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Diffstat (limited to '1826/CH10/EX10.10/ex10_10.sce')
| -rwxr-xr-x | 1826/CH10/EX10.10/ex10_10.sce | 16 |
1 files changed, 16 insertions, 0 deletions
diff --git a/1826/CH10/EX10.10/ex10_10.sce b/1826/CH10/EX10.10/ex10_10.sce new file mode 100755 index 000000000..68d13b390 --- /dev/null +++ b/1826/CH10/EX10.10/ex10_10.sce @@ -0,0 +1,16 @@ +// Example 10.9, page no-273
+clear
+clc
+e=1.6*10^-19//C
+m=9.1*10^-31//kg
+h=6.626*10^-34
+k=1.38*10^-23
+eg=1.1*e
+mue=0.48//m^2/V.s
+muh=0.013//m^2/V.s
+T=300//K
+ni=2*(2*%pi*m*k*T/(h^(2)))^(1.5)
+ni=ni*%e^(-eg/(2*k*T))
+
+sig=ni*e*(mue+muh)
+printf("\nThe carrier concentration of an intrinsic semiconductor is = %.2f*10^16 per m^3\n the electrical conductiivity od Si is %.3f*10^-3 per Ohm-m",ni*10^-16,sig*10^3)
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