initial commit / add all books

86 files changed, 1420 insertions, 0 deletions

diff --git a/2198/CH1/EX1.10.1/Ex1_10_1.sce b/2198/CH1/EX1.10.1/Ex1_10_1.sce
new file mode 100755
index 000000000..43c1e60c1
--- /dev/null
+++ b/2198/CH1/EX1.10.1/Ex1_10_1.sce
@@ -0,0 +1,17 @@
+//Ex 1.10.1

+clc;clear;close;

+format('v',9);

+

+//Given : 

+l=4*10^-2;//m

+A=10*10^-6;//m^2

+V=1;//Volt

+I=5*10^-3;//A

+q=1.6*10^-19;//Coulomb

+mu=1300;//cm^2/V-s

+J=I/A;//A/m^2

+E=V/l;//V/m

+n=J/(q*mu*10^-4*E);

+v=mu*10^-4*E;//m/s

+disp(n,"Concentration of electron(per m^3) : ");

+disp(v,"Electron velocity(m/s) : ");

diff --git a/2198/CH1/EX1.11.1/Ex1_11_1.sce b/2198/CH1/EX1.11.1/Ex1_11_1.sce
new file mode 100755
index 000000000..27ff0af4e
--- /dev/null
+++ b/2198/CH1/EX1.11.1/Ex1_11_1.sce
@@ -0,0 +1,13 @@
+//Ex 1.11.1

+clc;clear;close;

+format('v',9);

+

+//Given : 

+ni=1.5*10^10/10^-6;//per m^3

+mu_n=1800*10^-4;//m^2/V-s

+mu_p=500*10^-4;//m^2/V-s

+q=1.6*10^-19;//Coulomb

+sigma_i=ni*(mu_n+mu_p)*q;//(ohm-m)^-1

+disp(sigma_i,"Conductivity in (ohm-m)^-1 : ");

+rho_i=1/sigma_i;//ohm-m

+disp(rho_i,"Resistivity in ohm-m : ");

diff --git a/2198/CH1/EX1.11.10/Ex1_11_10.sce b/2198/CH1/EX1.11.10/Ex1_11_10.sce
new file mode 100755
index 000000000..6cc00a179
--- /dev/null
+++ b/2198/CH1/EX1.11.10/Ex1_11_10.sce
@@ -0,0 +1,12 @@
+//Ex 1.11.10

+clc;clear;close;

+format('v',9);

+

+//Given : 

+ni=2.5*10^13;//per cm^3

+mu_p=1800;//cm^2/V-s

+mu_n=3800;//cm^2/V-s

+q=1.6*10^-19;//Coulomb

+sigma_i=ni*q*(mu_n+mu_p);//(ohm-cm)^-1

+rho_i=1/sigma_i;//ohm-cm

+disp(round(rho_i),"Resistivity of Ge(ohm-cm) : ");

diff --git a/2198/CH1/EX1.11.11/Ex1_11_11.sce b/2198/CH1/EX1.11.11/Ex1_11_11.sce
new file mode 100755
index 000000000..7b6aa76f8
--- /dev/null
+++ b/2198/CH1/EX1.11.11/Ex1_11_11.sce
@@ -0,0 +1,14 @@
+//Ex 1.11.11

+clc;clear;close;

+format('v',9);

+

+//Given : 

+ni=1.2*10^16;//per m^3

+p=10^22;//per m^3

+mu_p=500*10^-4;//cm^2/V-s

+mu_n=1350*10^-4;//cm^2/V-s

+q=1.6*10^-19;//Coulomb

+n=ni^2/p;//per m^3

+disp(n,"Electron concentration per m^3 : ");

+sigma=q*(n*mu_n+p*mu_p);//(ohm-m)^-1

+disp(sigma,"Conductivity of Si(ohm-m)^-1 : ");

diff --git a/2198/CH1/EX1.11.2/Ex1_11_2.sce b/2198/CH1/EX1.11.2/Ex1_11_2.sce
new file mode 100755
index 000000000..94c688621
--- /dev/null
+++ b/2198/CH1/EX1.11.2/Ex1_11_2.sce
@@ -0,0 +1,11 @@
+//Ex 1.11.2

+clc;clear;close;

+format('v',9);

+

+//Given : 

+T=300;//K

+Ao=2.735*10^31;//constant for Si

+k=86*10^-6;//boltzman constant

+EGO=1.1;//volt(Bandgap energy)

+ni=sqrt(Ao*T^3*exp(-EGO/k/T));//per cm^3

+disp(ni,"Intrinsic carrier concentration per cm^3 : ");

diff --git a/2198/CH1/EX1.11.3/Ex1_11_3.sce b/2198/CH1/EX1.11.3/Ex1_11_3.sce
new file mode 100755
index 000000000..bf98455bb
--- /dev/null
+++ b/2198/CH1/EX1.11.3/Ex1_11_3.sce
@@ -0,0 +1,19 @@
+//Ex 1.11.3

+clc;clear;close;

+format('v',9);

+

+//Given : 

+A=1*10^-6;//m^2

+R=3.6*10^-4/10^-2;//ohm/m

+n=9*10^26;//electrons/m^3

+J=3*10^6;//A/m^2

+q=1.6*10^-19;//Coulomb

+I=J*A;//A

+disp(I,"(i) Current in A : ");

+rho=R*A;//ohm-m

+sigma=1/rho;//(ohm-m)^-1

+disp(sigma,"(ii) Conductivity in (ohm-m)^-1");

+v=J/n/q;//m/s

+disp(v,"(iii) velocity of free electrons in m/s : ");

+mu=sigma/n/q;//m^2/V-s

+disp(mu,"(iv) Mobility in m^2/V-s ; ");

diff --git a/2198/CH1/EX1.11.4/Ex1_11_4.sce b/2198/CH1/EX1.11.4/Ex1_11_4.sce
new file mode 100755
index 000000000..06aee80cb
--- /dev/null
+++ b/2198/CH1/EX1.11.4/Ex1_11_4.sce
@@ -0,0 +1,19 @@
+//Ex 1.11.4

+clc;clear;close;

+format('v',9);

+

+//Given : 

+rho=3*10^5*10^-2;//ohm-m

+T1=30+273;//K

+mu_n=0.13;//m^2/V-s

+mu_p=0.05;//m^2/V-s

+q=1.6*10^-19;//Coulomb

+T2=100+273;//K

+sigma_i=1/rho;//(ohm-m)^-1

+ni1=sigma_i/q/(mu_n+mu_p);//electrons/m^3

+disp(ni1,"Intrinsic concentration at 30 degree C(per m^3) : ");

+k=8.62*10^-5;//eV/K(Boltzman constant)

+EGO=1.21;//V(Energy band gap)

+Ao=ni1^2/(T1^3*exp(-EGO/k/T1));//constant

+ni2=sqrt(Ao*T2^3*exp(-EGO/k/T2));//per cm^3

+disp(ni2,"Intrinsic concentration at 100 degree C(per m^3) : ");

diff --git a/2198/CH1/EX1.11.5/Ex1_11_5.sce b/2198/CH1/EX1.11.5/Ex1_11_5.sce
new file mode 100755
index 000000000..d547687eb
--- /dev/null
+++ b/2198/CH1/EX1.11.5/Ex1_11_5.sce
@@ -0,0 +1,16 @@
+//Ex 1.11.5

+clc;clear;close;

+format('v',9);

+

+//Given : 

+l=0.1*10^-2;//m

+R=1.5*10^3;//ohm

+mu_n=0.14;//m^2/V-s

+mu_p=0.05;//m^2/V-s

+A=8*10^-8;//m^2

+ni=1.5*10^10*10^6;// per m^3

+q=1.6*10^-19;//Coulomb

+rho_n=R*A/l;//ohm-m

+sigma_n=1/rho_n;//(ohm-m)^-1

+ND=sigma_n/mu_n/q;//

+disp(ND,"Majority Carrier density(per m^3) : ");

diff --git a/2198/CH1/EX1.11.6/Ex1_11_6.sce b/2198/CH1/EX1.11.6/Ex1_11_6.sce
new file mode 100755
index 000000000..4b8550f77
--- /dev/null
+++ b/2198/CH1/EX1.11.6/Ex1_11_6.sce
@@ -0,0 +1,18 @@
+//Ex 1.11.6

+clc;clear;close;

+format('v',9);

+

+//Given : 

+A=2.5*10^-4;//m^2

+n=1.5*10^16;//per m^3

+q=1.6*10^-19;//Coulomb

+mu_n=0.14;//m^2/V-s

+mu_p=0.05;//m^2/V-s

+I=1.2*10^-3;//A

+V=9;//Volts

+ni=n;// per m^3

+sigma_i=ni*q*(mu_n+mu_p);//(ohm-m)^-1

+rho_i=1/sigma_i;//ohm-m

+R=V/I;//ohm

+l=R*A/rho_i;//m

+disp(l*1000,"Length of the bar(mm) : ");

diff --git a/2198/CH1/EX1.11.7/Ex1_11_7.sce b/2198/CH1/EX1.11.7/Ex1_11_7.sce
new file mode 100755
index 000000000..a47e34e58
--- /dev/null
+++ b/2198/CH1/EX1.11.7/Ex1_11_7.sce
@@ -0,0 +1,19 @@
+//Ex 1.11.7

+clc;clear;close;

+format('v',8);

+

+//Given : 

+n=5*10^22;//per cm^3

+mu_n=1300;//cm^2/V-s

+mu_p=500;//cm^2/V-s

+ni=1.5*10^10;//per cm^3

+T=300;//K

+rho_n=9.5;//ohm-cm

+q=1.6*10^-19;//Coulomb

+sigma_i=ni*q*(mu_n+mu_p);//(ohm-cm)^-1

+rho_i=1/sigma_i;//ohm-cm

+disp(rho_i,"Resistivity in ohm-cm : ");

+sigma_n=1/rho_n;//(ohm-cm)^-1

+ND=sigma_n/mu_n/q;//per m^3

+Ratio=ND/n;

+disp(Ratio,"Ratio of donor impurity atom to Si atom : ");

diff --git a/2198/CH1/EX1.11.8/Ex1_11_8.sce b/2198/CH1/EX1.11.8/Ex1_11_8.sce
new file mode 100755
index 000000000..cbd6b58f7
--- /dev/null
+++ b/2198/CH1/EX1.11.8/Ex1_11_8.sce
@@ -0,0 +1,19 @@
+//Ex 1.11.8

+clc;clear;close;

+format('v',9);

+

+//Given : 

+n=5*10^22;//per cm^3

+ni=1.52*10^10*10^6;//per m^3

+q=1.6*10^-19;//Coulomb

+mu_n=0.135;//m^2/V-s

+mu_p=0.048;//m^2/V-s

+impurity=1/10^8;//atoms

+sigma_i=ni*q*(mu_n+mu_p);//(ohm-cm)^-1

+rho_i=1/sigma_i;//ohm-cm

+disp(rho_i,"Resistivity of intrinsic Si in ohm-m : ");

+ND=n*impurity*10^6;//per m^3

+sigma_n=ND*mu_n*q;//(ohm-m)^-1

+rho_n=1/sigma_n;//ohm-m

+disp(rho_n,"Resistivity of doped Si in ohm-m : ");

+//Answer in the book is not accurate.

diff --git a/2198/CH1/EX1.11.9/Ex1_11_9.sce b/2198/CH1/EX1.11.9/Ex1_11_9.sce
new file mode 100755
index 000000000..c26d9a5e6
--- /dev/null
+++ b/2198/CH1/EX1.11.9/Ex1_11_9.sce
@@ -0,0 +1,13 @@
+//Ex 1.11.9

+clc;clear;close;

+format('v',7);

+

+//Given : 

+rho=9.6*10^-2;//ohm-m

+mu_n=1300*10^-4;//m^2/V-s

+sigma_n=1/rho;//(ohm-cm)^-1

+TotalAtoms=5*10^28;//per m^3

+q=1.6*10^-19;//Coulomb

+ND=sigma_n/mu_n/q;//per m^3

+ratio=ND/TotalAtoms;

+disp(ratio,"Ratio of doner atom to Si atom per unit volume : ");

diff --git a/2198/CH1/EX1.12.1/Ex1_12_1.sce b/2198/CH1/EX1.12.1/Ex1_12_1.sce
new file mode 100755
index 000000000..8a01938e8
--- /dev/null
+++ b/2198/CH1/EX1.12.1/Ex1_12_1.sce
@@ -0,0 +1,12 @@
+//Ex 1.12.1

+clc;clear;close;

+format('v',9);

+

+//Given : 

+T=27+273;//K

+ND=10^17;//per cm^3

+ni=1.5*10^10;//per cm^3

+n=ND;//per m^3//ND>>n

+disp(n,"Electron concentration per cm^3 : ");

+p=ni^2/n;//per m^3

+disp(p,"Holes per cm^3 : ");

diff --git a/2198/CH1/EX1.12.2/Ex1_12_2.sce b/2198/CH1/EX1.12.2/Ex1_12_2.sce
new file mode 100755
index 000000000..81f8fb397
--- /dev/null
+++ b/2198/CH1/EX1.12.2/Ex1_12_2.sce
@@ -0,0 +1,12 @@
+//Ex 1.12.2

+clc;clear;close;

+format('v',9);

+

+//Given : 

+Vol=4*50*1.5;//mm^3

+ni=2.4*10^19;//per m^3

+p=7.85*10^14;//per m^3

+n=ni^2/p;//per m^3

+Vol=Vol*10^-9;//m^3

+TotalElectron=n*Vol;//no. of electrons

+disp(TotalElectron,"Total free electrons per m^3 : ");

diff --git a/2198/CH1/EX1.13.1/Ex1_13_1.sce b/2198/CH1/EX1.13.1/Ex1_13_1.sce
new file mode 100755
index 000000000..6f3d7cf5c
--- /dev/null
+++ b/2198/CH1/EX1.13.1/Ex1_13_1.sce
@@ -0,0 +1,24 @@
+//Ex 1.13.1

+clc;clear;close;

+format('v',9);

+

+//Given : 

+ND=10^14;//per cm^3

+NA=7*10^13;//per cm^3

+rho_i=60;//ohm-cm

+E=2;//V/cm

+q=1.6*10^-19;//Coulomb

+mu_p=1800;//cm^2/V-s

+mu_n=3800;//cm^2/V-s

+sigma_i=1/rho_i;//(ohm-cm)^-1

+ni=sigma_i/q/(mu_n+mu_p);//per cm^3

+//n=p+(ND-NA);//per cm^3

+//n*p=ni^2 implies (p+(ND-NA))*p=ni^2

+//p^2+(ND-NA)*p-ni^2=0

+m=[1 (ND-NA) -ni^2];//polynomial

+p=roots(m);//per m^3

+p=p(2);//taking only +ve value

+n=ni^2/p;//per m^3

+J=(n*mu_n+p*mu_p)*q*E/10^-4;//A/m^2

+disp(J,"Total current density(A/m^2) : ");

+//Answer in the textbook is not accurate.

diff --git a/2198/CH1/EX1.13.2/Ex1_13_2.sce b/2198/CH1/EX1.13.2/Ex1_13_2.sce
new file mode 100755
index 000000000..51329eb64
--- /dev/null
+++ b/2198/CH1/EX1.13.2/Ex1_13_2.sce
@@ -0,0 +1,23 @@
+//Ex 1.13.2

+clc;clear;close;

+format('v',9);

+

+//Given : 

+ND=10^14;//per cm^3

+NA=7*10^3;//per cm^3

+rho_i=60;//ohm-cm

+J=52;//mA/cm^2

+q=1.6*10^-19;//Coulomb

+mu_p=1800;//cm^2/V-s

+mu_n=3800;//cm^2/V-s

+sigma_i=1/rho_i;//(ohm-cm)^-1

+ni=sigma_i/q/(mu_n+mu_p);//per cm^3

+//n=p+(ND-NA);//per cm^3

+//n*p=ni^2 implies (p+(ND-NA))*p=ni^2

+//p^2+(ND-NA)*p-ni^2=0

+m=[1 (ND-NA) -ni^2];//polynomial

+p=roots(m);//per m^3

+p=p(2);//taking only +ve value

+n=ni^2/p;//per m^3

+E=J*10^-3/q/(n*mu_n+p*mu_p);//V/m

+disp(E,"Value of electrical field,E(V/cm) : ");

diff --git a/2198/CH1/EX1.13.3/Ex1_13_3.sce b/2198/CH1/EX1.13.3/Ex1_13_3.sce
new file mode 100755
index 000000000..72ec4a0ef
--- /dev/null
+++ b/2198/CH1/EX1.13.3/Ex1_13_3.sce
@@ -0,0 +1,23 @@
+//Ex 1.13.3

+clc;clear;close;

+format('v',9);

+

+//Given : 

+ND=10^14;//per cm^3

+NA=7*10^13;//per cm^3

+rho_i=60;//ohm-cm

+E=2;//V/cm

+q=1.6*10^-19;//Coulomb

+mu_p=500;//cm^2/V-s

+mu_n=1300;//cm^2/V-s

+sigma_i=1/rho_i;//(ohm-cm)^-1

+ni=sigma_i/q/(mu_n+mu_p);//per cm^3

+//n=p+(ND-NA);//per cm^3

+//n*p=ni^2 implies (p+(ND-NA))*p=ni^2

+//p^2+(ND-NA)*p-ni^2=0

+m=[1 (ND-NA) -ni^2];//polynomial

+p=roots(m);//per m^3

+p=p(2);//taking only +ve value

+n=ni^2/p;//per m^3

+J=(n*mu_n+p*mu_p)*q*E/10^-4;//A/m^2

+disp(J,"Total current density(A/m^2) : ");

diff --git a/2198/CH1/EX1.13.4/Ex1_13_4.sce b/2198/CH1/EX1.13.4/Ex1_13_4.sce
new file mode 100755
index 000000000..a5ff522e7
--- /dev/null
+++ b/2198/CH1/EX1.13.4/Ex1_13_4.sce
@@ -0,0 +1,11 @@
+//Ex 1.13.4

+clc;clear;close;

+format('v',9);

+

+//Given : 

+l=6*10^-2;//m

+V=12;//volts

+v=73;//m/s

+E=V/l;//V/m

+mu=v/E;//m^2/V-s

+disp(mu,"Electron mobilitym^2/V-s) : ");

diff --git a/2198/CH1/EX1.15.1/Ex1_15_1.sce b/2198/CH1/EX1.15.1/Ex1_15_1.sce
new file mode 100755
index 000000000..86eb7b415
--- /dev/null
+++ b/2198/CH1/EX1.15.1/Ex1_15_1.sce
@@ -0,0 +1,15 @@
+//Ex 1.15.1

+clc;clear;close;

+format('v',9);

+

+//Given : 

+ND=10^13;//per cm^3

+Bz=0.2;//Wb/m^2

+d=5;//mm

+E=5;//V/cm

+q=1.6*10^-19;//Coulomb

+mu_n=1300;//cm^2/V-s

+rho=ND*q;//Coulomb/cm^3

+J=rho*mu_n*E;//A/cm^2

+VH=Bz*10^-4*J*d*10^-1/rho;//V

+disp(VH*10^3,"Magnitude of hall voltage(mV) : ");

diff --git a/2198/CH1/EX1.15.2/Ex1_15_2.sce b/2198/CH1/EX1.15.2/Ex1_15_2.sce
new file mode 100755
index 000000000..0edf63199
--- /dev/null
+++ b/2198/CH1/EX1.15.2/Ex1_15_2.sce
@@ -0,0 +1,15 @@
+//Ex 1.15.2

+clc;clear;close;

+format('v',9);

+

+//Given : 

+rho=220*10^3*10^-2;//ohm/m

+d=2.2*10^-3;//m

+w=2*10^-3;//m

+B=0.1;//Wb/m^2

+I=5*10^-6;//A

+VH=28*10^-3;//V

+sigma=1/rho;//(ohm-m)^-1

+RH=VH*w/(B*I);//ohm

+mu=sigma*RH;//m^2/V-s

+disp(mu,"Mobility(m^2/V-s) : ");

diff --git a/2198/CH1/EX1.16.1/Ex1_16_1.sce b/2198/CH1/EX1.16.1/Ex1_16_1.sce
new file mode 100755
index 000000000..666b7c362
--- /dev/null
+++ b/2198/CH1/EX1.16.1/Ex1_16_1.sce
@@ -0,0 +1,17 @@
+//Ex 1.16.1

+clc;clear;close;

+format('v',9);

+

+//Given : 

+l=4*10^-2;//m

+A=10*10^-6;//m^2

+V=1;//Volt

+I=5*10^-3;//A

+q=1.6*10^-19;//Coulomb

+mu=1300;//cm^2/V-s

+J=I/A;//A/m^2

+E=V/l;//V/m

+n=J/(q*mu*10^-4*E)

+v=mu*10^-4*E;//m/s

+disp(n,"Concentration of electron(per m^3) : ");

+disp(v,"Electron velocity(m/s) : ");

diff --git a/2198/CH1/EX1.16.2/Ex1_16_2.sce b/2198/CH1/EX1.16.2/Ex1_16_2.sce
new file mode 100755
index 000000000..df2c52457
--- /dev/null
+++ b/2198/CH1/EX1.16.2/Ex1_16_2.sce
@@ -0,0 +1,13 @@
+//Ex 1.16.2

+clc;clear;close;

+format('v',9);

+

+//Given : 

+mu_n=3800;//cm^2/V-s

+mu_p=1300;//cm^2/V-s

+ni=2.5*10^13;//per cm^3

+q=1.6*10^-19;//Coulomb

+ND=4.4*10^22/10^8;//per cm^3

+sigma_n=ND*q*mu_n;//(ohm-m)^-1

+rho_n=1/sigma_n;//ohm-cm

+disp(rho_n,"Resistivity of doped Ge(ohm-cm) : ");

diff --git a/2198/CH1/EX1.16.3/Ex1_16_3.sce b/2198/CH1/EX1.16.3/Ex1_16_3.sce
new file mode 100755
index 000000000..c54176f0a
--- /dev/null
+++ b/2198/CH1/EX1.16.3/Ex1_16_3.sce
@@ -0,0 +1,9 @@
+//Ex 1.16.3

+clc;clear;close;

+format('v',9);

+

+//Given : 

+ni=1.5*10^16;//per m^3

+n=5*10^20;//per m^3

+p=ni^2/n;//per m^3

+disp(p,"Minor carrier density(per m^3) : ");

diff --git a/2198/CH1/EX1.16.4/Ex1_16_4.sce b/2198/CH1/EX1.16.4/Ex1_16_4.sce
new file mode 100755
index 000000000..96d24ccba
--- /dev/null
+++ b/2198/CH1/EX1.16.4/Ex1_16_4.sce
@@ -0,0 +1,28 @@
+//Ex 1.16.4

+clc;clear;close;

+format('v',9);

+

+//Given : 

+ni=1.5*10^10;//per cm^3

+mu_n=1400;//cm^2/V-s

+mu_p=500;//cm^2/V-s

+l=1;//cm

+a=1;//mm^2

+q=1.6*10^-19;//Coulomb

+del_n=10^14;//per cm^3

+del_p=10^14;//per cm^3

+Nd=8*10^15;//per cm^3

+n=Nd;//per cm^3(Nd>>ni)

+disp(n,"Electron concentration, n(per cm^3) : ");

+p=ni^2/n;//per m^3

+disp(p,"Hole concentration, p(per cm^3) : ");

+nT=Nd+del_n;//per cm^3

+disp(nT,"Total electron concentration, nT(per cm^3) : ");

+pT=p+del_p;//per cm^3

+disp(pT,"Total hole concentration, pT(per cm^3) : ");

+sigma=(nT*mu_n+pT*mu_p)*q;//(ohm-cm)^-1

+rho=1/sigma;//ohm-cm

+R=rho*l/(a*10^-2);//ohm

+V=2;//volt

+I=V/R;//A

+disp(I*1000,"Current, I(mA) : ");

diff --git a/2198/CH1/EX1.16.5/Ex1_16_5.sce b/2198/CH1/EX1.16.5/Ex1_16_5.sce
new file mode 100755
index 000000000..3e55e148a
--- /dev/null
+++ b/2198/CH1/EX1.16.5/Ex1_16_5.sce
@@ -0,0 +1,19 @@
+//Ex 1.16.5

+clc;clear;close;

+format('v',9);

+

+//Given : 

+A=2.3*10^-4;//m^2

+n=1.5*10^16;//per m^3

+l=1;//mm

+mu_n=1400;//cm^2/V-s

+mu_p=500;//cm^2/V-s

+p=n;//per m^3

+ni=n;//per m^3

+q=1.6*10^-19;//Coulomb

+sigma_i=ni*(mu_n*10^-4+mu_p*10^-4)*q;//(ohm-m)^-1

+rho_i=1/sigma_i;//ohm-m

+R=rho_i*l*10^-3/A;//ohm

+V=9;//volt

+I=V/R;//A

+disp(I*1000,"Current, I(mA) : ");

diff --git a/2198/CH1/EX1.16.6/Ex1_16_6.sce b/2198/CH1/EX1.16.6/Ex1_16_6.sce
new file mode 100755
index 000000000..79dc66366
--- /dev/null
+++ b/2198/CH1/EX1.16.6/Ex1_16_6.sce
@@ -0,0 +1,15 @@
+//Ex 1.16.6

+clc;clear;close;

+format('v',9);

+

+//Given : 

+ND=10^14;//per m^3

+Jn=10;//mA/cm^2

+E=3;//V/cm

+T=27+273;//K

+q=1.6*10^-19;//Coulomb

+mu_n=1500;//cm^2/V-s

+Dn=mu_n/39;//Diffusion constant

+n=ND;//per m^3

+dnBYdx=((Jn*10^-3/10^-4)-n*q*mu_n*E)/q/Dn;//concentration gradient

+disp(dnBYdx,"Concentration gradient, dn/dx : ");

diff --git a/2198/CH1/EX1.16.7/Ex1_16_7.sce b/2198/CH1/EX1.16.7/Ex1_16_7.sce
new file mode 100755
index 000000000..8c28da157
--- /dev/null
+++ b/2198/CH1/EX1.16.7/Ex1_16_7.sce
@@ -0,0 +1,23 @@
+//Ex 1.16.7

+clc;clear;close;

+format('v',9);

+

+//Given : 

+ND=10^13;//per m^3

+NA=10^14;//per m^3

+rho_i=44;//ohm-cm

+E=3;//V/cm

+q=1.6*10^-19;//Coulomb

+mu_n=0.38;//m^2/V-s

+mu_p=0.18;//m^2/V-s

+ni=2.5*10^19;//per m^3

+//n=p+(ND-NA);//per cm^3

+//n*p=ni^2 implies (p+(ND-NA))*p=ni^2

+//p^2+(ND-NA)*p-ni^2=0

+m=[1 (ND-NA) -ni^2];//polynomial

+p=roots(m);//per m^3

+p=p(1);//taking only +ve value

+n=ni^2/p;//per m^3

+J=(n*mu_n+p*mu_p)*q*(E/10^-2);//A/m^2

+disp(J,"Total current density(A/m^2) : ");

+//Ans in the textbook is not accurate.

diff --git a/2198/CH1/EX1.16.8/Ex1_16_8.sce b/2198/CH1/EX1.16.8/Ex1_16_8.sce
new file mode 100755
index 000000000..14300bb70
--- /dev/null
+++ b/2198/CH1/EX1.16.8/Ex1_16_8.sce
@@ -0,0 +1,20 @@
+//Ex 1.16.8

+clc;clear;close;

+format('v',9);

+

+//Given : 

+T=300;//K

+ni=2.5*10^13;//per cm^3

+mu_n=3800;//cm^2/V-s

+mu_p=1800;//cm^2/V-s

+q=1.6*10^-19;//Coulomb

+sigma_i=ni*(mu_n+mu_p)*q/10^-2;//(ohm-m)^-1

+disp(sigma_i,"Conductivity of intrinsic Ge in (ohm-m)^-1 : ");

+ND=4.4*10^22/10^7;//per cm^3

+n=ND;//per cm^3

+sigma_n=n*mu_n*q/10^-2;//(ohm-m)^-1

+disp(sigma_n,"Conductivity after adding donor impurity in (ohm-m)^-1 : ");

+NA=4.4*10^22/10^7;//per cm^3

+p=NA;//per cm^3

+sigma_p=p*mu_p*q/10^-2;//(ohm-m)^-1

+disp(sigma_p,"Conductivity after adding acceptor impurity in (ohm-m)^-1 : ");

diff --git a/2198/CH1/EX1.40.1/Ex1_40_1.sce b/2198/CH1/EX1.40.1/Ex1_40_1.sce
new file mode 100755
index 000000000..aa85a9e7f
--- /dev/null
+++ b/2198/CH1/EX1.40.1/Ex1_40_1.sce
@@ -0,0 +1,10 @@
+//Ex 1.40.1

+clc;clear;close;

+format('v',9);

+

+//Given : 

+ND=10^17;//per cm^3

+ni=1.5*10^10;//per cm^3

+no=ND;//per cm^3///Nd>>ni

+po=ni^2/no;//per cm^3

+disp(po,"Equilibrium hole concentration (per cm^3) : ");

diff --git a/2198/CH1/EX1.40.10/Ex1_40_10.sce b/2198/CH1/EX1.40.10/Ex1_40_10.sce
new file mode 100755
index 000000000..d6b95afd1
--- /dev/null
+++ b/2198/CH1/EX1.40.10/Ex1_40_10.sce
@@ -0,0 +1,12 @@
+//Ex 1.40.10

+clc;clear;close;

+format('v',9);

+

+//Given : 

+rho=9.6*10^-2;//ohm-m

+mu_n=1300;//cm^2/V-s

+q=1.6*10^-19;//Coulomb

+sigma_n=1/rho;//(ohm-m)^-1

+ND=sigma_n/q/(mu_n*10^-4);//per m^3

+ni=5*10^22*10^6;//per m^3

+disp(ND/ni,"Ratio of donor atom to Si atom : ");

diff --git a/2198/CH1/EX1.40.11/Ex1_40_11.sce b/2198/CH1/EX1.40.11/Ex1_40_11.sce
new file mode 100755
index 000000000..b698d23ce
--- /dev/null
+++ b/2198/CH1/EX1.40.11/Ex1_40_11.sce
@@ -0,0 +1,10 @@
+//Ex 1.40.11

+clc;clear;close;

+format('v',9);

+

+//Given : 

+ni=1.5*10^10;//per cm^3

+n_n=2.25*10^15;//per cm^3

+disp(n_n,"Equillibrium electron density(per cm^3) : ");

+p_n=ni^2/n_n;//per cm^3

+disp(p_n,"Equillibrium hole density(per cm^3) : ");

diff --git a/2198/CH1/EX1.40.12/Ex1_40_12.sce b/2198/CH1/EX1.40.12/Ex1_40_12.sce
new file mode 100755
index 000000000..62527923c
--- /dev/null
+++ b/2198/CH1/EX1.40.12/Ex1_40_12.sce
@@ -0,0 +1,9 @@
+//Ex 1.40.12

+clc;clear;close;

+format('v',9);

+

+//Given : 

+NA=2*10^16;//per cm^3

+ND=10^16;//per cm^3

+p=NA-ND;//per cm^3

+disp(p,"Material is p-type & Carrier concentration(holes per cm^3) : ");

diff --git a/2198/CH1/EX1.40.13/Ex1_40_13.sce b/2198/CH1/EX1.40.13/Ex1_40_13.sce
new file mode 100755
index 000000000..b2e7a8652
--- /dev/null
+++ b/2198/CH1/EX1.40.13/Ex1_40_13.sce
@@ -0,0 +1,9 @@
+//Ex 1.40.13

+clc;clear;close;

+format('v',9);

+

+//Given : 

+del_n=10^15;//per cm^3

+tau_p=10*10^-6;//sec

+rate=del_n/tau_p;//rate of generation minority carrier

+disp(rate,"Rate of generation of minority carrier(electron hole pair/sec/cm^3) : ");

diff --git a/2198/CH1/EX1.40.14/Ex1_40_14.sce b/2198/CH1/EX1.40.14/Ex1_40_14.sce
new file mode 100755
index 000000000..841a6bcf3
--- /dev/null
+++ b/2198/CH1/EX1.40.14/Ex1_40_14.sce
@@ -0,0 +1,9 @@
+//Ex 1.40.14

+clc;clear;close;

+format('v',9);

+

+//Given : 

+E=10;//V/cm

+v=1/(20*10^-6);//m/s

+mu=v/E;//cm^2/V-s

+disp(mu,"Mobility(cm^2/V-s) : ");

diff --git a/2198/CH1/EX1.40.15/Ex1_40_15.sce b/2198/CH1/EX1.40.15/Ex1_40_15.sce
new file mode 100755
index 000000000..bcf1cb27a
--- /dev/null
+++ b/2198/CH1/EX1.40.15/Ex1_40_15.sce
@@ -0,0 +1,30 @@
+//Ex 1.40.15

+clc;clear;close;

+format('v',9);

+

+//Given : 

+ND=4.5*10^15;//per cm^3

+A=1*10^-2;//cm^2

+l=10;//cm

+tau_p=1*10^-6;//sec

+tau_n=1*10^-6;//sec

+Dp=12;//cm^2/sec

+Dn=30;//cm^2/sec

+q=1.6*10^-19;//Coulomb

+del_p=10^21;//electron hole pair/cm^3/sec

+x=34.6*10^-4;//cm

+Kdash=26;//mV(Kdash is taken as K*T/q)

+ni=1.5*10^10;//per cm^3

+no=ND;//per cm^3//ND<<ni

+po=ni^2/no;//per cm^3

+ln=sqrt(Dn*tau_n);//cm

+lp=sqrt(Dp*tau_p);//cm

+dpBYdx=del_p*exp(-x/lp);//per cm^4

+dnBYdx=del_p*exp(-x/ln);//per cm^4

+Jp=-q*Dp*dpBYdx;//A/cm^2

+Ip=Jp*A;//A

+disp(Ip,"Hole diffusion current (A) : ");

+Jn=q*Dn*dnBYdx;//A/cm^2

+In=Jn*A;//A

+disp(In,"Electron diffusion current (A) : ");

+//Solution is not complete in the book and value of Jp & Jn is due to wrong calculation for dpBYdx and dnBYdx.

diff --git a/2198/CH1/EX1.40.16/Ex1_40_16.sce b/2198/CH1/EX1.40.16/Ex1_40_16.sce
new file mode 100755
index 000000000..9bda625d8
--- /dev/null
+++ b/2198/CH1/EX1.40.16/Ex1_40_16.sce
@@ -0,0 +1,11 @@
+//Ex 1.40.16

+clc;clear;close;

+format('v',9);

+

+//Given : 

+h=6.626*10^-34;//J-s

+lambda=5490;//Angstrum

+c=3*10^8;//m/s(speed of light)

+f=c/(lambda*10^-10);//Hz

+E=(h/1.6/10^-19)*f;//eV

+disp(E,"Energy band gap(eV) : ");

diff --git a/2198/CH1/EX1.40.17/Ex1_40_17.sce b/2198/CH1/EX1.40.17/Ex1_40_17.sce
new file mode 100755
index 000000000..096537950
--- /dev/null
+++ b/2198/CH1/EX1.40.17/Ex1_40_17.sce
@@ -0,0 +1,16 @@
+//Ex 1.40.17

+clc;clear;close;

+format('v',9);

+

+//Given : 

+q=1.6*10^-19;//Coulomb

+Dn=35;//cm^2/s

+x=[0 2];//micro meter

+n=[10^17 6*10^16];//per cm^3

+plot(x,n);

+title('n Vs x');

+xlabel('x(micro meter)');

+ylabel('n(electrons per cm^3)');

+dnBYdx=(n(2)-n(1))/(x(2)-x(1))/10^-4;//gradient

+Jn=q*Dn*dnBYdx;//A/cm^2

+disp(Jn,"Current density(A/cm^2) : ");

diff --git a/2198/CH1/EX1.40.18/Ex1_40_18.sce b/2198/CH1/EX1.40.18/Ex1_40_18.sce
new file mode 100755
index 000000000..122743189
--- /dev/null
+++ b/2198/CH1/EX1.40.18/Ex1_40_18.sce
@@ -0,0 +1,14 @@
+//Ex 1.40.18

+clc;clear;close;

+format('v',9);

+

+//Given : 

+q=1.6*10^-19;//Coulomb

+l=0.1;//cm

+A=100*10^-8;//cm^2

+n_n=5*10^20*10^-6;//per cm^3

+mu_n=0.13*10^4;//cm^2/V-s

+sigma_n=q*n_n*mu_n;//(ohm-cm)^-1

+rho=1/sigma_n;//ohm-cm

+R=rho*l/A;//ohm

+disp(round(R/10^6),"Resistance of the bar(Mohm) : ");

diff --git a/2198/CH1/EX1.40.19/Ex1_40_19.sce b/2198/CH1/EX1.40.19/Ex1_40_19.sce
new file mode 100755
index 000000000..d50a09089
--- /dev/null
+++ b/2198/CH1/EX1.40.19/Ex1_40_19.sce
@@ -0,0 +1,10 @@
+//Ex 1.40.19

+clc;clear;close;

+format('v',9);

+

+//Given : 

+NA=9*10^16;//per cm^3

+ND=1*10^16;//per cm^3

+w_total=3;//micro meter

+w_p=w_total*ND/NA;//micro meter

+disp(w_p,"Answer is (B). Depletion width on p-side(micro meter) : ");

diff --git a/2198/CH1/EX1.40.20/Ex1_40_20.sce b/2198/CH1/EX1.40.20/Ex1_40_20.sce
new file mode 100755
index 000000000..7ccf12b61
--- /dev/null
+++ b/2198/CH1/EX1.40.20/Ex1_40_20.sce
@@ -0,0 +1,9 @@
+//Ex 1.40.20

+clc;clear;close;

+format('v',9);

+

+//Given : 

+ni=1.5*10^16;//per m^3

+n_n=5*10^20;//per m^3

+p_n=ni^2/n_n;//per m^3

+disp(p_n,"Majority carrier density(per m^3) : ");

diff --git a/2198/CH1/EX1.40.21/Ex1_40_21.sce b/2198/CH1/EX1.40.21/Ex1_40_21.sce
new file mode 100755
index 000000000..77561481f
--- /dev/null
+++ b/2198/CH1/EX1.40.21/Ex1_40_21.sce
@@ -0,0 +1,16 @@
+//Ex 1.40.21

+clc;clear;close;

+format('v',9);

+

+//Given : 

+q=1.6*10^-19;//Coulomb

+Dn=25;//cm^2/s

+x=[0 0.5];//micro meter(base width)

+n=[10^14 0];//per cm^3

+plot(x,n);

+title('n Vs x');

+xlabel('x(micro meter)');

+ylabel('n(electrons per cm^3)');

+dnBYdx=(n(2)-n(1))/(x(1)-x(2))/10^-4;//gradient

+Jn=q*Dn*dnBYdx;//A/cm^2

+disp(Jn,"Current density(A/cm^2) : ");

diff --git a/2198/CH1/EX1.40.22/Ex1_40_22.sce b/2198/CH1/EX1.40.22/Ex1_40_22.sce
new file mode 100755
index 000000000..407da10e0
--- /dev/null
+++ b/2198/CH1/EX1.40.22/Ex1_40_22.sce
@@ -0,0 +1,10 @@
+//Ex 1.40.22

+clc;clear;close;

+format('v',9);

+

+//Given : 

+h=6.64*10^-34;//planks constant

+c=3*10^8;//m/s(speed of light)

+lambda=0.87*10^-6;//m

+Eg=h*c/lambda/(1.6*10^-19);//eV

+disp(Eg,"Band gap(eV)  : ");

diff --git a/2198/CH1/EX1.40.23/Ex1_40_23.sce b/2198/CH1/EX1.40.23/Ex1_40_23.sce
new file mode 100755
index 000000000..67ca25afc
--- /dev/null
+++ b/2198/CH1/EX1.40.23/Ex1_40_23.sce
@@ -0,0 +1,19 @@
+//Ex 1.40.23

+clc;clear;close;

+format('v',9);

+

+//Given : 

+t=0.46*10^-4;//cm

+E=2;//eV

+alfa=5*10^4;//cm^-1

+Io=10;//mW

+q=1.6*10^-19;//Coulomb

+It=Io*exp(-alfa*t);//mW

+Pabs=Io-It;//mW

+disp(round(Pabs),"(a) Absorbed power(mW) : ");

+Eg=1.43;//eV(Band gap)

+heat_fraction=(E-Eg)/E;

+E_heat=heat_fraction*Pabs*10^-3;//J/s(energy converted to heat)

+disp(E_heat,"(b) Rate of excess thermal energy(J/s) : ");

+photons=Pabs*10^-3/q/E;//no. of photons per sec

+disp(photons,"(c) No. of photons per sec : ");

diff --git a/2198/CH1/EX1.40.24/Ex1_40_24.sce b/2198/CH1/EX1.40.24/Ex1_40_24.sce
new file mode 100755
index 000000000..be0fb403c
--- /dev/null
+++ b/2198/CH1/EX1.40.24/Ex1_40_24.sce
@@ -0,0 +1,28 @@
+//Ex 1.40.24

+clc;clear;close;

+format('v',9);

+

+//Given : 

+Kdash=0.0259;//constant(taken as K*T/q)

+A=0.5;//cm^2

+Na=10^17;//per cm^3

+ni=1.5*10^10;//per cm^3

+delta_p=5*10^16;//per cm^3

+x=1000;//Angstrum

+mu_p=500;//cm^2/V-s

+tau_p=10^-10;//sec

+q=1.6*10^-19;//Coulomb

+

+Dp=Kdash*mu_p;//cm/s

+Lp=sqrt(Dp*tau_p);//cm

+p0=Na;//per cm^3

+p=p0+delta_p*exp(x*10^-8/Lp);//per cm^3

+delE1=log(p/ni)*Kdash;//eV(taken as Ei-Fp)

+Eg=1.12;//eV(Band gap)

+delE2=Eg-delE1;//eV(taken as Ec-Fp)

+disp(delE2,"Steady state separation between Fp & Ec in eV : ");

+Ip=q*A*Dp/Lp*delta_p*exp(x*10^-8/Lp);//A

+disp(Ip,"Hole current in A : ");

+Qp=q*A*delta_p*Lp;//C

+disp(Qp,"Excess stored hole charge(Coulomb)");

+//Answer in the book is wrong beacause of calculation mistake in the value of p & Ip.

diff --git a/2198/CH1/EX1.40.25/Ex1_40_25.sce b/2198/CH1/EX1.40.25/Ex1_40_25.sce
new file mode 100755
index 000000000..21123862b
--- /dev/null
+++ b/2198/CH1/EX1.40.25/Ex1_40_25.sce
@@ -0,0 +1,28 @@
+//Ex 1.40.25

+clc;clear;close;

+format('v',9);

+

+//Given : 

+Kdash=0.0259;//constant(taken as K*T/q)

+A=0.5;//cm^2

+Na=10^17;//per cm^3

+ni=1.5*10^10;//per cm^3

+delta_p=5*10^16;//per cm^3

+x=1000;//Angstrum

+mu_p=500;//cm^2/V-s

+tau_p=10^-10;//sec

+q=1.6*10^-19;//Coulomb

+

+Dp=Kdash*mu_p;//cm/s

+Lp=sqrt(Dp*tau_p);//cm

+p0=Na;//per cm^3

+p=p0+delta_p*exp(x*10^-8/Lp);//per cm^3

+delE1=log(p/ni)*Kdash;//eV(taken as Ei-Fp)

+Eg=1.12;//eV(Band gap)

+delE2=Eg-delE1;//eV(taken as Ec-Fp)

+disp(delE2,"Steady state separation between Fp & Ec in eV : ");

+Ip=q*A*Dp/Lp*delta_p*exp(x*10^-8/Lp);//A

+disp(Ip,"Hole current in A : ");

+Qp=q*A*delta_p*Lp;//C

+disp(Qp,"Excess stored hole charge(Coulomb)");

+//Answer in the book is wrong beacause of calculation mistake in the value of p & Ip.

diff --git a/2198/CH1/EX1.40.3/Ex1_40_3.sce b/2198/CH1/EX1.40.3/Ex1_40_3.sce
new file mode 100755
index 000000000..df292828c
--- /dev/null
+++ b/2198/CH1/EX1.40.3/Ex1_40_3.sce
@@ -0,0 +1,12 @@
+//Ex 1.40.3

+clc;clear;close;

+format('v',9);

+

+//Given : 

+ni=1.5*10^10;//per cm^3

+ND=10^17;//per cm^3

+no=ND;//per cm^3///Nd>>ni

+po=ni^2/no;//per cm^3

+KT=0.0259;//constant

+delEf=KT*log(no/ni);//eV

+disp("Fermi level, Ef = Ei+"+string(delEf)+" eV");

diff --git a/2198/CH1/EX1.40.4/Ex1_40_4.sce b/2198/CH1/EX1.40.4/Ex1_40_4.sce
new file mode 100755
index 000000000..6ba1100d5
--- /dev/null
+++ b/2198/CH1/EX1.40.4/Ex1_40_4.sce
@@ -0,0 +1,14 @@
+//Ex 1.40.4

+clc;clear;close;

+format('v',9);

+

+//Given : 

+K=1.38*10^-23;//J/K

+T=27+273;//K

+e=1.6*10^-19;//constant

+mu_n=0.17;//m^2/V-s

+mu_p=0.025;//m^2/V-s

+Dn=K*T/e*mu_n;//m^2/s

+disp(Dn,"Diffusion coffiecients of electron(m^2/s) : ");

+Dp=K*T/e*mu_p;//m^2/s

+disp(Dp,"Diffusion coffiecients of holes(m^2/s) : ");

diff --git a/2198/CH1/EX1.40.5/Ex1_40_5.sce b/2198/CH1/EX1.40.5/Ex1_40_5.sce
new file mode 100755
index 000000000..3e8f5b84f
--- /dev/null
+++ b/2198/CH1/EX1.40.5/Ex1_40_5.sce
@@ -0,0 +1,15 @@
+//Ex 1.40.5

+clc;clear;close;

+format('v',9);

+

+//Given : 

+K=1.38*10^-23;//J/K

+T=27+273;//K

+e=1.6*10^-19;//constant

+del_no=10^20;//per.m^3

+tau_n=10^-7;//s

+mu_n=0.15;//m^2/V-s

+Dn=K*T/e*mu_n;//m^2/s

+Ln=sqrt(Dn*tau_n);//m

+Jn=e*Dn*del_no/Ln;//A/m^2

+disp(Jn,"Diffusion current density(A/m^2) : ");

diff --git a/2198/CH1/EX1.40.6/Ex1_40_6.sce b/2198/CH1/EX1.40.6/Ex1_40_6.sce
new file mode 100755
index 000000000..fa90f9542
--- /dev/null
+++ b/2198/CH1/EX1.40.6/Ex1_40_6.sce
@@ -0,0 +1,13 @@
+//Ex 1.40.6

+clc;clear;close;

+format('v',9);

+

+//Given : 

+sigma_n=0.1;//(ohm-cm)^-1

+mu_n=1300;//m^2/V-s

+ni=1.5*10^10;//per cm^3

+q=1.6*10^-19;//Coulomb

+n_n=sigma_n/q/mu_n;//per cm^3

+p_n=ni^2/n_n;//per cm^3

+p_n=p_n*10^6;//per m^3

+disp(p_n,"Concentration of holes(per m^3) : ");

diff --git a/2198/CH1/EX1.40.7/Ex1_40_7.sce b/2198/CH1/EX1.40.7/Ex1_40_7.sce
new file mode 100755
index 000000000..a5c1a908b
--- /dev/null
+++ b/2198/CH1/EX1.40.7/Ex1_40_7.sce
@@ -0,0 +1,15 @@
+//Ex 1.40.7

+clc;clear;close;

+format('v',9);

+

+//Given : 

+L=100*10^-6;//m

+A=10^-7*10^-6;//m^2

+mu_e=0.13;//m^2/V-s

+mu_h=0.05;//m^2/V-s

+tau_h=10^-6;//sec

+V=12;//volt

+E=V/L;//v/m

+tn=L^2/(mu_e*V);//sec

+Gain=tau_h/tn*(1+mu_h/mu_e);//

+disp(Gain,"Photoconductor gain : ");

diff --git a/2198/CH1/EX1.40.8/Ex1_40_8.sce b/2198/CH1/EX1.40.8/Ex1_40_8.sce
new file mode 100755
index 000000000..bbd00bb67
--- /dev/null
+++ b/2198/CH1/EX1.40.8/Ex1_40_8.sce
@@ -0,0 +1,20 @@
+//Ex 1.40.8

+clc;clear;close;

+format('v',7);

+

+//Given : 

+T=300;//K

+rho_i=45;//ohm-cm

+//part (i)

+mu_n=3800;//cm^2/V-s

+mu_p=1800;//cm^2/V-s

+ni=2.5*10^13;//per cm^3

+q=1.6*10^-19;//Coulomb

+sigma=ni*q*(mu_n+mu_p);//(ohm-cm)^-1

+rho=1/sigma;//ohm-cm

+disp(round(rho),"Resistivity of intrinsic Ge at 300K(ohm-cm) : ");

+//part (ii)

+ND=4.4*10^22/10^8;//per cm^3

+sigma=ND*q*mu_n;//(ohm-cm)^-1

+rho=1/sigma;//ohm-cm

+disp(rho,"Resistivity of doped Ge(ohm-cm) : ");

diff --git a/2198/CH1/EX1.40.9/Ex1_40_9.sce b/2198/CH1/EX1.40.9/Ex1_40_9.sce
new file mode 100755
index 000000000..f822ad95b
--- /dev/null
+++ b/2198/CH1/EX1.40.9/Ex1_40_9.sce
@@ -0,0 +1,11 @@
+//Ex 1.40.9

+clc;clear;close;

+format('v',9);

+

+//Given : 

+ni=10^16;//per m^3

+ND=10^22;//per m^3

+n=ND;//per m^3//ND>>ni

+disp(n,"Electron concentration(per m^3) : ");

+p=ni^2/n;//per m^3

+disp(p,"Electron concentration(per m^3) : ");

diff --git a/2198/CH1/EX1.5.1/Ex1_5_1.sce b/2198/CH1/EX1.5.1/Ex1_5_1.sce
new file mode 100755
index 000000000..bb3a3e04d
--- /dev/null
+++ b/2198/CH1/EX1.5.1/Ex1_5_1.sce
@@ -0,0 +1,19 @@
+//Ex 1.5.1

+clc;clear;close;

+format('v',6);

+

+//Given : 

+t1=35;//degreeC

+t2=60;//degreeC

+T1=t1+273;//K

+T2=t2+273;//K

+disp("Forbidden gap for Si : ");

+EG1_Si=1.21-3.6*10^-4*T1;//eV

+disp(EG1_Si,"at 35 degree C in eV")

+EG2_Si=1.21-3.6*10^-4*T2;//eV

+disp(EG2_Si,"at 60 degree C in eV")

+disp("Forbidden gap for Ge : ");

+EG1_Ge=0.785-2.23*10^-4*T1;//eV

+disp(EG1_Ge,"at 35 degree C in eV")

+EG2_Ge=0.785-2.23*10^-4*T2;//eV

+disp(EG2_Ge,"at 60 degree C in eV")

diff --git a/2198/CH1/EX1.9.1/Ex1_9_1.sce b/2198/CH1/EX1.9.1/Ex1_9_1.sce
new file mode 100755
index 000000000..2fa0b2ccc
--- /dev/null
+++ b/2198/CH1/EX1.9.1/Ex1_9_1.sce
@@ -0,0 +1,17 @@
+//Ex 1.9.1

+clc;clear;close;

+format('v',9);

+

+//Given : 

+l=6*10^-2;//m

+V=1;//Volt

+A=10*10^-6;//m^2

+I=10*10^-3;//A

+q=1.602*10^-19;//Coulomb

+mu_n=1300*10^-4;//m^2/V-s

+E=V/l;//V/m

+v=mu_n*E;//m/s

+J=I/A;//A/m^2

+n=J/(q*mu_n*E);//per m^3

+disp(n,"(i) Concentration of electron(m^3) : ");

+disp(v,"(ii) Drift velocity(m/s) : ");

diff --git a/2198/CH1/EX1.9.2/Ex1_9_2.sce b/2198/CH1/EX1.9.2/Ex1_9_2.sce
new file mode 100755
index 000000000..38cecbb4d
--- /dev/null
+++ b/2198/CH1/EX1.9.2/Ex1_9_2.sce
@@ -0,0 +1,11 @@
+//Ex 1.9.2

+clc;clear;close;

+format('v',9);

+

+//Given : 

+l=6*10^-2;//m

+V=12;//Volt

+v=73;//m/s

+E=V/l;//V/m

+mu=v/E;//m^2/V-s

+disp(mu,"Electron mobility(m^2/V-s) : ");

diff --git a/2198/CH2/EX2.10.2/Ex2_10_2.sce b/2198/CH2/EX2.10.2/Ex2_10_2.sce
new file mode 100755
index 000000000..e4c49a9c5
--- /dev/null
+++ b/2198/CH2/EX2.10.2/Ex2_10_2.sce
@@ -0,0 +1,21 @@
+//Ex 2.10.2

+clc;clear;close;

+format('v',8);

+

+//Given : 

+rho_n=10;//ohm-cm

+rho_p=3.5;//ohm-cm

+ni=1.5*10^10;//per cm^3

+Vj=0.56;//volt

+q=1.6*10^-19;//Coulomb

+mu_n=1500;//cm^2/V-s

+mu_p=500;//cm^2/V-s

+sigma_p=1/rho_p;//(ohm-cm)^-1

+NA=sigma_p/q/mu_p;//per cm^3

+sigma_n=1/rho_n;//(ohm-cm)^-1

+ND=sigma_n/q/mu_n;//per cm^3

+VT=Vj/log(NA*ND/ni^2);//V

+T=11600*VT;//K

+disp(T,"Temperature of junction in degree K : ");

+t=T-273;//degree C

+disp(t,"Temperature of junction in degree C : ");

diff --git a/2198/CH2/EX2.11.1/Ex2_11_1.sce b/2198/CH2/EX2.11.1/Ex2_11_1.sce
new file mode 100755
index 000000000..f6e2df5d9
--- /dev/null
+++ b/2198/CH2/EX2.11.1/Ex2_11_1.sce
@@ -0,0 +1,16 @@
+//Ex 2.11.1

+clc;clear;close;

+format('v',8);

+

+//Given : 

+Io=10;//nA

+T1=27+273;//K

+T2=87+273;//K

+VT=T1/11600;//V

+Eta=2;//for Si

+m=1.5;//for Si

+VGO=-1.21;//volt

+K=Io*10^-9/T1^m/exp(VGO/Eta/VT);//constant

+VT=T2/11600;//V

+Io2=K*T2^m*exp(VGO/Eta/VT);//A

+disp(Io2*10^9,"Reverse saturation current at 87 degree C in nA : ");

diff --git a/2198/CH2/EX2.11.2/Ex2_11_2.sce b/2198/CH2/EX2.11.2/Ex2_11_2.sce
new file mode 100755
index 000000000..05f7b1c18
--- /dev/null
+++ b/2198/CH2/EX2.11.2/Ex2_11_2.sce
@@ -0,0 +1,19 @@
+//Ex 2.11.2

+clc;clear;close;

+format('v',8);

+

+//Given : 

+V=0.45;//volt

+Eta=2;//for Si

+T1=27+273;//K

+T2=125+273;//K

+VT1=T1/11600;//V

+VT2=T2/11600;//V

+I1BYIo1=exp(V/Eta/VT1);

+I2BYIo2=exp(V/Eta/VT2);

+m=1.5;//for Si

+VGO=1.21;//volt

+Io1BYIo2=(T1/T2)^m*exp(-VGO/Eta/VT1+VGO/Eta/VT2);//constant

+I2BYI1=I2BYIo2/I1BYIo1/Io1BYIo2;

+disp(I2BYI1,"Factor by which current increases : ");

+//Answer is wrong in the textbook.

diff --git a/2198/CH2/EX2.11.3/Ex2_11_3.sce b/2198/CH2/EX2.11.3/Ex2_11_3.sce
new file mode 100755
index 000000000..370d991da
--- /dev/null
+++ b/2198/CH2/EX2.11.3/Ex2_11_3.sce
@@ -0,0 +1,21 @@
+//Ex 2.11.3

+clc;clear;close;

+format('v',8);

+

+//Given : 

+Io1=2;//nA

+T1=10+273;//K

+V=0.4;//volt

+VT1=T1/11600;//V

+m=1.5;//for Si

+Eta=2;//for Si

+VGO=-1.21;//volt

+K=Io1*10^-9/T1^m/exp(VGO/Eta/VT1);//constant

+I1=Io1*10^-9*[exp(V/Eta/VT1)-1];//nA

+T2=70+273;//K

+VT2=T2/11600;//V

+Io2=K*T2^m*[exp(VGO/Eta/VT2)];//A

+I2=Io2*[exp(V/Eta/VT2)-1];//nA

+change=(I2-I1)/I1*100;//%

+disp(change,"% change in diode current : ");

+//Answer is wrong in the textbook.

diff --git a/2198/CH2/EX2.11.4/Ex2_11_4.sce b/2198/CH2/EX2.11.4/Ex2_11_4.sce
new file mode 100755
index 000000000..1aba886f3
--- /dev/null
+++ b/2198/CH2/EX2.11.4/Ex2_11_4.sce
@@ -0,0 +1,25 @@
+//Ex 2.11.4

+clc;clear;close;

+format('v',8);

+

+//Given : 

+T=300;//K

+m_Si=1.5;//for Si

+m_Ge=1.5;//for Ge

+EGO_Si=1.21;//volt

+EGO_Ge=0.785;//volt

+Eta_Si=2;

+Eta_Ge=1;

+VT=26/1000;//V

+disp("Part(i) : ");

+d_logIoBYdt_Ge=m_Ge/T+EGO_Ge/(Eta_Ge*T*VT);//per degree C

+disp(d_logIoBYdt_Ge,"d(log(Io))/dt for Ge (per degree C) : ");

+d_logIoBYdt_Si=m_Si/T+EGO_Si/(Eta_Si*T*VT);//per degree C

+disp(d_logIoBYdt_Si,"d(log(Io))/dt for Si (per degree C) : ");

+disp("Part(ii) : ");

+V=0.2;//volt

+dVBYdt_Ge=V/T-Eta_Ge*VT*d_logIoBYdt_Ge

+disp(dVBYdt_Ge*1000,"dV/dt for Si (mV per degree C) : ");

+V=0.6;//volt

+dVBYdt_Si=V/T-Eta_Si*VT*d_logIoBYdt_Si

+disp(dVBYdt_Si*1000,"dV/dt for Si (mV per degree C) : ");

diff --git a/2198/CH2/EX2.12.1/Ex2_12_1.sce b/2198/CH2/EX2.12.1/Ex2_12_1.sce
new file mode 100755
index 000000000..9a2795d20
--- /dev/null
+++ b/2198/CH2/EX2.12.1/Ex2_12_1.sce
@@ -0,0 +1,16 @@
+//Ex 2.12.1

+clc;clear;close;

+format('v',8);

+

+//Given : 

+NA=4*10^20;//per m^3

+Vj=0.2;//volt

+V1=-1;//volts

+V2=-5;//volts

+epsilon_r=16;//for Ge

+epsilon_o=8.85*10^-12;//permitivity

+q=1.6*10^-19;//Coulomb

+W1=sqrt(2*epsilon_r*epsilon_o*(Vj-V1)/q/NA);//m

+disp(W1*10^6,"Width of depletion region(micro meter) : ");

+W2=sqrt(2*epsilon_r*epsilon_o*(Vj-V2)/q/NA);//m

+disp(W2*10^6,"New value of Width of depletion region(micro meter) : ");

diff --git a/2198/CH2/EX2.12.2/Ex2_12_2.sce b/2198/CH2/EX2.12.2/Ex2_12_2.sce
new file mode 100755
index 000000000..38c41197f
--- /dev/null
+++ b/2198/CH2/EX2.12.2/Ex2_12_2.sce
@@ -0,0 +1,19 @@
+//Ex 2.12.2

+clc;clear;close;

+format('v',8);

+

+//Given : 

+NA=4*10^20;//per m^3

+Vj=0.2;//Volt

+V1=-1;//Volts

+V2=-5;//Volts

+A=0.8*10^-6;//m^2

+epsilon_r=16;//for Ge

+epsilon_o=8.85*10^-12;//permitivity

+q=1.6*10^-19;//Coulomb

+W1=sqrt(2*epsilon_r*epsilon_o*(Vj-V1)/q/NA);//m

+CT1=epsilon_r*epsilon_o*A/W1;//

+disp(CT1*10^12,"Transition capacitance(pF) : ");

+W2=sqrt(2*epsilon_r*epsilon_o*(Vj-V2)/q/NA);//m

+CT2=epsilon_r*epsilon_o*A/W2;//

+disp(CT2*10^12,"New value of Transition capacitance(pF) : ");

diff --git a/2198/CH2/EX2.12.3/Ex2_12_3.sce b/2198/CH2/EX2.12.3/Ex2_12_3.sce
new file mode 100755
index 000000000..2c171cd74
--- /dev/null
+++ b/2198/CH2/EX2.12.3/Ex2_12_3.sce
@@ -0,0 +1,17 @@
+//Ex 2.12.3

+clc;clear;close;

+format('v',8);

+

+//Given : 

+NA=3*10^20;//per m^3

+Vj=0.2;//Volt

+V=-10;//Volts

+A=1*10^-6;//m^2

+epsilon_r=16;//for Ge

+epsilon_o=8.854*10^-12;//permitivity

+q=1.6*10^-19;//Coulomb

+W=sqrt(2*epsilon_r*epsilon_o*(Vj-V)/q/NA);//m

+disp(W*10^6,"Width of depletion region(micro meter) : ");

+CT=epsilon_r*epsilon_o*A/W;//

+disp(CT*10^12,"Transition capacitance(pF) : ");

+//Answer is wrong in the textbook.

diff --git a/2198/CH2/EX2.12.4/Ex2_12_4.sce b/2198/CH2/EX2.12.4/Ex2_12_4.sce
new file mode 100755
index 000000000..f560adb01
--- /dev/null
+++ b/2198/CH2/EX2.12.4/Ex2_12_4.sce
@@ -0,0 +1,13 @@
+//Ex 2.12.4

+clc;clear;close;

+format('v',8);

+

+//Given : 

+W=2*10^-4*10^-2;//m

+A=1*10^-6;//m^2

+epsilon_r=16;//for Ge

+epsilon_o=8.854*10^-12;//permitivity

+q=1.6*10^-19;//Coulomb

+CT=epsilon_r*epsilon_o*A/W;//

+disp(CT*10^12,"Barrier capacitance(pF) : ");

+//Answer is wrong in the textbook.

diff --git a/2198/CH2/EX2.12.5/Ex2_12_5.sce b/2198/CH2/EX2.12.5/Ex2_12_5.sce
new file mode 100755
index 000000000..ea2d05760
--- /dev/null
+++ b/2198/CH2/EX2.12.5/Ex2_12_5.sce
@@ -0,0 +1,21 @@
+//Ex 2.12.5

+clc;clear;close;

+format('v',8);

+

+//Given : 

+Vj=0.5;//Volt

+V=-4.5;//Volt

+rho_p=5*10^-2;//ohm-m

+epsilon_r=12;//for Si

+epsilon_o=8.854*10^-12;//permitivity

+q=1.6*10^-19;//Coulomb

+CT=100*10^-12;//F

+mu_p=500*10^-4;//m^2/V-s

+sigma_p=1/rho_p;//(ohm-m)^-1

+NA=sigma_p/q/mu_p;//per m^3

+W=sqrt(2*epsilon_r*epsilon_o*(Vj-V)/q/NA);//m

+A=CT*W/(epsilon_r*epsilon_o);//

+r=sqrt(A/%pi);//m

+D=2*r;//m

+disp(D*10^6,"Diameter(micro meter) : ");

+//Answer is wrong in the textbook. Sqrt is not taken while calculatng W value and also other mistakes.

diff --git a/2198/CH2/EX2.12.6/Ex2_12_6.sce b/2198/CH2/EX2.12.6/Ex2_12_6.sce
new file mode 100755
index 000000000..696c8771e
--- /dev/null
+++ b/2198/CH2/EX2.12.6/Ex2_12_6.sce
@@ -0,0 +1,18 @@
+//Ex 2.12.6

+clc;clear;close;

+format('v',8);

+

+//Given : 

+Eta=2;//for Si

+T=300;//K

+VT=26/1000;//V

+IbyIo=0.9;

+//part (i)

+V=log(IbyIo+1)*Eta*VT;//volt

+disp(V*1000,"Value of reverse voltage(mV) : ");

+//part (ii)

+VF=0.2;//volt

+VR=-0.2;//volt

+IFbyIR=(exp(VF/Eta/VT)-1)/(exp(VR/Eta/VT)-1)

+disp(IFbyIR,"Ratio of forward bias current to reverse saturation current : ");

+//Answer is wrong in the textbook.

diff --git a/2198/CH2/EX2.12.7/Ex2_12_7.sce b/2198/CH2/EX2.12.7/Ex2_12_7.sce
new file mode 100755
index 000000000..88f7a73cb
--- /dev/null
+++ b/2198/CH2/EX2.12.7/Ex2_12_7.sce
@@ -0,0 +1,39 @@
+//Ex 2.12.7

+clc;clear;close;

+format('v',8);

+

+//Given : 

+Vs=100;//V

+Rf1=20;//ohm

+Vgamma1=0.2;//Volts

+Rf2=15;//ohm

+Vgamma2=0.6;//Volts

+Vb_Ge=0.2;//Volts

+Vb_Si=0.6;//Volts

+R1=10*10^3;//ohm

+R2=1*10^3;//ohm

+//Case(i)

+Imax=Vs/R1;//A

+//D1 ON & D2 off

+V=Vb_Ge+Rf1*Imax;//Volt

+//D2 off as V<Vb_Si

+I2=0;//A

+I1=(Vs-V)/(R1+Rf1);//A

+disp("For R=10 kohm : ");

+disp(I1*1000,"I1(mA)=");

+disp(I2,"I2(mA)=");

+//Case(ii)

+R=R2;//ohm//D1 & D2 ON 

+//V=Vb_Ge+Rf1*I1//V=Vb_Si+Rf2*I2

+///V=Vs-I*R//V=Vs-(I1+I2)*R

+//20*I1-15*I2=Vb_Si-Vb_Ge

+//1020*I1+1000*I2=99.8

+A=[20 1020;-Rf2 R];

+B=[Vb_Ge-Vb_Ge Vs-Vb_Ge ];

+X=B*A^-1;//

+I1=X(1)*1000;//mA

+I2=X(2)*1000;//mA

+disp("For R=1 kohm : ");

+disp(I1,"I1(mA)=");

+disp(I2,"I2(mA)=");

+//Answer for 2nd part is not accurate in the book.

diff --git a/2198/CH2/EX2.12.8/Ex2_12_8.sce b/2198/CH2/EX2.12.8/Ex2_12_8.sce
new file mode 100755
index 000000000..6695075cd
--- /dev/null
+++ b/2198/CH2/EX2.12.8/Ex2_12_8.sce
@@ -0,0 +1,19 @@
+//Ex 2.12.8

+clc;clear;close;

+format('v',8);

+

+//Given : 

+Rf=10;//ohm

+Vgamma=0.5;//Volt

+RL=20;//ohm

+V=3;//Volt

+//Loop 1: 75*I1-50*I=V-Vgamma

+//Loop 2: -50*I1+80*I=-Vgamma

+A=[75 -50;-50 80];

+B=[V-Vgamma -Vgamma];

+X=B*A^-1;

+I1=X(1);//A

+I=X(2);//A

+Vx=-Vgamma+50*I1;//Volt

+disp(Vx,"DC source(Volts) : ");

+//Answer is wrong in the textbook.

diff --git a/2198/CH2/EX2.6.1/Ex2_6_1.sce b/2198/CH2/EX2.6.1/Ex2_6_1.sce
new file mode 100755
index 000000000..21b7e24d4
--- /dev/null
+++ b/2198/CH2/EX2.6.1/Ex2_6_1.sce
@@ -0,0 +1,14 @@
+//Ex 2.6.1

+clc;clear;close;

+format('v',6);

+

+//Given : 

+Ge=4.4*10^22;//atoms/cm^3

+NA=Ge/10^8;//per cm^3

+NA=NA*10^6;//per m^3

+ND=NA*10^3;//per m^3

+ni=2.5*10^13;//per cm^3

+ni=ni*10^6;//per m^3

+VT=26;//mV

+Vj=VT*log(NA*ND/ni^2);//mV

+disp(Vj,"Junction potential in mV : ");

diff --git a/2198/CH2/EX2.6.2/Ex2_6_2.sce b/2198/CH2/EX2.6.2/Ex2_6_2.sce
new file mode 100755
index 000000000..f5876e529
--- /dev/null
+++ b/2198/CH2/EX2.6.2/Ex2_6_2.sce
@@ -0,0 +1,15 @@
+//Ex 2.6.2

+clc;clear;close;

+format('v',6);

+

+//Given : 

+ni=2.5*10^15;//per cm^3

+Ge=4.4*10^22;//atoms/cm^3

+NA=Ge/10^8;//per cm^3

+NA=NA*10^6;//per m^3

+ND=NA*10^3;//per m^3

+ni=ni*10^6;//per m^3

+T=27+273;//K

+VT=T/11600;//V

+Vo=VT*log(NA*ND/ni^2);//V

+disp(Vo,"Contact potential in V : ");

diff --git a/2198/CH2/EX2.6.3/Ex2_6_3.sce b/2198/CH2/EX2.6.3/Ex2_6_3.sce
new file mode 100755
index 000000000..460b908b1
--- /dev/null
+++ b/2198/CH2/EX2.6.3/Ex2_6_3.sce
@@ -0,0 +1,21 @@
+//Ex 2.6.3

+clc;clear;close;

+format('v',6);

+

+//Given : 

+mu_n=1500*10^-4;//m^2/V-s

+mu_p=475*10^-4;//m^2/V-s

+ni=1.45*10^10*10^6;//per m^3

+q=1.6*10^-19;//Coulomb

+rho_p=10;//ohm-cm

+rho_p=rho_p*10^-2;//ohm-m

+rho_n=3.5;//ohm-cm

+rho_n=rho_n*10^-2;//ohm-m

+sigma_p=1/rho_p;//(ohm-m)^-1

+NA=sigma_p/q/mu_p;//m^3

+sigma_n=1/rho_n;//(ohm-m)^-1

+ND=sigma_p/q/mu_n;//m^3

+VT=26*10^-3;//V

+Vj=VT*log(NA*ND/ni^2);//V

+disp(Vj,"Height of potential barrier in V : ");

+//Anser in the book is wrong.

diff --git a/2198/CH2/EX2.6.4/Ex2_6_4.sce b/2198/CH2/EX2.6.4/Ex2_6_4.sce
new file mode 100755
index 000000000..57268b838
--- /dev/null
+++ b/2198/CH2/EX2.6.4/Ex2_6_4.sce
@@ -0,0 +1,22 @@
+//Ex 2.6.4

+clc;clear;close;

+format('v',6);

+

+//Given : 

+rho_p=2;//ohm-cm

+rho_p=rho_p*10^-2;//ohm-m

+rho_n=1;//ohm-cm

+rho_n=rho_n*10^-2;//ohm-m

+mu_n=1500*10^-4;//m^2/V-s

+mu_p=2100*10^-4;//m^2/V-s

+ni=2.5*10^13;//per m^3

+q=1.6*10^-19;//Coulomb

+sigma_p=1/rho_p;//(ohm-m)^-1

+NA=sigma_p/q/mu_p;//m^3

+sigma_n=1/rho_n;//(ohm-m)^-1

+ND=sigma_p/q/mu_n;//m^3

+T=27+273;//K

+VT=T/11600;//V

+Vj=VT*log(NA*ND/ni^2);//V

+disp(Vj,"Height of potential barrier in V : ");

+//Anser in the book is wrong.

diff --git a/2198/CH2/EX2.7.1/Ex2_7_1.sce b/2198/CH2/EX2.7.1/Ex2_7_1.sce
new file mode 100755
index 000000000..ba3bca495
--- /dev/null
+++ b/2198/CH2/EX2.7.1/Ex2_7_1.sce
@@ -0,0 +1,13 @@
+//Ex 2.7.1

+clc;clear;close;

+format('v',6);

+

+//Given : 

+Vgamma=0.6;//volt

+rf=12;//ohm

+V=5;//volts

+R=1;//kohm

+IF=(V-Vgamma)/(R*1000+rf);//A

+disp(IF*1000,"Diode current in mA :");

+VF=Vgamma+IF*rf;//volts

+disp(VF,"Diode voltage in volts :");

diff --git a/2198/CH2/EX2.7.2/Ex2_7_2.sce b/2198/CH2/EX2.7.2/Ex2_7_2.sce
new file mode 100755
index 000000000..ea6c22a96
--- /dev/null
+++ b/2198/CH2/EX2.7.2/Ex2_7_2.sce
@@ -0,0 +1,17 @@
+//Ex 2.7.2

+clc;clear;close;

+format('v',7);

+

+//Given : 

+Vgamma=0.6;//volt

+Rf=10;//ohm

+Eta=2;

+Vm=0.2;//volts

+Vdc=10;//volts

+RL=1;//kohm

+IDQ=(Vdc-Vgamma)/(RL*1000+Rf);//A

+VT=25*10^-3;//volts

+rd=Eta*VT/IDQ;//ohm

+disp("Alternating component of voltage across RL, Vo(ac) = "+string(RL*1000/(RL*1000+rd)*Vm)+"*sin(omega*t)");

+Vo_DC=IDQ*RL*1000;//volts

+disp("Total load voltage  = "+string(Vo_DC)+"+"+string(RL*1000/(RL*1000+rd)*Vm)+"*sin(omega*t)");

diff --git a/2198/CH2/EX2.7.3/Ex2_7_3.sce b/2198/CH2/EX2.7.3/Ex2_7_3.sce
new file mode 100755
index 000000000..724d89b9c
--- /dev/null
+++ b/2198/CH2/EX2.7.3/Ex2_7_3.sce
@@ -0,0 +1,17 @@
+//Ex 2.7.3

+clc;clear;close;

+format('v',8);

+

+//Given : 

+Eta=2;//for Si diode

+T=300;//K

+VT=T/11600;//V

+IbyIo=90/100;

+//I=Io*(exp(V/Eta/VT)-1)

+V=log(IbyIo+1)*Eta*VT;//V

+disp(V*1000,"Saturation value of voltage in mV : ");

+VF=0.5;//volts

+VR=-0.5;//volts

+IFbyIR=(exp(VF/Eta/VT)-1)/(exp(VR/Eta/VT)-1);//ratio

+disp(IFbyIR,"Ratio of forward to reverse current : ");

+//Answer in the book is wrong.

diff --git a/2198/CH2/EX2.7.4/Ex2_7_4.sce b/2198/CH2/EX2.7.4/Ex2_7_4.sce
new file mode 100755
index 000000000..0c81a0fea
--- /dev/null
+++ b/2198/CH2/EX2.7.4/Ex2_7_4.sce
@@ -0,0 +1,17 @@
+//Ex 2.7.4

+clc;clear;close;

+format('v',8);

+

+//Given : 

+Eta=2;//for Si diode

+T=300;//K

+VT=T/11600;//V

+IbyIo=90/100;

+//I=Io*(exp(V/Eta/VT)-1)

+V=log(IbyIo+1)*Eta*VT;//V

+disp(V*1000,"Saturation value of voltage in mV : ");

+VF=0.2;//volts

+VR=-0.2;//volts

+IFbyIR=(exp(VF/Eta/VT)-1)/(exp(VR/Eta/VT)-1);//ratio

+disp(IFbyIR,"Ratio of forward to reverse current : ");

+//Answer in the book is wrong.

diff --git a/2198/CH2/EX2.9.1/Ex2_9_1.sce b/2198/CH2/EX2.9.1/Ex2_9_1.sce
new file mode 100755
index 000000000..2faaf9755
--- /dev/null
+++ b/2198/CH2/EX2.9.1/Ex2_9_1.sce
@@ -0,0 +1,12 @@
+//Ex 2.9.1

+clc;clear;close;

+format('v',6);

+

+//Given : 

+IF=10;//mA

+VF=0.75;//volts

+T=27+273;//K

+Eta=2;//for Si diode

+VT=T/11600;//V

+Io=IF/(exp(VF/Eta/VT)-1);//mA

+disp(Io*10^6,"Reverse saturation current in nA : ");

diff --git a/2198/CH2/EX2.9.2/Ex2_9_2.sce b/2198/CH2/EX2.9.2/Ex2_9_2.sce
new file mode 100755
index 000000000..8c882f782
--- /dev/null
+++ b/2198/CH2/EX2.9.2/Ex2_9_2.sce
@@ -0,0 +1,12 @@
+//Ex 2.9.2

+clc;clear;close;

+format('v',6);

+

+//Given : 

+IF=10;//mA

+VF=0.3;//volts

+T=27+273;//K

+Eta=1;//for Ge diode

+VT=T/11600;//V

+Io=IF/(exp(VF/Eta/VT)-1);//mA

+disp(Io*10^6,"Reverse saturation current in nA : ");

diff --git a/2198/CH2/EX2.9.3/Ex2_9_3.sce b/2198/CH2/EX2.9.3/Ex2_9_3.sce
new file mode 100755
index 000000000..241836c17
--- /dev/null
+++ b/2198/CH2/EX2.9.3/Ex2_9_3.sce
@@ -0,0 +1,12 @@
+//Ex 2.9.3

+clc;clear;close;

+format('v',6);

+

+//Given : 

+Io=1*10^-9;//A

+T=27+273;//K

+VT=T/11600;//V

+VF=0.3;//volts

+Eta=1;//for Ge diode

+IF=Io*(exp(VF/Eta/VT)-1);//mA

+disp(IF*10^3,"Forwad current in mA : ");

diff --git a/2198/CH2/EX2.9.4/Ex2_9_4.sce b/2198/CH2/EX2.9.4/Ex2_9_4.sce
new file mode 100755
index 000000000..cfd7c6f28
--- /dev/null
+++ b/2198/CH2/EX2.9.4/Ex2_9_4.sce
@@ -0,0 +1,16 @@
+//Ex 2.9.4

+clc;clear;close;

+format('v',8);

+

+//Given : 

+T=27+273;//K

+V1=0.4;//V

+V2=0.42;//V

+I1=10;//mA

+I2=20;//mA

+VT=T/11600;//V

+Eta=1/log(I1/I2)*(V1-V2)/VT

+disp(Eta,"Value of Eta : ");

+Io=I1/(exp(V1/Eta/VT)-1)*10^-3;//A

+disp(Io*10^9,"Current, Io in nA : ");

+//Ans in the book is not accurate.

diff --git a/2198/CH2/EX2.9.5/Ex2_9_5.sce b/2198/CH2/EX2.9.5/Ex2_9_5.sce
new file mode 100755
index 000000000..3284fb172
--- /dev/null
+++ b/2198/CH2/EX2.9.5/Ex2_9_5.sce
@@ -0,0 +1,15 @@
+//Ex 2.9.5

+clc;clear;close;

+format('v',8);

+

+//Given : 

+Io1=10^-12;//A

+Io2=10^-10;//A

+I=2;//mA

+Eta=1;//constant

+T=27+273;//K

+VT=26/1000;//V

+//I=I1+I2

+V=(log(I*10^-3/(Io1+Io2))+1)*Eta*VT;//V

+disp(V,"Voltage across the diodes in V : ");

+//Ans in the book is not accurate.

diff --git a/2198/CH2/EX2.9.6/Ex2_9_6.sce b/2198/CH2/EX2.9.6/Ex2_9_6.sce
new file mode 100755
index 000000000..ca35fae3c
--- /dev/null
+++ b/2198/CH2/EX2.9.6/Ex2_9_6.sce
@@ -0,0 +1,15 @@
+//Ex 2.9.6

+clc;clear;close;

+format('v',8);

+

+//Given : 

+Io1=10*10^-9;//A

+Io2=10*10^-9;//A

+Eta=1.1;//constant

+T=25+273;//K

+V=0.2;//V(assumed)

+VT=T/11600;//V

+I1=Io1*(exp(V/Eta/VT)-1);//A

+I2=Io2*(exp(V/Eta/VT)-1);//A

+I=I1+I2;//A

+disp(I*10^6,"Source current in micro Ampere : ");

diff --git a/2198/CH2/EX2.9.7/Ex2_9_7.sce b/2198/CH2/EX2.9.7/Ex2_9_7.sce
new file mode 100755
index 000000000..50c20a4be
--- /dev/null
+++ b/2198/CH2/EX2.9.7/Ex2_9_7.sce
@@ -0,0 +1,18 @@
+//Ex 2.9.7

+clc;clear;close;

+format('v',8);

+

+//Given : 

+Io=10^-13;//A

+T=27+273;//K

+Eta=1;//constant

+V=0.6;//V

+VT=26/1000;//V

+I3=Io*(exp(V/Eta/VT)-1);//A

+R=1*1000;//ohm

+Ir=V/R;//A

+Itotal=I3+Ir;//A

+VD1=log(Itotal/Io)*Eta*VT;//V

+VD2=VD1;//V

+Vin=VD1+VD2+V;//V

+disp(Vin,"Voltage Vin(V) : ");

diff --git a/2198/CH2/EX2.9.8/Ex2_9_8.sce b/2198/CH2/EX2.9.8/Ex2_9_8.sce
new file mode 100755
index 000000000..84a6d5fb9
--- /dev/null
+++ b/2198/CH2/EX2.9.8/Ex2_9_8.sce
@@ -0,0 +1,24 @@
+//Ex 2.9.8

+clc;clear;close;

+format('v',8);

+

+//Given : 

+Vs=10;//V

+disp("Case(i) : Vb=9.8V");

+Vb=9.8;//V

+//D1 forward & D2 reverse biased: Breakdown D2

+VD2=Vb;//V

+VD1=Vs-Vb;//V

+disp(VD1,"VD1(V) : ");

+disp(VD2,"VD2(V) : ");

+disp("Case(ii) : Vb=10.2V");

+Vb=10.2;//V

+//D1 forward & D2 reverse biased: none will be breakdown

+VD2=Vb;//V

+//I=I0 so exp(V1/Eta/VT)-1=1

+Eta=1;//constant

+VT=26/1000;//V

+VD1=log(1+1)*Eta*VT;//V

+VD2=Vs-VD1;//V

+disp(VD1,"VD1(V) : ");

+disp(VD2,"VD2(V) : ");

diff --git a/2198/CH2/EX2.9.9/Ex2_9_9.sce b/2198/CH2/EX2.9.9/Ex2_9_9.sce
new file mode 100755
index 000000000..8b352d255
--- /dev/null
+++ b/2198/CH2/EX2.9.9/Ex2_9_9.sce
@@ -0,0 +1,13 @@
+//Ex 2.9.9

+clc;clear;close;

+format('v',8);

+

+//Given : 

+Vs=5;//Volt

+Eta=1;//constant

+VT=26/1000;//V

+//I=I0 so exp(V1/Eta/VT)-1=1

+V1=log(1+1)*Eta*VT;//Volt

+V2=Vs-V1;//volt

+disp(V1,"Voltage across diode D1 in V : ");

+disp(V2,"Voltage across diode D2 in V : ");

diff --git a/2198/CH5/EX5.6.1/Ex5_6_1.sce b/2198/CH5/EX5.6.1/Ex5_6_1.sce
new file mode 100755
index 000000000..9b9fe1cb9
--- /dev/null
+++ b/2198/CH5/EX5.6.1/Ex5_6_1.sce
@@ -0,0 +1,17 @@
+//Ex 5.6.1

+clc;clear;close;

+format('v',6);

+

+//Given : 

+VTN=0.7;//V

+W=45;//micro m

+L=4;//micro m

+mu_n=700;//cm^2/V-s

+t_ox=450;//Angstrum

+epsilon_ox=3.9*8.85*10^-14;//F/cm

+VGS=2*VTN;//V

+Kn=(W*10^-4)*mu_n*epsilon_ox/(2*(L*10^-4)*(t_ox*10^-8));//A/V^2

+Kn=Kn*10^3;//mA/V^2

+ID=Kn*(VGS-VTN)^2;//A

+disp(ID,"Current in mA : ");

+//Answer is wrong in the book. Calculation mistake whle calculating value for Kn.