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author | prashantsinalkar | 2018-02-03 11:01:52 +0530 |
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committer | prashantsinalkar | 2018-02-03 11:01:52 +0530 |
commit | 7bc77cb1ed33745c720952c92b3b2747c5cbf2df (patch) | |
tree | 449d555969bfd7befe906877abab098c6e63a0e8 /3840/CH8 | |
parent | d1e070fe2d77c8e7f6ba4b0c57b1b42e26349059 (diff) | |
download | Scilab-TBC-Uploads-master.tar.gz Scilab-TBC-Uploads-master.tar.bz2 Scilab-TBC-Uploads-master.zip |
Diffstat (limited to '3840/CH8')
-rw-r--r-- | 3840/CH8/EX8.10/Ex8_10.sce | 22 | ||||
-rw-r--r-- | 3840/CH8/EX8.13/Ex8_13.sce | 14 | ||||
-rw-r--r-- | 3840/CH8/EX8.15/Ex8_15.sce | 15 | ||||
-rw-r--r-- | 3840/CH8/EX8.16/Ex8_16.sce | 18 | ||||
-rw-r--r-- | 3840/CH8/EX8.17/Ex8_17.sce | 18 | ||||
-rw-r--r-- | 3840/CH8/EX8.18/Ex8_18.sce | 17 | ||||
-rw-r--r-- | 3840/CH8/EX8.2/Ex8_2.sce | 15 | ||||
-rw-r--r-- | 3840/CH8/EX8.3/Ex8_3.sce | 15 | ||||
-rw-r--r-- | 3840/CH8/EX8.4/Ex8_4.sce | 17 | ||||
-rw-r--r-- | 3840/CH8/EX8.5/Ex8_5.sce | 16 | ||||
-rw-r--r-- | 3840/CH8/EX8.6/Ex8_6.sce | 16 | ||||
-rw-r--r-- | 3840/CH8/EX8.7/Ex8_7.sce | 20 | ||||
-rw-r--r-- | 3840/CH8/EX8.8/Ex8_8.sce | 17 | ||||
-rw-r--r-- | 3840/CH8/EX8.9/Ex8_9.sce | 15 |
14 files changed, 235 insertions, 0 deletions
diff --git a/3840/CH8/EX8.10/Ex8_10.sce b/3840/CH8/EX8.10/Ex8_10.sce new file mode 100644 index 000000000..9a2fdd508 --- /dev/null +++ b/3840/CH8/EX8.10/Ex8_10.sce @@ -0,0 +1,22 @@ +clear +// +// +// + +//Variable declaration +e=1.6*10**-19 //charge(c) +ni=1.5*10**16 //particle density(per m**3) +mew_e=0.14 //electron mobility(m**2/Vs) +mew_h=0.05 //hole mobility(m**2/Vs) +D=2.33*10**3 //density(kg/m**3) +A=28.09 //atomic weight(kg) +NA=6.025*10**26 //avagadro number + +//Calculation +N=NA*D/A //number of atoms +n=N/10**8 //electron concentration(per m**3) +p=ni**2/n //hole concentration(per m**3) +sigma=e*((n*mew_e)+(p*mew_h)) //conductivity(per ohm m) + +//Result +printf("\n conductivity is %0.1f per ohm m",sigma) diff --git a/3840/CH8/EX8.13/Ex8_13.sce b/3840/CH8/EX8.13/Ex8_13.sce new file mode 100644 index 000000000..2135328c0 --- /dev/null +++ b/3840/CH8/EX8.13/Ex8_13.sce @@ -0,0 +1,14 @@ +clear +// +// +// + +//Variable declaration +rho=0.2 //resistivity(ohm m) +e=1.602*10**-19 //charge(c) +mewn=0.35 //mobility of charge carriers(m**2/Vs) + +//Calculation +n=1/(rho*mewn*e) //density of donor atoms(electrons/m**3) + +//Result diff --git a/3840/CH8/EX8.15/Ex8_15.sce b/3840/CH8/EX8.15/Ex8_15.sce new file mode 100644 index 000000000..ba03a69f8 --- /dev/null +++ b/3840/CH8/EX8.15/Ex8_15.sce @@ -0,0 +1,15 @@ +clear +// +// +// + +//Variable declaration +e=1.6*10**-19 //charge(c) +mew_e=0.19 //electron mobility(m**2/Vs) +T=300 //temperature(K) +KB=1.38*10**-23 //boltzmann constant + +//Calculation +Dn=mew_e*KB*T/e //diffusion coefficient(m**2/sec) + +//Result diff --git a/3840/CH8/EX8.16/Ex8_16.sce b/3840/CH8/EX8.16/Ex8_16.sce new file mode 100644 index 000000000..50952b5eb --- /dev/null +++ b/3840/CH8/EX8.16/Ex8_16.sce @@ -0,0 +1,18 @@ +clear +// +// +// + +//Variable declaration +KB=1.38*10**-23 //boltzmann constant +e=1.602*10**-19 //charge(c) +rho1=4.5 +rho2=2.0 +T1=293 //temperature(K) +T2=305 //temperature(K) + +//Calculation +Eg=2*KB*log(rho1/rho2)/((1/T1)-(1/T2)) //energy gap(J) +Eg=Eg/e //energy gap(eV) + +//Result diff --git a/3840/CH8/EX8.17/Ex8_17.sce b/3840/CH8/EX8.17/Ex8_17.sce new file mode 100644 index 000000000..e978a115b --- /dev/null +++ b/3840/CH8/EX8.17/Ex8_17.sce @@ -0,0 +1,18 @@ +clear +// +// +// + +//Variable declaration +Vm=20 //voltage(V) +RL=500 //load resistance(ohm) +rf=10 //forward resistance(ohm) +VB=0.7 //bias voltage(V) + +//Calculation +Im=(Vm-VB)*10**3/(rf+RL) //peak current(mA) +Vo=Im*RL/10**3 //peak output voltage(V) + +//Result +printf("\n peak current is %0.1f mA",Im) +printf("\n peak output voltage is %0.1f V",Vo) diff --git a/3840/CH8/EX8.18/Ex8_18.sce b/3840/CH8/EX8.18/Ex8_18.sce new file mode 100644 index 000000000..71888bbc8 --- /dev/null +++ b/3840/CH8/EX8.18/Ex8_18.sce @@ -0,0 +1,17 @@ +clear +// +// +// + +//Variable declaration +Vrms=200 //voltage(V) +RL=1000 //load resistance(ohm) + +//Calculation +Im=Vrms*sqrt(2)/RL //peak current(A) +Idc=2*Im/%pi //average DC current(A) +Vdc=int(Idc*RL) //dc voltage(V) +x=(Vrms/Vdc)**2 +gama=sqrt(x-1)*Vdc //ripple factor(V) + +//Result diff --git a/3840/CH8/EX8.2/Ex8_2.sce b/3840/CH8/EX8.2/Ex8_2.sce new file mode 100644 index 000000000..f6558111f --- /dev/null +++ b/3840/CH8/EX8.2/Ex8_2.sce @@ -0,0 +1,15 @@ +clear +// +// +// + +//Variable declaration +e=1.6*10**-19 //charge(c) +mew_n=0.3 //electron mobility(m**2/Vs) +rho=0.25 //resistivity(ohm m) + +//Calculation +n=1/(rho*e*mew_n) //number of donor atoms per m**3 + +//Result +printf("\n number of donor atoms is %0.3f *10**19 per m**3",n/10**19) diff --git a/3840/CH8/EX8.3/Ex8_3.sce b/3840/CH8/EX8.3/Ex8_3.sce new file mode 100644 index 000000000..33ad4d165 --- /dev/null +++ b/3840/CH8/EX8.3/Ex8_3.sce @@ -0,0 +1,15 @@ +clear +// +// +// + +//Variable declaration +e=1.6*10**-19 //charge(c) +mewn=0.21 //electron mobility(m**2/Vs) +T=300 //temperature(K) +KB=1.38*10**-23 //boltzmann constant + +//Calculation +Dn=mewn*KB*T/e //diffusion coefficient(m**2/sec) + +//Result diff --git a/3840/CH8/EX8.4/Ex8_4.sce b/3840/CH8/EX8.4/Ex8_4.sce new file mode 100644 index 000000000..a59bf0d07 --- /dev/null +++ b/3840/CH8/EX8.4/Ex8_4.sce @@ -0,0 +1,17 @@ +clear +// +// +// + +//Variable declaration +e=1.6*10**-19 //charge(c) +RH=3.22*10**-4 //hall coefficient(m**3C-1) +rho=8.5*10**-3 //resistivity(ohm m) + +//Calculation +p=1/(RH*e) //hole concentration(m-3) +mewp=RH/rho //hole mobility(m**2/Vs) + +//Result +printf("\n hole concentration is %0.1f *10**21 m-3",p/10**21) +printf("\n hole mobility is %0.5f m**2/Vs",mewp) diff --git a/3840/CH8/EX8.5/Ex8_5.sce b/3840/CH8/EX8.5/Ex8_5.sce new file mode 100644 index 000000000..1805b5180 --- /dev/null +++ b/3840/CH8/EX8.5/Ex8_5.sce @@ -0,0 +1,16 @@ +clear +// +// +// + +//Variable declaration +e=1.6*10**-19 //charge(c) +mew_e=0.36 //electron mobility(m**2/Vs) +mew_h=0.17 //hole mobility(m**2/Vs) +rhoi=2.12 //resistivity(ohm m) + +//Calculation +ni=1/(rhoi*e*(mew_e+mew_h)) //intrinsic concentration(per m**3) + +//Result +printf("\n intrinsic concentration is %0.2f *10**16 per m**3",ni/10**16) diff --git a/3840/CH8/EX8.6/Ex8_6.sce b/3840/CH8/EX8.6/Ex8_6.sce new file mode 100644 index 000000000..cc29be2d1 --- /dev/null +++ b/3840/CH8/EX8.6/Ex8_6.sce @@ -0,0 +1,16 @@ +clear +// +// +// + +//Variable declaration +e=1.6*10**-19 //charge(c) +mew_e=0.39 //electron mobility(m**2/Vs) +mew_h=0.19 //hole mobility(m**2/Vs) +ni=2.4*10**19 //intrinsic concentration(per m**3) + +//Calculation +rhoi=1/(ni*e*(mew_e+mew_h)) //resistivity(ohm m) + +//Result +printf("\n resistivity is %0.3f ohm m",rhoi) diff --git a/3840/CH8/EX8.7/Ex8_7.sce b/3840/CH8/EX8.7/Ex8_7.sce new file mode 100644 index 000000000..04363e9c2 --- /dev/null +++ b/3840/CH8/EX8.7/Ex8_7.sce @@ -0,0 +1,20 @@ +clear +// +// +// + +//Variable declaration +ni=1.5*10**16 //charge carriers(per m**3) +e=1.6*10**-19 //charge(c) +mew_e=0.135 //electron mobility(m**2/Vs) +mew_h=0.048 //hole mobility(m**2/Vs) +N=10**23 //number of atoms(per m**3) + +//Calculation +sigma=ni*e*(mew_e+mew_h) +p=ni**2/N //hole concentration(per m**3) +sigman=N*e*mew_e //conductivity(per ohm m) + +//Result +printf("\n hole concentration is %0.3f *10**9 per m**3",p/10**9) +printf("\n conductivity is %0.3f *10**3 per ohm m",sigman/10**3) diff --git a/3840/CH8/EX8.8/Ex8_8.sce b/3840/CH8/EX8.8/Ex8_8.sce new file mode 100644 index 000000000..e5da0acc6 --- /dev/null +++ b/3840/CH8/EX8.8/Ex8_8.sce @@ -0,0 +1,17 @@ +clear +// +// +// + +//Variable declaration +e=1.6*10**-19 //charge(c) +RH=3.66*10**-4 //hall coefficient(m**3C-1) +rho=8.93*10**-3 //resistivity(ohm m) + +//Calculation +p=1/(RH*e) //hole concentration(m-3) +mew=RH/rho //hole mobility(m**2/Vs) + +//Result +printf("\n hole concentration is %0.1f *10**22 m-3",p/10**22) +printf("\n hole mobility is %0.3f *10**-2 m**2/Vs",mew*10**2) diff --git a/3840/CH8/EX8.9/Ex8_9.sce b/3840/CH8/EX8.9/Ex8_9.sce new file mode 100644 index 000000000..a1156c52e --- /dev/null +++ b/3840/CH8/EX8.9/Ex8_9.sce @@ -0,0 +1,15 @@ +clear +// +// +// + +//Variable declaration +e=1.6*10**-19 //charge(c) +ni=1.5*10**16 //particle density(per m**3) +mew_e=0.13 //electron mobility(m**2/Vs) +mew_h=0.05 //hole mobility(m**2/Vs) + +//Calculation +sigma=ni*e*(mew_e+mew_h) //conductivity(per ohm m) + +//Result |