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-rwxr-xr-x181/CH6/EX6.1/example6_1.sce24
-rwxr-xr-x181/CH6/EX6.1/example6_1.txt3
-rwxr-xr-x181/CH6/EX6.10/example6_10.sce25
-rwxr-xr-x181/CH6/EX6.10/example6_10.txt2
-rwxr-xr-x181/CH6/EX6.11/example6_11.sce22
-rwxr-xr-x181/CH6/EX6.11/example6_11.txt1
-rwxr-xr-x181/CH6/EX6.12/example6_12.sce22
-rwxr-xr-x181/CH6/EX6.12/example6_12.txt4
-rwxr-xr-x181/CH6/EX6.13/example6_13.sce28
-rwxr-xr-x181/CH6/EX6.13/example6_13.txt4
-rwxr-xr-x181/CH6/EX6.14/example6_14.sce26
-rwxr-xr-x181/CH6/EX6.14/example6_14.txt4
-rwxr-xr-x181/CH6/EX6.15/example6_15.sce23
-rwxr-xr-x181/CH6/EX6.15/example6_15.txt2
-rwxr-xr-x181/CH6/EX6.16/example6_16.sce25
-rwxr-xr-x181/CH6/EX6.16/example6_16.txt3
-rwxr-xr-x181/CH6/EX6.17/example6_17.sce25
-rwxr-xr-x181/CH6/EX6.17/example6_17.txt3
-rwxr-xr-x181/CH6/EX6.18/example6_18.sce30
-rwxr-xr-x181/CH6/EX6.18/example6_18.txt4
-rwxr-xr-x181/CH6/EX6.19/example6_19.sce29
-rwxr-xr-x181/CH6/EX6.19/example6_19.txt4
-rwxr-xr-x181/CH6/EX6.2/example6_2.sce26
-rwxr-xr-x181/CH6/EX6.2/example6_2.txt2
-rwxr-xr-x181/CH6/EX6.20/example6_20.sce26
-rwxr-xr-x181/CH6/EX6.20/example6_20.txt3
-rwxr-xr-x181/CH6/EX6.21/example6_21.sce30
-rwxr-xr-x181/CH6/EX6.21/example6_21.txt6
-rwxr-xr-x181/CH6/EX6.3/example6_3.sce26
-rwxr-xr-x181/CH6/EX6.3/example6_3.txt2
-rwxr-xr-x181/CH6/EX6.4/example6_4.sce35
-rwxr-xr-x181/CH6/EX6.4/example6_4.txt7
-rwxr-xr-x181/CH6/EX6.5/example6_5.sce30
-rwxr-xr-x181/CH6/EX6.5/example6_5.txt4
-rwxr-xr-x181/CH6/EX6.6/example6_6.sce29
-rwxr-xr-x181/CH6/EX6.6/example6_6.txt4
-rwxr-xr-x181/CH6/EX6.7/example6_7.sce31
-rwxr-xr-x181/CH6/EX6.7/example6_7.txt3
-rwxr-xr-x181/CH6/EX6.8/example6_8.sce32
-rwxr-xr-x181/CH6/EX6.8/example6_8.txt6
-rwxr-xr-x181/CH6/EX6.9/example6_9.sce27
-rwxr-xr-x181/CH6/EX6.9/example6_9.txt4
42 files changed, 646 insertions, 0 deletions
diff --git a/181/CH6/EX6.1/example6_1.sce b/181/CH6/EX6.1/example6_1.sce
new file mode 100755
index 000000000..74590ca91
--- /dev/null
+++ b/181/CH6/EX6.1/example6_1.sce
@@ -0,0 +1,24 @@
+// Determine approximate drain-source resistance
+// Basic Electronics
+// By Debashis De
+// First Edition, 2010
+// Dorling Kindersley Pvt. Ltd. India
+// Example 6-1 in page 274
+
+clear; clc; close;
+
+// Given data
+I_ds=10*10^-3; // Drain current in mA
+Vp=-2; // Peak voltage in V
+Vgs=[0 -0.5]; // Values of Vgs in V
+
+// Calculation
+alp=[1 2];
+for i=1:2
+ r=Vp^2/(2*I_ds*(Vgs(i)-Vp));
+ printf("(%0.0f)r_ds when Vgs = %d V is %0.2f ohm\n",alp(i),Vgs(i),r);
+end
+
+// Result
+// (a) When Vgs = 0 V, r_ds = 100 ohms
+// (b) When Vgs = 0.5 V, r_ds = 133.33 ohms \ No newline at end of file
diff --git a/181/CH6/EX6.1/example6_1.txt b/181/CH6/EX6.1/example6_1.txt
new file mode 100755
index 000000000..db5179362
--- /dev/null
+++ b/181/CH6/EX6.1/example6_1.txt
@@ -0,0 +1,3 @@
+(1)r_ds when Vgs = 0 V is 100.00 ohm
+(2)r_ds when Vgs = 0 V is 133.33 ohm
+ \ No newline at end of file
diff --git a/181/CH6/EX6.10/example6_10.sce b/181/CH6/EX6.10/example6_10.sce
new file mode 100755
index 000000000..5e26dd267
--- /dev/null
+++ b/181/CH6/EX6.10/example6_10.sce
@@ -0,0 +1,25 @@
+// Find pinch off,saturation voltage
+// Basic Electronics
+// By Debashis De
+// First Edition, 2010
+// Dorling Kindersley Pvt. Ltd. India
+// Example 6-10 in page 279
+
+clear; clc; close;
+
+// Given data
+Nd=3*10^21; // Donor concentration in /m^3
+epsln=12; // Dielectric constant of silicon
+epsln_0=12*8.85*10^-12; // Constant of calculation
+e=1.6*10^-19; // Charge on an electron in C
+a=2*10^-6; // Constant of calculation
+
+// Calculation
+Vp=(e*Nd*(a)^2)/(2*epsln_0);
+printf("(a)Pinch off voltage = %0.3f V\n",Vp);
+Vds=Vp-2;
+printf("(b)Saturation voltage = %0.3f V",Vds);
+
+// Result
+// (a) Pinch off voltage = 9.040 V
+// (b) Saturation voltage = 7.040 V \ No newline at end of file
diff --git a/181/CH6/EX6.10/example6_10.txt b/181/CH6/EX6.10/example6_10.txt
new file mode 100755
index 000000000..e8bb7be6e
--- /dev/null
+++ b/181/CH6/EX6.10/example6_10.txt
@@ -0,0 +1,2 @@
+(a)Pinch off voltage = 9.040 V
+(b)Saturation voltage = 7.040 V \ No newline at end of file
diff --git a/181/CH6/EX6.11/example6_11.sce b/181/CH6/EX6.11/example6_11.sce
new file mode 100755
index 000000000..dbc2f577b
--- /dev/null
+++ b/181/CH6/EX6.11/example6_11.sce
@@ -0,0 +1,22 @@
+// Determine drain-source resistance
+// Basic Electronics
+// By Debashis De
+// First Edition, 2010
+// Dorling Kindersley Pvt. Ltd. India
+// Example 6-11 in page 287
+
+clear; clc; close;
+
+// Given data
+Ids=10*10^-3; // Drain current in mA
+Vp=-2; // Peak voltage in V
+Vgs=[1 2]; // Gate-source voltage in V
+
+// Calculation
+for i=1:2
+ rds=Vp^2/(2*Ids*(Vgs(i)-Vp));
+ printf("Rds = %0.1f ohm\n",rds);
+end
+
+// Result
+// Rds = 66.7 ohm, 50 ohm \ No newline at end of file
diff --git a/181/CH6/EX6.11/example6_11.txt b/181/CH6/EX6.11/example6_11.txt
new file mode 100755
index 000000000..8d65f862e
--- /dev/null
+++ b/181/CH6/EX6.11/example6_11.txt
@@ -0,0 +1 @@
+Rds = 66.7 ohm, 50 ohm \ No newline at end of file
diff --git a/181/CH6/EX6.12/example6_12.sce b/181/CH6/EX6.12/example6_12.sce
new file mode 100755
index 000000000..2876aa285
--- /dev/null
+++ b/181/CH6/EX6.12/example6_12.sce
@@ -0,0 +1,22 @@
+// Determine approximate Rds
+// Basic Electronics
+// By Debashis De
+// First Edition, 2010
+// Dorling Kindersley Pvt. Ltd. India
+// Example 6-12 in page 287
+
+clear; clc; close;
+
+// Given data
+K=0.25*10^-3; // Constant in mA/V^2
+Vt=2; // Voltage in V
+Vgs=[4 6 10]; // Drain-source voltage in V
+
+// Calculation
+for i=1:3
+ rds=1/(2*K*(Vgs(i)-Vt));
+ printf("Rds = %0.0f ohm\n",rds);
+end
+
+// Result
+// Rds = 1 K-ohm, 500 ohm, 250 ohm \ No newline at end of file
diff --git a/181/CH6/EX6.12/example6_12.txt b/181/CH6/EX6.12/example6_12.txt
new file mode 100755
index 000000000..f2bb0eb9c
--- /dev/null
+++ b/181/CH6/EX6.12/example6_12.txt
@@ -0,0 +1,4 @@
+ Rds = 1000 ohm
+Rds = 500 ohm
+Rds = 250 ohm
+ \ No newline at end of file
diff --git a/181/CH6/EX6.13/example6_13.sce b/181/CH6/EX6.13/example6_13.sce
new file mode 100755
index 000000000..1565dd6bd
--- /dev/null
+++ b/181/CH6/EX6.13/example6_13.sce
@@ -0,0 +1,28 @@
+// Find Vgs,operating region,Id,Rd
+// Basic Electronics
+// By Debashis De
+// First Edition, 2010
+// Dorling Kindersley Pvt. Ltd. India
+// Example 6-13 in page 288
+
+clear; clc; close;
+
+// Given data
+Vdd=10; // Drain voltage in in V
+Vds=6; // Drain-source voltage in V
+K=0.2*10^-3; // Constant in mA/V^2
+Vt=1; // Voltage given
+
+// Calculation
+Vgs=Vds;
+printf("(a)Vgs = %0.0f V\n",Vgs);
+printf("Vds=6V>Vgs-Vt=5V\n");
+Id=K*(Vgs-Vt)^2;
+Rd=(Vdd-Vds)/Id;
+printf("(b)Id = %0.0e A\n",Id);
+printf("(c)Rd = %0.0f ohms",Rd);
+
+// Result
+// (a) Vgs = 6 V
+// (b) Id = 5 mA
+// (c) Rd = 800 ohms \ No newline at end of file
diff --git a/181/CH6/EX6.13/example6_13.txt b/181/CH6/EX6.13/example6_13.txt
new file mode 100755
index 000000000..8e0e4822e
--- /dev/null
+++ b/181/CH6/EX6.13/example6_13.txt
@@ -0,0 +1,4 @@
+(a)Vgs = 6 V
+Vds=6V>Vgs-Vt=5V
+(b)Id = 5e-003 A
+(c)Rd = 800 ohms \ No newline at end of file
diff --git a/181/CH6/EX6.14/example6_14.sce b/181/CH6/EX6.14/example6_14.sce
new file mode 100755
index 000000000..868ad1c58
--- /dev/null
+++ b/181/CH6/EX6.14/example6_14.sce
@@ -0,0 +1,26 @@
+// Find operating region,Vgs,Vds,Rd
+// Basic Electronics
+// By Debashis De
+// First Edition, 2010
+// Dorling Kindersley Pvt. Ltd. India
+// Example 6-14 in page 288
+
+clear; clc; close;
+
+// Given data
+K=0.2*10^-3; // Constant in mA/V^2
+Vt=1; // Given voltage in V
+Vdd=10; // Drain voltage in V
+Id=3.2*10^-3; // Drain current in mA
+
+// Calculation
+printf("Vds=Vgs>Vgs-Vt=Active region operation\n");
+Vgs=Vt+sqrt(Id/K);
+Vds=Vgs;
+Rd=(Vdd-Vds)/Id;
+printf("(a)Vgs = %0.0f V,\n(b)Vds = %0.0f V,\n(c)Rd = %0.2e ohm",Vgs,Vds,Rd);
+
+// Result
+// (a) Vgs = 5 V
+// (b) Vds = 5 V
+// (c) Rd = 1.56 K-ohms \ No newline at end of file
diff --git a/181/CH6/EX6.14/example6_14.txt b/181/CH6/EX6.14/example6_14.txt
new file mode 100755
index 000000000..f7049c201
--- /dev/null
+++ b/181/CH6/EX6.14/example6_14.txt
@@ -0,0 +1,4 @@
+ Vds=Vgs>Vgs-Vt=Active region operation
+(a)Vgs = 5 V,
+(b)Vds = 5 V,
+(c)Rd = 1.56e+003 ohm \ No newline at end of file
diff --git a/181/CH6/EX6.15/example6_15.sce b/181/CH6/EX6.15/example6_15.sce
new file mode 100755
index 000000000..7735fb0a5
--- /dev/null
+++ b/181/CH6/EX6.15/example6_15.sce
@@ -0,0 +1,23 @@
+// Find Id when Vgs=4V
+// Basic Electronics
+// By Debashis De
+// First Edition, 2010
+// Dorling Kindersley Pvt. Ltd. India
+// Example 6-15 in page 288
+
+clear; clc; close;
+
+// Given data
+K=0.15*10^-3; // Constant in mA/V^2
+Vt=2; // Given voltgae in V
+Vdd=12; // Drain voltage in V
+Vgs=4; // Gate-source voltage in V
+
+// Calculation
+Vgg=sqrt(5.4/0.15)+2;
+Id=K*(Vgs-Vt)^2;
+printf("(a)Vgg = %0.0f V,\n(b)Id = %0.1e A",Vgg,Id);
+
+// Result
+// (a) Vgg = 8 V
+// (b) Id = 0.6 mA \ No newline at end of file
diff --git a/181/CH6/EX6.15/example6_15.txt b/181/CH6/EX6.15/example6_15.txt
new file mode 100755
index 000000000..dc19f101d
--- /dev/null
+++ b/181/CH6/EX6.15/example6_15.txt
@@ -0,0 +1,2 @@
+(a)Vgg = 8 V,
+(b)Id = 6.0e-004 A \ No newline at end of file
diff --git a/181/CH6/EX6.16/example6_16.sce b/181/CH6/EX6.16/example6_16.sce
new file mode 100755
index 000000000..cb9458ce9
--- /dev/null
+++ b/181/CH6/EX6.16/example6_16.sce
@@ -0,0 +1,25 @@
+// Determine Rd
+// Basic Electronics
+// By Debashis De
+// First Edition, 2010
+// Dorling Kindersley Pvt. Ltd. India
+// Example 6-16 in page 289
+
+clear; clc; close;
+
+// Given data
+K=0.25*10^-3; // Constant in mA/V^2
+Vt=2; // Voltage given in V
+Vdd=16; // Drain voltage in V
+Vgg=[4 10]; // Gate voltage values in V
+
+// Calculation
+for i=1:2
+ id=K*(Vgg(i)-2)^2;
+ rd=(16-(Vgg(i)-2))/id;
+ printf("Rd when Vgg is %d V = %0.1e ohm\n",Vgg(i),rd);
+end
+
+// Result
+// (a) Rd = 14 K-ohm
+// (b) 500 ohm \ No newline at end of file
diff --git a/181/CH6/EX6.16/example6_16.txt b/181/CH6/EX6.16/example6_16.txt
new file mode 100755
index 000000000..858649f78
--- /dev/null
+++ b/181/CH6/EX6.16/example6_16.txt
@@ -0,0 +1,3 @@
+ Rd when Vgg is 4 V = 1.4e+004 ohm
+Rd when Vgg is 10 V = 5.0e+002 ohm
+ \ No newline at end of file
diff --git a/181/CH6/EX6.17/example6_17.sce b/181/CH6/EX6.17/example6_17.sce
new file mode 100755
index 000000000..b64548359
--- /dev/null
+++ b/181/CH6/EX6.17/example6_17.sce
@@ -0,0 +1,25 @@
+// Determine Rd
+// Basic Electronics
+// By Debashis De
+// First Edition, 2010
+// Dorling Kindersley Pvt. Ltd. India
+// Example 6-17 in page 289
+
+clear; clc; close;
+
+// Given data
+K=0.25*10^-3; // Constant in mA/V^2;
+Vt=2; // Given voltage in V
+Rd=1*10^3; // Drain resistance in ohms
+Vdd=16; // Drain voltage in V
+Vgg=4; // Gate voltage in V
+
+// Calculation
+id=K*(4-Vt)^2;
+Vd=(-1*10^3*id)+16;
+printf("(a)Id = %0.0e A,\n(b)Vd = %0.0f V\n",id,Vd);
+printf("Since Vds=15>Vgs-Vt=2,active region operation is confirmed");
+
+// Result
+// (a) Id = 1 mA
+// (b) Vds = 15 V \ No newline at end of file
diff --git a/181/CH6/EX6.17/example6_17.txt b/181/CH6/EX6.17/example6_17.txt
new file mode 100755
index 000000000..d353c119f
--- /dev/null
+++ b/181/CH6/EX6.17/example6_17.txt
@@ -0,0 +1,3 @@
+(a)Id = 1e-003 A,
+(b)Vd = 15 V
+Since Vds=15>Vgs-Vt=2,active region operation is confirmed \ No newline at end of file
diff --git a/181/CH6/EX6.18/example6_18.sce b/181/CH6/EX6.18/example6_18.sce
new file mode 100755
index 000000000..7dc76ea46
--- /dev/null
+++ b/181/CH6/EX6.18/example6_18.sce
@@ -0,0 +1,30 @@
+// Find Id,Vds1,Vds2
+// Basic Electronics
+// By Debashis De
+// First Edition, 2010
+// Dorling Kindersley Pvt. Ltd. India
+// Example 6-18 in page 289
+
+clear; clc; close;
+
+// Given data
+Ids1=8*10-3; // Drain-source current of M1 in mA
+Vp=-4; // Peak voltage in V
+Ids2=16*10^-3; // Drain-source current of M2 in mA
+Vdd=11; // Drain voltage in V
+Vgg=10; // Gate voltage in V
+
+// Calculation
+Id=Ids2;
+printf("(a)Id = %0.2e A\n",Id);
+Vds=(28+sqrt(28^2-128))/2;
+Vds1=(28-sqrt(28^2-128))/2;
+printf("(b)Vds1 = %0.2f V, %0.2f V\n",Vds,Vds1);
+printf("For ohmic operation Vds1 = 1.19 V\n");
+Vds2=Vdd-1.19;
+printf("(c)Vds2 = %0.2f V",Vds2);
+
+// Result
+// (a) Id = 16 mA
+// (b) Vds1 = 1.19 V
+// (c) Vds2 = 9.81 V \ No newline at end of file
diff --git a/181/CH6/EX6.18/example6_18.txt b/181/CH6/EX6.18/example6_18.txt
new file mode 100755
index 000000000..1fc0190bb
--- /dev/null
+++ b/181/CH6/EX6.18/example6_18.txt
@@ -0,0 +1,4 @@
+(a)Id = 1.60e-002 A
+(b)Vds1 = 26.81 V, 1.19 V
+For ohmic operation Vds1 = 1.19 V
+(c)Vds2 = 9.81 V \ No newline at end of file
diff --git a/181/CH6/EX6.19/example6_19.sce b/181/CH6/EX6.19/example6_19.sce
new file mode 100755
index 000000000..aed11e4f0
--- /dev/null
+++ b/181/CH6/EX6.19/example6_19.sce
@@ -0,0 +1,29 @@
+// Find operating region,Vgs,Vds,Id
+// Basic Electronics
+// By Debashis De
+// First Edition, 2010
+// Dorling Kindersley Pvt. Ltd. India
+// Example 6-19 in page 290
+
+clear; clc; close;
+
+// Given data
+Ids = 4*10^-3; // Drain-source current in mA
+Vp=-4; // Peak voltage in V
+Vdd=10; // Drain voltage in V
+Rd=1*10^3; // Drain resistance in K-ohms
+
+// Calculation
+printf("(a)Vd=Vgs<Vgs-Vp.Hence ohmic region operation is confirmed\n");
+Vgs1=(-12+sqrt(12^2+160))/2;
+Vgs2=(-12-sqrt(12^2+160))/2;
+printf("(b)Vgs = %0.2f V,%0.2f V\n",Vgs1,Vgs2);
+Vds=Vgs1;
+id=(10-Vds)/(1*10^3);
+printf("(c)Vds = %0.2f V,\n(d)Id = %0.2e A",Vds,id);
+
+// Result
+// (a) Ohmic region operation is confirmed
+// (b) Vgs = 2.72V
+// (c) Vds = 2.72V
+// (d) Id = 7.28mA \ No newline at end of file
diff --git a/181/CH6/EX6.19/example6_19.txt b/181/CH6/EX6.19/example6_19.txt
new file mode 100755
index 000000000..56dfb69b2
--- /dev/null
+++ b/181/CH6/EX6.19/example6_19.txt
@@ -0,0 +1,4 @@
+(a)Vd=Vgs<Vgs-Vp.Hence ohmic region operation is confirmed
+(b)Vgs = 2.72 V,-14.72 V
+(c)Vds = 2.72 V,
+(d)Id = 7.28e-003 A \ No newline at end of file
diff --git a/181/CH6/EX6.2/example6_2.sce b/181/CH6/EX6.2/example6_2.sce
new file mode 100755
index 000000000..4e87880c6
--- /dev/null
+++ b/181/CH6/EX6.2/example6_2.sce
@@ -0,0 +1,26 @@
+// Find Id and Vds
+// Basic Electronics
+// By Debashis De
+// First Edition, 2010
+// Dorling Kindersley Pvt. Ltd. India
+// Example 6-2 in page 274
+
+clear; clc; close;
+
+// Given data
+Ids=12*10^-3; // Drain current in mA
+Vp=-4; // Peak voltage in V
+Vgs=-2; // Gate to source voltage in V
+Rd=3*10^3; // Drain resistance in K-ohms
+Vcc=15; // Supply voltage in V
+
+// Calculation
+id=Ids*(1-(Vgs/Vp))^2;
+Vds=-id*Rd+Vcc;
+
+printf("(a)Id = %0.0e A\n",id);
+printf("(b)Vds = %0.0f V",Vds);
+
+// Result
+// (a) Id = 3mA
+// (b) Vds = 6V \ No newline at end of file
diff --git a/181/CH6/EX6.2/example6_2.txt b/181/CH6/EX6.2/example6_2.txt
new file mode 100755
index 000000000..95b2b16dc
--- /dev/null
+++ b/181/CH6/EX6.2/example6_2.txt
@@ -0,0 +1,2 @@
+(a)Id = 3e-003 A
+(b)Vds = 6 V \ No newline at end of file
diff --git a/181/CH6/EX6.20/example6_20.sce b/181/CH6/EX6.20/example6_20.sce
new file mode 100755
index 000000000..cb84f2a48
--- /dev/null
+++ b/181/CH6/EX6.20/example6_20.sce
@@ -0,0 +1,26 @@
+// Find Vgs,Id,operating region
+// Basic Electronics
+// By Debashis De
+// First Edition, 2010
+// Dorling Kindersley Pvt. Ltd. India
+// Example 6-20 in page 290
+
+clear; clc; close;
+
+// Given data
+Ids=4*10^-3; // Drain-source current in mA
+Vp=-4; // Peak voltage in V
+Vdd=10; // Drain voltage in V
+Vds=6; // Drain-source voltage in V
+
+// Calculation
+Vgs=Vds;
+printf("(a)Vgs = %0.0f V\n",Vgs);
+printf("(b)Vds=Vgs<Vgs-Vp.Hence ohmic region operation\n");
+Id=4*10^-3*((2*(5/2)*(3/2))-(9/4));
+printf("(c)Id = %0.1e A",Id);
+
+// Result
+// (a) Vgs = 6 V
+// Ohmic region operation is confirmed
+// (c) Id = 21 mA \ No newline at end of file
diff --git a/181/CH6/EX6.20/example6_20.txt b/181/CH6/EX6.20/example6_20.txt
new file mode 100755
index 000000000..1a58c6c9d
--- /dev/null
+++ b/181/CH6/EX6.20/example6_20.txt
@@ -0,0 +1,3 @@
+(a)Vgs = 6 V
+(b)Vds=Vgs<Vgs-Vp.Hence ohmic region operation
+(c)Id = 2.1e-002 A \ No newline at end of file
diff --git a/181/CH6/EX6.21/example6_21.sce b/181/CH6/EX6.21/example6_21.sce
new file mode 100755
index 000000000..57aa0052a
--- /dev/null
+++ b/181/CH6/EX6.21/example6_21.sce
@@ -0,0 +1,30 @@
+// Find operating region,Vgs,Vds,Id
+// Basic Electronics
+// By Debashis De
+// First Edition, 2010
+// Dorling Kindersley Pvt. Ltd. India
+// Example 6-21 in page 290
+
+clear; clc; close;
+
+// Given data
+K=0.2*10^-3; // Constant in mA/V^2
+Vt=1; // Voltage in V
+Vdd=10; // Drain voltage in V
+Rd=1*10^3; // Drain resistance in ohms
+
+// Calculation
+printf("(a)Vds=Vgs>Vgs-Vt.Hence active region operation\n");
+printf("0.2*Vgs^2+0.6*Vgs-9.8=0\n");
+Vgs1=(-0.6+sqrt(0.6^2-4*0.2*-9.8))/(2*0.2);
+Vgs2=(-0.6-sqrt(0.6^2-4*0.2*-9.8))/(2*0.2);
+printf("(b)Vgs = %0.2f V or %0.2f V\n",Vgs1,Vgs2);
+printf("Since 0<Vgs<10, Vgs = %0.2f V\n",Vgs1);
+Id=(Vdd-5.66)/Rd;
+printf("(c)Vds = Vgs = 5.66 V\n(d)Id = %0.2e A",Id);
+
+//Result
+// (a) The region of operation is active
+// (b) Vgs = 5.66 V
+// (c) Vds = 5.66 V
+// (c) Id = 4.34 mA \ No newline at end of file
diff --git a/181/CH6/EX6.21/example6_21.txt b/181/CH6/EX6.21/example6_21.txt
new file mode 100755
index 000000000..35183224b
--- /dev/null
+++ b/181/CH6/EX6.21/example6_21.txt
@@ -0,0 +1,6 @@
+(a)Vds=Vgs>Vgs-Vt.Hence active region operation
+0.2*Vgs^2+0.6*Vgs-9.8=0
+(b)Vgs = 5.66 V or -8.66 V
+Since 0<Vgs<10, Vgs = 5.66 V
+(c)Vds = Vgs = 5.66 V
+(d)Id = 4.34e-003 A \ No newline at end of file
diff --git a/181/CH6/EX6.3/example6_3.sce b/181/CH6/EX6.3/example6_3.sce
new file mode 100755
index 000000000..b426dbc8d
--- /dev/null
+++ b/181/CH6/EX6.3/example6_3.sce
@@ -0,0 +1,26 @@
+// Find the value of Rd
+// Basic Electronics
+// By Debashis De
+// First Edition, 2010
+// Dorling Kindersley Pvt. Ltd. India
+// Example 6-3 in page 275
+
+clear; clc; close;
+
+// Given data
+Ids=12*10^-3; // Drain current in mA
+Vp=-4; // Peak voltage in V
+Rs=0; // Source resistance in ohms
+Vds=0.1; // Drain-source voltage in V
+Vgg=0; // Gate voltage in V
+
+// Calculation
+id=Ids*(50*10^-3-625*10^-6);
+Rd=(15-Vds)/id;
+
+printf("(a)i_d = %0.3e A\n",id);
+printf("(b)Rd = %0.3e ohm",Rd);
+
+// Result
+// (a) i_d = 592.6 mu-A
+// (b) Rd = 25.15 k-ohm \ No newline at end of file
diff --git a/181/CH6/EX6.3/example6_3.txt b/181/CH6/EX6.3/example6_3.txt
new file mode 100755
index 000000000..4a1e5ac27
--- /dev/null
+++ b/181/CH6/EX6.3/example6_3.txt
@@ -0,0 +1,2 @@
+ (a)i_d = 5.925e-004 A
+(b)Rd = 2.515e+004 ohm \ No newline at end of file
diff --git a/181/CH6/EX6.4/example6_4.sce b/181/CH6/EX6.4/example6_4.sce
new file mode 100755
index 000000000..a8badcbe0
--- /dev/null
+++ b/181/CH6/EX6.4/example6_4.sce
@@ -0,0 +1,35 @@
+// Find id,Vds,slope of operation of JFET
+// Basic Electronics
+// By Debashis De
+// First Edition, 2010
+// Dorling Kindersley Pvt. Ltd. India
+// Example 6-4 in page 275
+
+clear; clc; close;
+
+// Given data
+Ids=12*10^-3; // Drain current in mA
+Vp=-4; // Peak voltage in V
+Rd=1*10^3; // Drain resistance in k-ohm
+Vdd=15; // Drain voltage in V
+
+// Calculation
+Id=Ids;
+Vds=(-Rd*Id)+Vdd;
+printf("Id = %0.2e A\n",Id);
+printf("Vds = %0.0f V\n",Vds);
+printf("Consider it to be operating in the ohmic region\n");
+Vds1=(7+sqrt(49-45))/(3/2);
+Vds2=(7-sqrt(49-45))/(3/2);
+printf("Then Vds = %0.2f V,%0.2f V\n",Vds1,Vds2);
+printf("6V is neglected since it is lesser than -Vp\n");
+id=(15-Vds2)/(1*10^3);
+Vds=Vds2;
+printf("(a)Id = %0.3e A\n",id);
+printf("(b)Vds = %0.2f V",Vds);
+printf("Since Vds<Vgs-Vp,operation region is confirmed in the ohmic region");
+
+// Result
+// (a) Id = 11.67 mA
+// (b) Vds = 3.33 V
+// (c) Operation region is in the ohmic region \ No newline at end of file
diff --git a/181/CH6/EX6.4/example6_4.txt b/181/CH6/EX6.4/example6_4.txt
new file mode 100755
index 000000000..f938d5e80
--- /dev/null
+++ b/181/CH6/EX6.4/example6_4.txt
@@ -0,0 +1,7 @@
+Id = 1.20e-002 A
+Vds = 3 V
+Consider it to be operating in the ohmic region
+Then Vds = 6.00 V,3.33 V
+6V is neglected since it is lesser than -Vp
+(a)Id = 1.167e-002 A
+(b)Vds = 3.33 VSince Vds<Vgs-Vp,operation region is confirmed in the ohmic region \ No newline at end of file
diff --git a/181/CH6/EX6.5/example6_5.sce b/181/CH6/EX6.5/example6_5.sce
new file mode 100755
index 000000000..97e5a56b9
--- /dev/null
+++ b/181/CH6/EX6.5/example6_5.sce
@@ -0,0 +1,30 @@
+// Find id,Vgs,Rd,Vds
+// Basic Electronics
+// By Debashis De
+// First Edition, 2010
+// Dorling Kindersley Pvt. Ltd. India
+// Example 6-5 in page 276
+
+clear; clc; close;
+
+// Given data
+Ids=10*10^-3; // Drain current in mA
+Vp=-4; // Peak voltage in V
+Vdd=12; // Drain voltage in V
+Vgg=0; // Gate voltage in V
+
+// Calculation
+id=10*10^-3*(1-(2/4))^2;
+Vgs=(sqrt(9/10)-1)*4;
+Rd=(12-7.5)/(0.625*10^-3);
+Vds=12-2-(3*0.625);
+printf("(a)Id = %0.2e A\n",id);
+printf("(b)Vgs = %0.3f V\n",Vgs);
+printf("(c)Rd = %0.2e ohm\n",Rd);
+printf("(d)Vds = %0.3f V",Vds);
+
+// Result
+// (a) Id = 2.5 mA
+// Vgs = -0.205 V
+// (c) Rd = 7.2 k-ohm
+// (d) Vds = 8.125 V \ No newline at end of file
diff --git a/181/CH6/EX6.5/example6_5.txt b/181/CH6/EX6.5/example6_5.txt
new file mode 100755
index 000000000..54602e70c
--- /dev/null
+++ b/181/CH6/EX6.5/example6_5.txt
@@ -0,0 +1,4 @@
+ (a)Id = 2.50e-003 A
+(b)Vgs = -0.205 V
+(c)Rd = 7.20e+003 ohm
+(d)Vds = 8.125 V \ No newline at end of file
diff --git a/181/CH6/EX6.6/example6_6.sce b/181/CH6/EX6.6/example6_6.sce
new file mode 100755
index 000000000..af5e0e75c
--- /dev/null
+++ b/181/CH6/EX6.6/example6_6.sce
@@ -0,0 +1,29 @@
+// Determine Vgs,Id,Vds,operating region
+// Basic Electronics
+// By Debashis De
+// First Edition, 2010
+// Dorling Kindersley Pvt. Ltd. India
+// Example 6-6 in page 276
+
+clear; clc; close;
+
+// Given data
+Ids=16*10^-3; // Drain current in mA
+Vp=-4; // Peak voltage in V
+Vdd=18; // Drain voltage in V
+Rd=500; // Drain resistance in ohms
+
+// Calculation
+vgs1=(-10+sqrt(100-64))/2;
+vgs2=(-10-sqrt(100-64))/2;
+printf("(a)Vgs = %d V,%d V\n",vgs1,vgs2);
+id=-vgs1/500;
+Vds=18-((1*10^3)*(4*10^-3));
+printf("(b)id = %0.0e A\n",id);
+printf("(c)Vds = %0.0f V\n",Vds);
+printf("Saturation region operation is confirmed from above results");
+
+// Result
+// (a) Vgs = -2V
+// (b) Id = 4 mA,
+// (c) Vds = 14 V,
diff --git a/181/CH6/EX6.6/example6_6.txt b/181/CH6/EX6.6/example6_6.txt
new file mode 100755
index 000000000..2ba495b16
--- /dev/null
+++ b/181/CH6/EX6.6/example6_6.txt
@@ -0,0 +1,4 @@
+ (a)Vgs = -2 V,-8 V
+(b)id = 4e-003 A
+(c)Vds = 14 V
+Saturation region operation is confirmed from above results \ No newline at end of file
diff --git a/181/CH6/EX6.7/example6_7.sce b/181/CH6/EX6.7/example6_7.sce
new file mode 100755
index 000000000..378ef574b
--- /dev/null
+++ b/181/CH6/EX6.7/example6_7.sce
@@ -0,0 +1,31 @@
+// Determine Vgs,Id,Vds
+// Determine Vgs,Id,Vds,operating region
+// Basic Electronics
+// By Debashis De
+// First Edition, 2010
+// Dorling Kindersley Pvt. Ltd. India
+// Example 6-7 in page 277
+
+clear; clc; close;
+
+// Given data
+Ids=8*10^-3; // Drain current in mA
+Vp=-4; // Peak voltage in V
+Vdd=18; // Drain voltage in V
+Rd=8*10^3; // Drain resistance in K-ohms
+
+// Calculation
+vgs1=(-214+sqrt(214^2-(4*63*180)))/(2*63);
+vgs2=(-214-sqrt(214^2-(4*63*180)))/(2*63);
+printf("(a)Vgs = %0.2f V,%0.2f V\n",vgs1,vgs2);
+id1=-vgs1/(1*10^3);
+id2=-vgs2/(1*10^3);
+printf("(b)Id = %0.2e A,%0.2e A\n",id1,id2);
+Vds1=((-9*10^3)*id1)+18;
+Vds2=((-9*10^3)*id2)+18;
+printf("(c)Vds = %0.2f V,%0.2f V",Vds1,Vds2);
+
+// Result
+// (a) Vgs = -1.53 V,-1.86 V
+// (b) Id = 1.53 mA,1.86 mA
+// (c) Vds = 4.23 V,1.26 V \ No newline at end of file
diff --git a/181/CH6/EX6.7/example6_7.txt b/181/CH6/EX6.7/example6_7.txt
new file mode 100755
index 000000000..67b98a135
--- /dev/null
+++ b/181/CH6/EX6.7/example6_7.txt
@@ -0,0 +1,3 @@
+(a)Vgs = -1.53 V,-1.86 V
+(b)Id = 1.53e-003 A,1.86e-003 A
+(c)Vds = 4.21 V,1.22 V \ No newline at end of file
diff --git a/181/CH6/EX6.8/example6_8.sce b/181/CH6/EX6.8/example6_8.sce
new file mode 100755
index 000000000..fbd11f627
--- /dev/null
+++ b/181/CH6/EX6.8/example6_8.sce
@@ -0,0 +1,32 @@
+// Determine R,Ids,Vgs
+// Determine Vgs,Id,Vds,operating region
+// Basic Electronics
+// By Debashis De
+// First Edition, 2010
+// Dorling Kindersley Pvt. Ltd. India
+// Example 6-8 in page 277
+
+clear; clc; close;
+
+// Given data
+Vp=-3; // Peak voltage in V
+Vgg=5; // Gate voltage in V
+Ids=10*10^-3; // Drain current in mA
+
+// Calculation
+R=5/(10*10^-3);
+printf("(a)R = %0.0f ohm\n",R);
+Ids=5/400;
+Vds=(2*Ids*R)+15;
+printf("(b)Idss = %0.2e A\n",Ids);
+printf("(c)Vds = %0.0f V\n",Vds);
+printf("This confirms active region\n");
+Rid=14/2;
+Vgs=Vgg-Rid;
+printf("(d)Vgs = %0.0f V\n",Vgs);
+printf("Vds=2>Vgs-Vp=-1.5+3=1.5 -> Active region");
+
+// Result
+// (a) R = 500ohm,
+// (b) Ids = 12.5mA,
+// (c) Vgs = -2V \ No newline at end of file
diff --git a/181/CH6/EX6.8/example6_8.txt b/181/CH6/EX6.8/example6_8.txt
new file mode 100755
index 000000000..eee6983e4
--- /dev/null
+++ b/181/CH6/EX6.8/example6_8.txt
@@ -0,0 +1,6 @@
+ (a)R = 500 ohm
+(b)Idss = 1.25e-002 A
+(c)Vds = 28 V
+This confirms active region
+(d)Vgs = -2 V
+Vds=2>Vgs-Vp=-1.5+3=1.5 -> Active region \ No newline at end of file
diff --git a/181/CH6/EX6.9/example6_9.sce b/181/CH6/EX6.9/example6_9.sce
new file mode 100755
index 000000000..273bac7df
--- /dev/null
+++ b/181/CH6/EX6.9/example6_9.sce
@@ -0,0 +1,27 @@
+// Find Id,Vgs,Vds,region of operation
+// Basic Electronics
+// By Debashis De
+// First Edition, 2010
+// Dorling Kindersley Pvt. Ltd. India
+// Example 6-9 in page 277
+
+clear; clc; close;
+
+// Given data
+Idss=4*10^-3; // Drain current in mA
+Vp=-2; // Peak voltage in V
+Vdd=10; // Supply voltage in V
+Vgs=0; // Gate source voltage in V
+
+// Calculation
+Id=Idss*(1-(Vgs/Vp));
+printf("(a)Id = %0.0e A\n",Id);
+printf("(b)Since Id=Idss, Vgs=0 V\n");
+Vds=10-Vgs;
+printf("(c)Vds = %0.0f V\n",Vds);
+printf("Since Vds=10V>Vgs-Vp=2V,Active region operation of upper JFET is confirmed");
+
+// Result
+// (a) Id = 4 mA,
+// (b) Vgs = 0 V,
+// (c) Vds = 10 V \ No newline at end of file
diff --git a/181/CH6/EX6.9/example6_9.txt b/181/CH6/EX6.9/example6_9.txt
new file mode 100755
index 000000000..02d359c86
--- /dev/null
+++ b/181/CH6/EX6.9/example6_9.txt
@@ -0,0 +1,4 @@
+(a)Id = 4e-003 A
+(b)Since Id=Idss, Vgs=0 V
+(c)Vds = 10 V
+Since Vds=10V>Vgs-Vp=2V,Active region operation of upper JFET is confirmed \ No newline at end of file