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+// Exa 2.10
+clc;
+clear;
+close;
+// Given data
+ni= 1.8*10^15;// in /m^3
+rho= 2*10^5;// in Ωm
+q=1.6*10^-19;// in C
+dopingConcentration= 10^25;// in /m^3
+n=dopingConcentration;
+MCC= ni^2/dopingConcentration; // Minority carrier concentration per cube meter
+miu_n= 1/(2*rho*q*ni);// in m^3/Vs
+disp(miu_n,"The value of µn in m^3/Vs is : ")
+
+// Part (b)
+sigma= q*n*miu_n;//in (Ωm)^-1
+rho= 1/sigma;// in Ωm
+disp(rho,"Resistivity in Ωm is : ")
+
+// Part(c)
+kT= 26*10^-3;//in V
+no= n;// in /m^3
+Shift_inFermiLevel= kT*log(no/ni);// in eV
+disp(Shift_inFermiLevel,"Shift in Fermi level due to doping in eV is :")
+disp("Hence, E_F lies "+string(Shift_inFermiLevel)+" eV above Fermi level Ei")
+
+// Part (d)
+MCC= ni^2/dopingConcentration; // Minority carrier concentration per cube meter
+disp(MCC,"Minority carrier concentration per cube meter when its temperature is increased is : ")