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+//Ex 1.16.8
+clc;clear;close;
+format('v',9);
+
+//Given : 
+T=300;//K
+ni=2.5*10^13;//per cm^3
+mu_n=3800;//cm^2/V-s
+mu_p=1800;//cm^2/V-s
+q=1.6*10^-19;//Coulomb
+sigma_i=ni*(mu_n+mu_p)*q/10^-2;//(ohm-m)^-1
+disp(sigma_i,"Conductivity of intrinsic Ge in (ohm-m)^-1 : ");
+ND=4.4*10^22/10^7;//per cm^3
+n=ND;//per cm^3
+sigma_n=n*mu_n*q/10^-2;//(ohm-m)^-1
+disp(sigma_n,"Conductivity after adding donor impurity in (ohm-m)^-1 : ");
+NA=4.4*10^22/10^7;//per cm^3
+p=NA;//per cm^3
+sigma_p=p*mu_p*q/10^-2;//(ohm-m)^-1
+disp(sigma_p,"Conductivity after adding acceptor impurity in (ohm-m)^-1 : ");