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diff --git a/135/CH1/EX1.1/EX1.sce b/135/CH1/EX1.1/EX1.sce
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+// Example 1.1: Electron concentration
+clc, clear
+V=0.1; // Voltage in volts
+I=5e-3; // Current in ampere
+l_a=7e8; // Length to cross-sectional area ratio in metre inverse
+mu=0.05; // Electron mobility in metre square per volt second
+q=1.6e-19; // Charge on an electron in coulombs
+n=(l_a*I)/(V*q*mu); //Electron concentration in inverse metres cube
+n=n*1e-6; //Electron concentration in inverse centimetres cube
+disp(n,"Electon concentration (cm^-3) = ");
+\ No newline at end of file
diff --git a/135/CH1/EX1.2/EX2.sce b/135/CH1/EX1.2/EX2.sce
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+// Example 1.2: Electric field intensity, Voltage
+clc, clear
+l=3e-3; // Length of the bar in metres
+a=50*10*1e-12; // Cross-sectional area in metres square
+I=2e-6; // Current in amperes
+rho=2.3e3; // Resistivity in ohm metres
+E=I*rho/a; // Electric field intensity in volt per metres
+V=E*l; // Voltage across the bar in volt
+disp(E,"Electic field intensity (V/m) = ");
+disp(V,"Voltage across the bar (V) = ");
+\ No newline at end of file
diff --git a/135/CH1/EX1.3/EX3.sce b/135/CH1/EX1.3/EX3.sce
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+// Example 1.3: Electron concentration, Hole concentration, Conductivity, Voltage
+clc, clear
+l=3e-3; // Length on Si sample in metres
+a=5e-9; // Cross-sectional area of Si sample in metres square
+ND=5e20; // Donor concentration in inverse metres cube
+I=2e-6; // Current flowing through the bar in amperes
+ni=1.45e16; // Intrinsic carrier concentration in inverse metres cube
+mu_n=0.15; // Mobility of electrons in metres square per volt second
+q=1.6e-19; // Charge on an electron in coulombs
+n=ND; // Electron concentration in inverese metres cube
+p=ni*ni/n; // Hole concentration in inverese metres cube
+sigma=q*n*mu_n;  // Conductivity of Si sample in inverse ohm metres
+V=(I*l)/(a*sigma); // Voltage across the bar in volts
+n=n*1e-6; // Electron concentration in inverese centimetres cube
+p=p*1e-6; // Hole concentration in inverese centimetres cube
+sigma=sigma*0.01; // Conductivity of Si sample in inverse ohm centimetres
+disp(n,"Electron concentration (cm^-3) = ");
+disp(p,"Hole concentration (cm^-3) = ");
+disp(sigma,"Conductivity of Si sample (ohm^-1 cm^-1) = ");
+disp(V,"Voltage across the bar (V) = ");
+\ No newline at end of file
diff --git a/135/CH1/EX1.4/EX4.sce b/135/CH1/EX1.4/EX4.sce
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+// Example 1.4: Contact difference of potential
+clc, clear
+N=5e22; // Number of acceptor or donor atoms per metres cube of step graded p-n junction
+ni=1.45e16; // Intrinsic carrier concentration in inverse metres cube
+VT=25e-3; // Voltage equivalent to temperatue at room temperature in volts
+Vo=VT*log(N^2/ni^2); // Contact difference of potential in volts
+Vo=Vo*1e3; // Contact difference of potential in milivolts
+disp(Vo,"Contact difference of potential (mV) = ");
+\ No newline at end of file
diff --git a/135/CH1/EX1.7/EX7.sce b/135/CH1/EX1.7/EX7.sce
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+// Example 1.7: Potential barrier
+clc, clear
+rho_p=0.05; // Resistivity of p side of step-graded junction in ohm metres
+rho_n=0.025; // Resistivity of n side of step-graded junction in ohm metres
+mu_p=475e-4; // Mobility of holes in metres square per volt second
+mu_n=1500e-4; // Mobility of holes in metres square per volt second
+ni=1.45e16; // Intrinsic carrier concentration in atoms per metres cube
+q=1.6e-19; // Charge on an electron in coulombs
+VT=25e-3; // Voltage equivalent to temperatue at room temperature in volts
+NA=1/(q*mu_p*rho_p); // Acceptor concentration in atoms per metres cube
+ND=1/(q*mu_n*rho_n); // Donor concentration in atoms per metres cube
+Vo=VT*log(NA*ND/ni^2); // Contact difference of potential in volts
+Vo=Vo*1e3; // Contact difference of potential in milivolts
+disp(Vo,"Contact difference of potential (mV) = ");
+\ No newline at end of file