.40.4
+clc;clear;close;
+format('v',9);
+
+//Given :
+K=1.38*10^-23;//J/K
+T=27+273;//K
+e=1.6*10^-19;//constant
+mu_n=0.17;//m^2/V-s
+mu_p=0.025;//m^2/V-s
+Dn=K*T/e*mu_n;//m^2/s
+disp(Dn,"Diffusion coffiecients of electron(m^2/s) : ");
+Dp=K*T/e*mu_p;//m^2/s
+disp(Dp,"Diffusion coffiecients of holes(m^2/s) : ");
diff --git a/2198/CH1/EX1.40.5/Ex1_40_5.sce b/2198/CH1/EX1.40.5/Ex1_40_5.sce new file mode 100755 index 000000000..3e8f5b84f --- /dev/null +++ b/2198/CH1/EX1.40.5/Ex1_40_5.sce @@ -0,0 +1,15 @@ +//Ex 1.40.5
+clc;clear;close;
+format('v',9);
+
+//Given :
+K=1.38*10^-23;//J/K
+T=27+273;//K
+e=1.6*10^-19;//constant
+del_no=10^20;//per.m^3
+tau_n=10^-7;//s
+mu_n=0.15;//m^2/V-s
+Dn=K*T/e*mu_n;//m^2/s
+Ln=sqrt(Dn*tau_n);//m
+Jn=e*Dn*del_no/Ln;//A/m^2
+disp(Jn,"Diffusion current density(A/m^2) : ");
diff --git a/2198/CH1/EX1.40.6/Ex1_40_6.sce b/2198/CH1/EX1.40.6/Ex1_40_6.sce new file mode 100755 index 000000000..fa90f9542 --- /dev/null +++ b/2198/CH1/EX1.40.6/Ex1_40_6.sce @@ -0,0 +1,13 @@ +//Ex 1.40.6
+clc;clear;close;
+format('v',9);
+
+//Given :
+sigma_n=0.1;//(ohm-cm)^-1
+mu_n=1300;//m^2/V-s
+ni=1.5*10^10;//per cm^3
+q=1.6*10^-19;//Coulomb
+n_n=sigma_n/q/mu_n;//per cm^3
+p_n=ni^2/n_n;//per cm^3
+p_n=p_n*10^6;//per m^3
+disp(p_n,"Concentration of holes(per m^3) : ");
diff --git a/2198/CH1/EX1.40.7/Ex1_40_7.sce b/2198/CH1/EX1.40.7/Ex1_40_7.sce new file mode 100755 index 000000000..a5c1a908b --- /dev/null +++ b/2198/CH1/EX1.40.7/Ex1_40_7.sce @@ -0,0 +1,15 @@ +//Ex 1.40.7
+clc;clear;close;
+format('v',9);
+
+//Given :
+L=100*10^-6;//m
+A=10^-7*10^-6;//m^2
+mu_e=0.13;//m^2/V-s
+mu_h=0.05;//m^2/V-s
+tau_h=10^-6;//sec
+V=12;//volt
+E=V/L;//v/m
+tn=L^2/(mu_e*V);//sec
+Gain=tau_h/tn*(1+mu_h/mu_e);//
+disp(Gain,"Photoconductor gain : ");
diff --git a/2198/CH1/EX1.40.8/Ex1_40_8.sce b/2198/CH1/EX1.40.8/Ex1_40_8.sce new file mode 100755 index 000000000..bbd00bb67 --- /dev/null +++ b/2198/CH1/EX1.40.8/Ex1_40_8.sce @@ -0,0 +1,20 @@ +//Ex 1.40.8
+clc;clear;close;
+format('v',7);
+
+//Given :
+T=300;//K
+rho_i=45;//ohm-cm
+//part (i)
+mu_n=3800;//cm^2/V-s
+mu_p=1800;//cm^2/V-s
+ni=2.5*10^13;//per cm^3
+q=1.6*10^-19;//Coulomb
+sigma=ni*q*(mu_n+mu_p);//(ohm-cm)^-1
+rho=1/sigma;//ohm-cm
+disp(round(rho),"Resistivity of intrinsic Ge at 300K(ohm-cm) : ");
+//part (ii)
+ND=4.4*10^22/10^8;//per cm^3
+sigma=ND*q*mu_n;//(ohm-cm)^-1
+rho=1/sigma;//ohm-cm
+disp(rho,"Resistivity of doped Ge(ohm-cm) : ");
diff --git a/2198/CH1/EX1.40.9/Ex1_40_9.sce b/2198/CH1/EX1.40.9/Ex1_40_9.sce new file mode 100755 index 000000000..f822ad95b --- /dev/null +++ b/2198/CH1/EX1.40.9/Ex1_40_9.sce @@ -0,0 +1,11 @@ +//Ex 1.40.9
+clc;clear;close;
+format('v',9);
+
+//Given :
+ni=10^16;//per m^3
+ND=10^22;//per m^3
+n=ND;//per m^3//ND>>ni
+disp(n,"Electron concentration(per m^3) : ");
+p=ni^2/n;//per m^3
+disp(p,"Electron concentration(per m^3) : ");
diff --git a/2198/CH1/EX1.5.1/Ex1_5_1.sce b/2198/CH1/EX1.5.1/Ex1_5_1.sce new file mode 100755 index 000000000..bb3a3e04d --- /dev/null +++ b/2198/CH1/EX1.5.1/Ex1_5_1.sce @@ -0,0 +1,19 @@ +//Ex 1.5.1
+clc;clear;close;
+format('v',6);
+
+//Given :
+t1=35;//degreeC
+t2=60;//degreeC
+T1=t1+273;//K
+T2=t2+273;//K
+disp("Forbidden gap for Si : ");
+EG1_Si=1.21-3.6*10^-4*T1;//eV
+disp(EG1_Si,"at 35 degree C in eV")
+EG2_Si=1.21-3.6*10^-4*T2;//eV
+disp(EG2_Si,"at 60 degree C in eV")
+disp("Forbidden gap for Ge : ");
+EG1_Ge=0.785-2.23*10^-4*T1;//eV
+disp(EG1_Ge,"at 35 degree C in eV")
+EG2_Ge=0.785-2.23*10^-4*T2;//eV
+disp(EG2_Ge,"at 60 degree C in eV")
diff --git a/2198/CH1/EX1.9.1/Ex1_9_1.sce b/2198/CH1/EX1.9.1/Ex1_9_1.sce new file mode 100755 index 000000000..2fa0b2ccc --- /dev/null +++ b/2198/CH1/EX1.9.1/Ex1_9_1.sce @@ -0,0 +1,17 @@ +//Ex 1.9.1
+clc;clear;close;
+format('v',9);
+
+//Given :
+l=6*10^-2;//m
+V=1;//Volt
+A=10*10^-6;//m^2
+I=10*10^-3;//A
+q=1.602*10^-19;//Coulomb
+mu_n=1300*10^-4;//m^2/V-s
+E=V/l;//V/m
+v=mu_n*E;//m/s
+J=I/A;//A/m^2
+n=J/(q*mu_n*E);//per m^3
+disp(n,"(i) Concentration of electron(m^3) : ");
+disp(v,"(ii) Drift velocity(m/s) : ");
diff --git a/2198/CH1/EX1.9.2/Ex1_9_2.sce b/2198/CH1/EX1.9.2/Ex1_9_2.sce new file mode 100755 index 000000000..38cecbb4d --- /dev/null +++ b/2198/CH1/EX1.9.2/Ex1_9_2.sce @@ -0,0 +1,11 @@ +//Ex 1.9.2
+clc;clear;close;
+format('v',9);
+
+//Given :
+l=6*10^-2;//m
+V=12;//Volt
+v=73;//m/s
+E=V/l;//V/m
+mu=v/E;//m^2/V-s
+disp(mu,"Electron mobility(m^2/V-s) : ");
diff --git a/2198/CH2/EX2.10.2/Ex2_10_2.sce b/2198/CH2/EX2.10.2/Ex2_10_2.sce new file mode 100755 index 000000000..e4c49a9c5 --- /dev/null +++ b/2198/CH2/EX2.10.2/Ex2_10_2.sce @@ -0,0 +1,21 @@ +//Ex 2.10.2
+clc;clear;close;
+format('v',8);
+
+//Given :
+rho_n=10;//ohm-cm
+rho_p=3.5;//ohm-cm
+ni=1.5*10^10;//per cm^3
+Vj=0.56;//volt
+q=1.6*10^-19;//Coulomb
+mu_n=1500;//cm^2/V-s
+mu_p=500;//cm^2/V-s
+sigma_p=1/rho_p;//(ohm-cm)^-1
+NA=sigma_p/q/mu_p;//per cm^3
+sigma_n=1/rho_n;//(ohm-cm)^-1
+ND=sigma_n/q/mu_n;//per cm^3
+VT=Vj/log(NA*ND/ni^2);//V
+T=11600*VT;//K
+disp(T,"Temperature of junction in degree K : ");
+t=T-273;//degree C
+disp(t,"Temperature of junction in degree C : ");
diff --git a/2198/CH2/EX2.11.1/Ex2_11_1.sce b/2198/CH2/EX2.11.1/Ex2_11_1.sce new file mode 100755 index 000000000..f6e2df5d9 --- /dev/null +++ b/2198/CH2/EX2.11.1/Ex2_11_1.sce @@ -0,0 +1,16 @@ +//Ex 2.11.1
+clc;clear;close;
+format('v',8);
+
+//Given :
+Io=10;//nA
+T1=27+273;//K
+T2=87+273;//K
+VT=T1/11600;//V
+Eta=2;//for Si
+m=1.5;//for Si
+VGO=-1.21;//volt
+K=Io*10^-9/T1^m/exp(VGO/Eta/VT);//constant
+VT=T2/11600;//V
+Io2=K*T2^m*exp(VGO/Eta/VT);//A
+disp(Io2*10^9,"Reverse saturation current at 87 degree C in nA : ");
diff --git a/2198/CH2/EX2.11.2/Ex2_11_2.sce b/2198/CH2/EX2.11.2/Ex2_11_2.sce new file mode 100755 index 000000000..05f7b1c18 --- /dev/null +++ b/2198/CH2/EX2.11.2/Ex2_11_2.sce @@ -0,0 +1,19 @@ +//Ex 2.11.2
+clc;clear;close;
+format('v',8);
+
+//Given :
+V=0.45;//volt
+Eta=2;//for Si
+T1=27+273;//K
+T2=125+273;//K
+VT1=T1/11600;//V
+VT2=T2/11600;//V
+I1BYIo1=exp(V/Eta/VT1);
+I2BYIo2=exp(V/Eta/VT2);
+m=1.5;//for Si
+VGO=1.21;//volt
+Io1BYIo2=(T1/T2)^m*exp(-VGO/Eta/VT1+VGO/Eta/VT2);//constant
+I2BYI1=I2BYIo2/I1BYIo1/Io1BYIo2;
+disp(I2BYI1,"Factor by which current increases : ");
+//Answer is wrong in the textbook.
diff --git a/2198/CH2/EX2.11.3/Ex2_11_3.sce b/2198/CH2/EX2.11.3/Ex2_11_3.sce new file mode 100755 index 000000000..370d991da --- /dev/null +++ b/2198/CH2/EX2.11.3/Ex2_11_3.sce @@ -0,0 +1,21 @@ +//Ex 2.11.3
+clc;clear;close;
+format('v',8);
+
+//Given :
+Io1=2;//nA
+T1=10+273;//K
+V=0.4;//volt
+VT1=T1/11600;//V
+m=1.5;//for Si
+Eta=2;//for Si
+VGO=-1.21;//volt
+K=Io1*10^-9/T1^m/exp(VGO/Eta/VT1);//constant
+I1=Io1*10^-9*[exp(V/Eta/VT1)-1];//nA
+T2=70+273;//K
+VT2=T2/11600;//V
+Io2=K*T2^m*[exp(VGO/Eta/VT2)];//A
+I2=Io2*[exp(V/Eta/VT2)-1];//nA
+change=(I2-I1)/I1*100;//%
+disp(change,"% change in diode current : ");
+//Answer is wrong in the textbook.
diff --git a/2198/CH2/EX2.11.4/Ex2_11_4.sce b/2198/CH2/EX2.11.4/Ex2_11_4.sce new file mode 100755 index 000000000..1aba886f3 --- /dev/null +++ b/2198/CH2/EX2.11.4/Ex2_11_4.sce @@ -0,0 +1,25 @@ +//Ex 2.11.4
+clc;clear;close;
+format('v',8);
+
+//Given :
+T=300;//K
+m_Si=1.5;//for Si
+m_Ge=1.5;//for Ge
+EGO_Si=1.21;//volt
+EGO_Ge=0.785;//volt
+Eta_Si=2;
+Eta_Ge=1;
+VT=26/1000;//V
+disp("Part(i) : ");
+d_logIoBYdt_Ge=m_Ge/T+EGO_Ge/(Eta_Ge*T*VT);//per degree C
+disp(d_logIoBYdt_Ge,"d(log(Io))/dt for Ge (per degree C) : ");
+d_logIoBYdt_Si=m_Si/T+EGO_Si/(Eta_Si*T*VT);//per degree C
+disp(d_logIoBYdt_Si,"d(log(Io))/dt for Si (per degree C) : ");
+disp("Part(ii) : ");
+V=0.2;//volt
+dVBYdt_Ge=V/T-Eta_Ge*VT*d_logIoBYdt_Ge
+disp(dVBYdt_Ge*1000,"dV/dt for Si (mV per degree C) : ");
+V=0.6;//volt
+dVBYdt_Si=V/T-Eta_Si*VT*d_logIoBYdt_Si
+disp(dVBYdt_Si*1000,"dV/dt for Si (mV per degree C) : ");
diff --git a/2198/CH2/EX2.12.1/Ex2_12_1.sce b/2198/CH2/EX2.12.1/Ex2_12_1.sce new file mode 100755 index 000000000..9a2795d20 --- /dev/null +++ b/2198/CH2/EX2.12.1/Ex2_12_1.sce @@ -0,0 +1,16 @@ +//Ex 2.12.1
+clc;clear;close;
+format('v',8);
+
+//Given :
+NA=4*10^20;//per m^3
+Vj=0.2;//volt
+V1=-1;//volts
+V2=-5;//volts
+epsilon_r=16;//for Ge
+epsilon_o=8.85*10^-12;//permitivity
+q=1.6*10^-19;//Coulomb
+W1=sqrt(2*epsilon_r*epsilon_o*(Vj-V1)/q/NA);//m
+disp(W1*10^6,"Width of depletion region(micro meter) : ");
+W2=sqrt(2*epsilon_r*epsilon_o*(Vj-V2)/q/NA);//m
+disp(W2*10^6,"New value of Width of depletion region(micro meter) : ");
diff --git a/2198/CH2/EX2.12.2/Ex2_12_2.sce b/2198/CH2/EX2.12.2/Ex2_12_2.sce new file mode 100755 index 000000000..38c41197f --- /dev/null +++ b/2198/CH2/EX2.12.2/Ex2_12_2.sce @@ -0,0 +1,19 @@ +//Ex 2.12.2
+clc;clear;close;
+format('v',8);
+
+//Given :
+NA=4*10^20;//per m^3
+Vj=0.2;//Volt
+V1=-1;//Volts
+V2=-5;//Volts
+A=0.8*10^-6;//m^2
+epsilon_r=16;//for Ge
+epsilon_o=8.85*10^-12;//permitivity
+q=1.6*10^-19;//Coulomb
+W1=sqrt(2*epsilon_r*epsilon_o*(Vj-V1)/q/NA);//m
+CT1=epsilon_r*epsilon_o*A/W1;//
+disp(CT1*10^12,"Transition capacitance(pF) : ");
+W2=sqrt(2*epsilon_r*epsilon_o*(Vj-V2)/q/NA);//m
+CT2=epsilon_r*epsilon_o*A/W2;//
+disp(CT2*10^12,"New value of Transition capacitance(pF) : ");
diff --git a/2198/CH2/EX2.12.3/Ex2_12_3.sce b/2198/CH2/EX2.12.3/Ex2_12_3.sce new file mode 100755 index 000000000..2c171cd74 --- /dev/null +++ b/2198/CH2/EX2.12.3/Ex2_12_3.sce @@ -0,0 +1,17 @@ +//Ex 2.12.3
+clc;clear;close;
+format('v',8);
+
+//Given :
+NA=3*10^20;//per m^3
+Vj=0.2;//Volt
+V=-10;//Volts
+A=1*10^-6;//m^2
+epsilon_r=16;//for Ge
+epsilon_o=8.854*10^-12;//permitivity
+q=1.6*10^-19;//Coulomb
+W=sqrt(2*epsilon_r*epsilon_o*(Vj-V)/q/NA);//m
+disp(W*10^6,"Width of depletion region(micro meter) : ");
+CT=epsilon_r*epsilon_o*A/W;//
+disp(CT*10^12,"Transition capacitance(pF) : ");
+//Answer is wrong in the textbook.
diff --git a/2198/CH2/EX2.12.4/Ex2_12_4.sce b/2198/CH2/EX2.12.4/Ex2_12_4.sce new file mode 100755 index 000000000..f560adb01 --- /dev/null +++ b/2198/CH2/EX2.12.4/Ex2_12_4.sce @@ -0,0 +1,13 @@ +//Ex 2.12.4
+clc;clear;close;
+format('v',8);
+
+//Given :
+W=2*10^-4*10^-2;//m
+A=1*10^-6;//m^2
+epsilon_r=16;//for Ge
+epsilon_o=8.854*10^-12;//permitivity
+q=1.6*10^-19;//Coulomb
+CT=epsilon_r*epsilon_o*A/W;//
+disp(CT*10^12,"Barrier capacitance(pF) : ");
+//Answer is wrong in the textbook.
diff --git a/2198/CH2/EX2.12.5/Ex2_12_5.sce b/2198/CH2/EX2.12.5/Ex2_12_5.sce new file mode 100755 index 000000000..ea2d05760 --- /dev/null +++ b/2198/CH2/EX2.12.5/Ex2_12_5.sce @@ -0,0 +1,21 @@ +//Ex 2.12.5
+clc;clear;close;
+format('v',8);
+
+//Given :
+Vj=0.5;//Volt
+V=-4.5;//Volt
+rho_p=5*10^-2;//ohm-m
+epsilon_r=12;//for Si
+epsilon_o=8.854*10^-12;//permitivity
+q=1.6*10^-19;//Coulomb
+CT=100*10^-12;//F
+mu_p=500*10^-4;//m^2/V-s
+sigma_p=1/rho_p;//(ohm-m)^-1
+NA=sigma_p/q/mu_p;//per m^3
+W=sqrt(2*epsilon_r*epsilon_o*(Vj-V)/q/NA);//m
+A=CT*W/(epsilon_r*epsilon_o);//
+r=sqrt(A/%pi);//m
+D=2*r;//m
+disp(D*10^6,"Diameter(micro meter) : ");
+//Answer is wrong in the textbook. Sqrt is not taken while calculatng W value and also other mistakes.
diff --git a/2198/CH2/EX2.12.6/Ex2_12_6.sce b/2198/CH2/EX2.12.6/Ex2_12_6.sce new file mode 100755 index 000000000..696c8771e --- /dev/null +++ b/2198/CH2/EX2.12.6/Ex2_12_6.sce @@ -0,0 +1,18 @@ +//Ex 2.12.6
+clc;clear;close;
+format('v',8);
+
+//Given :
+Eta=2;//for Si
+T=300;//K
+VT=26/1000;//V
+IbyIo=0.9;
+//part (i)
+V=log(IbyIo+1)*Eta*VT;//volt
+disp(V*1000,"Value of reverse voltage(mV) : ");
+//part (ii)
+VF=0.2;//volt
+VR=-0.2;//volt
+IFbyIR=(exp(VF/Eta/VT)-1)/(exp(VR/Eta/VT)-1)
+disp(IFbyIR,"Ratio of forward bias current to reverse saturation current : ");
+//Answer is wrong in the textbook.
diff --git a/2198/CH2/EX2.12.7/Ex2_12_7.sce b/2198/CH2/EX2.12.7/Ex2_12_7.sce new file mode 100755 index 000000000..88f7a73cb --- /dev/null +++ b/2198/CH2/EX2.12.7/Ex2_12_7.sce @@ -0,0 +1,39 @@ +//Ex 2.12.7
+clc;clear;close;
+format('v',8);
+
+//Given :
+Vs=100;//V
+Rf1=20;//ohm
+Vgamma1=0.2;//Volts
+Rf2=15;//ohm
+Vgamma2=0.6;//Volts
+Vb_Ge=0.2;//Volts
+Vb_Si=0.6;//Volts
+R1=10*10^3;//ohm
+R2=1*10^3;//ohm
+//Case(i)
+Imax=Vs/R1;//A
+//D1 ON & D2 off
+V=Vb_Ge+Rf1*Imax;//Volt
+//D2 off as V<Vb_Si
+I2=0;//A
+I1=(Vs-V)/(R1+Rf1);//A
+disp("For R=10 kohm : ");
+disp(I1*1000,"I1(mA)=");
+disp(I2,"I2(mA)=");
+//Case(ii)
+R=R2;//ohm//D1 & D2 ON
+//V=Vb_Ge+Rf1*I1//V=Vb_Si+Rf2*I2
+///V=Vs-I*R//V=Vs-(I1+I2)*R
+//20*I1-15*I2=Vb_Si-Vb_Ge
+//1020*I1+1000*I2=99.8
+A=[20 1020;-Rf2 R];
+B=[Vb_Ge-Vb_Ge Vs-Vb_Ge ];
+X=B*A^-1;//
+I1=X(1)*1000;//mA
+I2=X(2)*1000;//mA
+disp("For R=1 kohm : ");
+disp(I1,"I1(mA)=");
+disp(I2,"I2(mA)=");
+//Answer for 2nd part is not accurate in the book.
diff --git a/2198/CH2/EX2.12.8/Ex2_12_8.sce b/2198/CH2/EX2.12.8/Ex2_12_8.sce new file mode 100755 index 000000000..6695075cd --- /dev/null +++ b/2198/CH2/EX2.12.8/Ex2_12_8.sce @@ -0,0 +1,19 @@ +//Ex 2.12.8
+clc;clear;close;
+format('v',8);
+
+//Given :
+Rf=10;//ohm
+Vgamma=0.5;//Volt
+RL=20;//ohm
+V=3;//Volt
+//Loop 1: 75*I1-50*I=V-Vgamma
+//Loop 2: -50*I1+80*I=-Vgamma
+A=[75 -50;-50 80];
+B=[V-Vgamma -Vgamma];
+X=B*A^-1;
+I1=X(1);//A
+I=X(2);//A
+Vx=-Vgamma+50*I1;//Volt
+disp(Vx,"DC source(Volts) : ");
+//Answer is wrong in the textbook.
diff --git a/2198/CH2/EX2.6.1/Ex2_6_1.sce b/2198/CH2/EX2.6.1/Ex2_6_1.sce new file mode 100755 index 000000000..21b7e24d4 --- /dev/null +++ b/2198/CH2/EX2.6.1/Ex2_6_1.sce @@ -0,0 +1,14 @@ +//Ex 2.6.1
+clc;clear;close;
+format('v',6);
+
+//Given :
+Ge=4.4*10^22;//atoms/cm^3
+NA=Ge/10^8;//per cm^3
+NA=NA*10^6;//per m^3
+ND=NA*10^3;//per m^3
+ni=2.5*10^13;//per cm^3
+ni=ni*10^6;//per m^3
+VT=26;//mV
+Vj=VT*log(NA*ND/ni^2);//mV
+disp(Vj,"Junction potential in mV : ");
diff --git a/2198/CH2/EX2.6.2/Ex2_6_2.sce b/2198/CH2/EX2.6.2/Ex2_6_2.sce new file mode 100755 index 000000000..f5876e529 --- /dev/null +++ b/2198/CH2/EX2.6.2/Ex2_6_2.sce @@ -0,0 +1,15 @@ +//Ex 2.6.2
+clc;clear;close;
+format('v',6);
+
+//Given :
+ni=2.5*10^15;//per cm^3
+Ge=4.4*10^22;//atoms/cm^3
+NA=Ge/10^8;//per cm^3
+NA=NA*10^6;//per m^3
+ND=NA*10^3;//per m^3
+ni=ni*10^6;//per m^3
+T=27+273;//K
+VT=T/11600;//V
+Vo=VT*log(NA*ND/ni^2);//V
+disp(Vo,"Contact potential in V : ");
diff --git a/2198/CH2/EX2.6.3/Ex2_6_3.sce b/2198/CH2/EX2.6.3/Ex2_6_3.sce new file mode 100755 index 000000000..460b908b1 --- /dev/null +++ b/2198/CH2/EX2.6.3/Ex2_6_3.sce @@ -0,0 +1,21 @@ +//Ex 2.6.3
+clc;clear;close;
+format('v',6);
+
+//Given :
+mu_n=1500*10^-4;//m^2/V-s
+mu_p=475*10^-4;//m^2/V-s
+ni=1.45*10^10*10^6;//per m^3
+q=1.6*10^-19;//Coulomb
+rho_p=10;//ohm-cm
+rho_p=rho_p*10^-2;//ohm-m
+rho_n=3.5;//ohm-cm
+rho_n=rho_n*10^-2;//ohm-m
+sigma_p=1/rho_p;//(ohm-m)^-1
+NA=sigma_p/q/mu_p;//m^3
+sigma_n=1/rho_n;//(ohm-m)^-1
+ND=sigma_p/q/mu_n;//m^3
+VT=26*10^-3;//V
+Vj=VT*log(NA*ND/ni^2);//V
+disp(Vj,"Height of potential barrier in V : ");
+//Anser in the book is wrong.
diff --git a/2198/CH2/EX2.6.4/Ex2_6_4.sce b/2198/CH2/EX2.6.4/Ex2_6_4.sce new file mode 100755 index 000000000..57268b838 --- /dev/null +++ b/2198/CH2/EX2.6.4/Ex2_6_4.sce @@ -0,0 +1,22 @@ +//Ex 2.6.4
+clc;clear;close;
+format('v',6);
+
+//Given :
+rho_p=2;//ohm-cm
+rho_p=rho_p*10^-2;//ohm-m
+rho_n=1;//ohm-cm
+rho_n=rho_n*10^-2;//ohm-m
+mu_n=1500*10^-4;//m^2/V-s
+mu_p=2100*10^-4;//m^2/V-s
+ni=2.5*10^13;//per m^3
+q=1.6*10^-19;//Coulomb
+sigma_p=1/rho_p;//(ohm-m)^-1
+NA=sigma_p/q/mu_p;//m^3
+sigma_n=1/rho_n;//(ohm-m)^-1
+ND=sigma_p/q/mu_n;//m^3
+T=27+273;//K
+VT=T/11600;//V
+Vj=VT*log(NA*ND/ni^2);//V
+disp(Vj,"Height of potential barrier in V : ");
+//Anser in the book is wrong.
diff --git a/2198/CH2/EX2.7.1/Ex2_7_1.sce b/2198/CH2/EX2.7.1/Ex2_7_1.sce new file mode 100755 index 000000000..ba3bca495 --- /dev/null +++ b/2198/CH2/EX2.7.1/Ex2_7_1.sce @@ -0,0 +1,13 @@ +//Ex 2.7.1
+clc;clear;close;
+format('v',6);
+
+//Given :
+Vgamma=0.6;//volt
+rf=12;//ohm
+V=5;//volts
+R=1;//kohm
+IF=(V-Vgamma)/(R*1000+rf);//A
+disp(IF*1000,"Diode current in mA :");
+VF=Vgamma+IF*rf;//volts
+disp(VF,"Diode voltage in volts :");
diff --git a/2198/CH2/EX2.7.2/Ex2_7_2.sce b/2198/CH2/EX2.7.2/Ex2_7_2.sce new file mode 100755 index 000000000..ea6c22a96 --- /dev/null +++ b/2198/CH2/EX2.7.2/Ex2_7_2.sce @@ -0,0 +1,17 @@ +//Ex 2.7.2
+clc;clear;close;
+format('v',7);
+
+//Given :
+Vgamma=0.6;//volt
+Rf=10;//ohm
+Eta=2;
+Vm=0.2;//volts
+Vdc=10;//volts
+RL=1;//kohm
+IDQ=(Vdc-Vgamma)/(RL*1000+Rf);//A
+VT=25*10^-3;//volts
+rd=Eta*VT/IDQ;//ohm
+disp("Alternating component of voltage across RL, Vo(ac) = "+string(RL*1000/(RL*1000+rd)*Vm)+"*sin(omega*t)");
+Vo_DC=IDQ*RL*1000;//volts
+disp("Total load voltage = "+string(Vo_DC)+"+"+string(RL*1000/(RL*1000+rd)*Vm)+"*sin(omega*t)");
diff --git a/2198/CH2/EX2.7.3/Ex2_7_3.sce b/2198/CH2/EX2.7.3/Ex2_7_3.sce new file mode 100755 index 000000000..724d89b9c --- /dev/null +++ b/2198/CH2/EX2.7.3/Ex2_7_3.sce @@ -0,0 +1,17 @@ +//Ex 2.7.3
+clc;clear;close;
+format('v',8);
+
+//Given :
+Eta=2;//for Si diode
+T=300;//K
+VT=T/11600;//V
+IbyIo=90/100;
+//I=Io*(exp(V/Eta/VT)-1)
+V=log(IbyIo+1)*Eta*VT;//V
+disp(V*1000,"Saturation value of voltage in mV : ");
+VF=0.5;//volts
+VR=-0.5;//volts
+IFbyIR=(exp(VF/Eta/VT)-1)/(exp(VR/Eta/VT)-1);//ratio
+disp(IFbyIR,"Ratio of forward to reverse current : ");
+//Answer in the book is wrong.
diff --git a/2198/CH2/EX2.7.4/Ex2_7_4.sce b/2198/CH2/EX2.7.4/Ex2_7_4.sce new file mode 100755 index 000000000..0c81a0fea --- /dev/null +++ b/2198/CH2/EX2.7.4/Ex2_7_4.sce @@ -0,0 +1,17 @@ +//Ex 2.7.4
+clc;clear;close;
+format('v',8);
+
+//Given :
+Eta=2;//for Si diode
+T=300;//K
+VT=T/11600;//V
+IbyIo=90/100;
+//I=Io*(exp(V/Eta/VT)-1)
+V=log(IbyIo+1)*Eta*VT;//V
+disp(V*1000,"Saturation value of voltage in mV : ");
+VF=0.2;//volts
+VR=-0.2;//volts
+IFbyIR=(exp(VF/Eta/VT)-1)/(exp(VR/Eta/VT)-1);//ratio
+disp(IFbyIR,"Ratio of forward to reverse current : ");
+//Answer in the book is wrong.
diff --git a/2198/CH2/EX2.9.1/Ex2_9_1.sce b/2198/CH2/EX2.9.1/Ex2_9_1.sce new file mode 100755 index 000000000..2faaf9755 --- /dev/null +++ b/2198/CH2/EX2.9.1/Ex2_9_1.sce @@ -0,0 +1,12 @@ +//Ex 2.9.1
+clc;clear;close;
+format('v',6);
+
+//Given :
+IF=10;//mA
+VF=0.75;//volts
+T=27+273;//K
+Eta=2;//for Si diode
+VT=T/11600;//V
+Io=IF/(exp(VF/Eta/VT)-1);//mA
+disp(Io*10^6,"Reverse saturation current in nA : ");
diff --git a/2198/CH2/EX2.9.2/Ex2_9_2.sce b/2198/CH2/EX2.9.2/Ex2_9_2.sce new file mode 100755 index 000000000..8c882f782 --- /dev/null +++ b/2198/CH2/EX2.9.2/Ex2_9_2.sce @@ -0,0 +1,12 @@ +//Ex 2.9.2
+clc;clear;close;
+format('v',6);
+
+//Given :
+IF=10;//mA
+VF=0.3;//volts
+T=27+273;//K
+Eta=1;//for Ge diode
+VT=T/11600;//V
+Io=IF/(exp(VF/Eta/VT)-1);//mA
+disp(Io*10^6,"Reverse saturation current in nA : ");
diff --git a/2198/CH2/EX2.9.3/Ex2_9_3.sce b/2198/CH2/EX2.9.3/Ex2_9_3.sce new file mode 100755 index 000000000..241836c17 --- /dev/null +++ b/2198/CH2/EX2.9.3/Ex2_9_3.sce @@ -0,0 +1,12 @@ +//Ex 2.9.3
+clc;clear;close;
+format('v',6);
+
+//Given :
+Io=1*10^-9;//A
+T=27+273;//K
+VT=T/11600;//V
+VF=0.3;//volts
+Eta=1;//for Ge diode
+IF=Io*(exp(VF/Eta/VT)-1);//mA
+disp(IF*10^3,"Forwad current in mA : ");
diff --git a/2198/CH2/EX2.9.4/Ex2_9_4.sce b/2198/CH2/EX2.9.4/Ex2_9_4.sce new file mode 100755 index 000000000..cfd7c6f28 --- /dev/null +++ b/2198/CH2/EX2.9.4/Ex2_9_4.sce @@ -0,0 +1,16 @@ +//Ex 2.9.4
+clc;clear;close;
+format('v',8);
+
+//Given :
+T=27+273;//K
+V1=0.4;//V
+V2=0.42;//V
+I1=10;//mA
+I2=20;//mA
+VT=T/11600;//V
+Eta=1/log(I1/I2)*(V1-V2)/VT
+disp(Eta,"Value of Eta : ");
+Io=I1/(exp(V1/Eta/VT)-1)*10^-3;//A
+disp(Io*10^9,"Current, Io in nA : ");
+//Ans in the book is not accurate.
diff --git a/2198/CH2/EX2.9.5/Ex2_9_5.sce b/2198/CH2/EX2.9.5/Ex2_9_5.sce new file mode 100755 index 000000000..3284fb172 --- /dev/null +++ b/2198/CH2/EX2.9.5/Ex2_9_5.sce @@ -0,0 +1,15 @@ +//Ex 2.9.5
+clc;clear;close;
+format('v',8);
+
+//Given :
+Io1=10^-12;//A
+Io2=10^-10;//A
+I=2;//mA
+Eta=1;//constant
+T=27+273;//K
+VT=26/1000;//V
+//I=I1+I2
+V=(log(I*10^-3/(Io1+Io2))+1)*Eta*VT;//V
+disp(V,"Voltage across the diodes in V : ");
+//Ans in the book is not accurate.
diff --git a/2198/CH2/EX2.9.6/Ex2_9_6.sce b/2198/CH2/EX2.9.6/Ex2_9_6.sce new file mode 100755 index 000000000..ca35fae3c --- /dev/null +++ b/2198/CH2/EX2.9.6/Ex2_9_6.sce @@ -0,0 +1,15 @@ +//Ex 2.9.6
+clc;clear;close;
+format('v',8);
+
+//Given :
+Io1=10*10^-9;//A
+Io2=10*10^-9;//A
+Eta=1.1;//constant
+T=25+273;//K
+V=0.2;//V(assumed)
+VT=T/11600;//V
+I1=Io1*(exp(V/Eta/VT)-1);//A
+I2=Io2*(exp(V/Eta/VT)-1);//A
+I=I1+I2;//A
+disp(I*10^6,"Source current in micro Ampere : ");
diff --git a/2198/CH2/EX2.9.7/Ex2_9_7.sce b/2198/CH2/EX2.9.7/Ex2_9_7.sce new file mode 100755 index 000000000..50c20a4be --- /dev/null +++ b/2198/CH2/EX2.9.7/Ex2_9_7.sce @@ -0,0 +1,18 @@ +//Ex 2.9.7
+clc;clear;close;
+format('v',8);
+
+//Given :
+Io=10^-13;//A
+T=27+273;//K
+Eta=1;//constant
+V=0.6;//V
+VT=26/1000;//V
+I3=Io*(exp(V/Eta/VT)-1);//A
+R=1*1000;//ohm
+Ir=V/R;//A
+Itotal=I3+Ir;//A
+VD1=log(Itotal/Io)*Eta*VT;//V
+VD2=VD1;//V
+Vin=VD1+VD2+V;//V
+disp(Vin,"Voltage Vin(V) : ");
diff --git a/2198/CH2/EX2.9.8/Ex2_9_8.sce b/2198/CH2/EX2.9.8/Ex2_9_8.sce new file mode 100755 index 000000000..84a6d5fb9 --- /dev/null +++ b/2198/CH2/EX2.9.8/Ex2_9_8.sce @@ -0,0 +1,24 @@ +//Ex 2.9.8
+clc;clear;close;
+format('v',8);
+
+//Given :
+Vs=10;//V
+disp("Case(i) : Vb=9.8V");
+Vb=9.8;//V
+//D1 forward & D2 reverse biased: Breakdown D2
+VD2=Vb;//V
+VD1=Vs-Vb;//V
+disp(VD1,"VD1(V) : ");
+disp(VD2,"VD2(V) : ");
+disp("Case(ii) : Vb=10.2V");
+Vb=10.2;//V
+//D1 forward & D2 reverse biased: none will be breakdown
+VD2=Vb;//V
+//I=I0 so exp(V1/Eta/VT)-1=1
+Eta=1;//constant
+VT=26/1000;//V
+VD1=log(1+1)*Eta*VT;//V
+VD2=Vs-VD1;//V
+disp(VD1,"VD1(V) : ");
+disp(VD2,"VD2(V) : ");
diff --git a/2198/CH2/EX2.9.9/Ex2_9_9.sce b/2198/CH2/EX2.9.9/Ex2_9_9.sce new file mode 100755 index 000000000..8b352d255 --- /dev/null +++ b/2198/CH2/EX2.9.9/Ex2_9_9.sce @@ -0,0 +1,13 @@ +//Ex 2.9.9
+clc;clear;close;
+format('v',8);
+
+//Given :
+Vs=5;//Volt
+Eta=1;//constant
+VT=26/1000;//V
+//I=I0 so exp(V1/Eta/VT)-1=1
+V1=log(1+1)*Eta*VT;//Volt
+V2=Vs-V1;//volt
+disp(V1,"Voltage across diode D1 in V : ");
+disp(V2,"Voltage across diode D2 in V : ");
diff --git a/2198/CH5/EX5.6.1/Ex5_6_1.sce b/2198/CH5/EX5.6.1/Ex5_6_1.sce new file mode 100755 index 000000000..9b9fe1cb9 --- /dev/null +++ b/2198/CH5/EX5.6.1/Ex5_6_1.sce @@ -0,0 +1,17 @@ +//Ex 5.6.1
+clc;clear;close;
+format('v',6);
+
+//Given :
+VTN=0.7;//V
+W=45;//micro m
+L=4;//micro m
+mu_n=700;//cm^2/V-s
+t_ox=450;//Angstrum
+epsilon_ox=3.9*8.85*10^-14;//F/cm
+VGS=2*VTN;//V
+Kn=(W*10^-4)*mu_n*epsilon_ox/(2*(L*10^-4)*(t_ox*10^-8));//A/V^2
+Kn=Kn*10^3;//mA/V^2
+ID=Kn*(VGS-VTN)^2;//A
+disp(ID,"Current in mA : ");
+//Answer is wrong in the book. Calculation mistake whle calculating value for Kn.
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