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author | priyanka | 2015-06-24 15:03:17 +0530 |
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committer | priyanka | 2015-06-24 15:03:17 +0530 |
commit | b1f5c3f8d6671b4331cef1dcebdf63b7a43a3a2b (patch) | |
tree | ab291cffc65280e58ac82470ba63fbcca7805165 /767/CH7/EX7.7.1 | |
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initial commit / add all books
Diffstat (limited to '767/CH7/EX7.7.1')
-rwxr-xr-x | 767/CH7/EX7.7.1/Ch07Exa7_7_1.sci | 86 |
1 files changed, 86 insertions, 0 deletions
diff --git a/767/CH7/EX7.7.1/Ch07Exa7_7_1.sci b/767/CH7/EX7.7.1/Ch07Exa7_7_1.sci new file mode 100755 index 000000000..559082e5d --- /dev/null +++ b/767/CH7/EX7.7.1/Ch07Exa7_7_1.sci @@ -0,0 +1,86 @@ +// Scilab code Exa7.7.1 : To calculate the thickness of depletion layer of silicon detector and amplitude of voltage pulse :P.no. 316 (2011)
+E_r = 12; // Relative permittivity
+E_o = 8.85e-012; // Permittivity of free space
+E = E_r*E_o; // Absolute dielectric constant
+C = 100e-012; // Capacitance of the dielectric, F
+A = 1.6e-04; // Area of the detector, m^2
+e = 1.602e-019; // Charge of an electrin, C
+E_p = 3.2; // Energy required to create an ion pair, eV
+E_s = 12e+06; // Energy required to stopped ion pair, eV
+n = E_s/E_p; // Number of ion-pair produced
+Q = n*e; // Charge of these ion pair, C
+d = A*E/(C*10^-6); // The thickness of the depletion layer, micron
+A = Q/C*1000; // The amplitude of voltage pulse, mV
+printf("\n The thickness of the depletion layer = %d micron \n The amplitude of voltage pulse: = %6.4f mV ", d, A)
+// Result
+// The thickness of the depletion layer = 169 micron
+// The amplitude of voltage pulse: = 6.0075 mV
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