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author | priyanka | 2015-06-24 15:03:17 +0530 |
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committer | priyanka | 2015-06-24 15:03:17 +0530 |
commit | b1f5c3f8d6671b4331cef1dcebdf63b7a43a3a2b (patch) | |
tree | ab291cffc65280e58ac82470ba63fbcca7805165 /68/CH4/EX4.6/ex6.sce | |
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initial commit / add all books
Diffstat (limited to '68/CH4/EX4.6/ex6.sce')
-rwxr-xr-x | 68/CH4/EX4.6/ex6.sce | 13 |
1 files changed, 13 insertions, 0 deletions
diff --git a/68/CH4/EX4.6/ex6.sce b/68/CH4/EX4.6/ex6.sce new file mode 100755 index 000000000..cd91485de --- /dev/null +++ b/68/CH4/EX4.6/ex6.sce @@ -0,0 +1,13 @@ +// Example 4.6; Design of given circuit to obtain I_D=0.5mA and V_D=3V
+// MOSFET is in saturation
+V_DD=5; // (V)
+V_D=3; // (V)
+I_D=0.5*10^-3; // (A)
+V_t=-1; // (V)
+K=1*10^-3; // K=k'_n(W/L)
+V_OV=sqrt(2*I_D/K);
+V_GS=V_t+(-V_OV)
+R_D=V_D/I_D;
+V_Dmax=V_D-V_t; // - sign as magnitude of V_t is considered
+R_D=V_Dmax/I_D;
+disp(R_D,"R_D (ohm)")
\ No newline at end of file |