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+// Example 4.9
+// Computation for the magnitude and polarity of the Hall voltage between the terminal 1 & 2,the value of Hall coefficient for case(A) and case(B),Hall coefficient and mobility of the majority carrier of the semiconductor for case(D)//
+// Page no.108
+
+clc;
+clear;
+close;
+
+//Given data ;
+e=1.60*10^-19;
+nn=2.5*10^15;
+B=6*10^-5;
+I=10*10^-3;
+w=5*10^-1
+p1=4.0*10^-4;
+Pp=2.5*10^15;
+VH3=6*10^-3;
+w3=0.5;
+d=0.4;
+Vd=5;
+l=1.2;
+
+
+//...................................(A)....................................//
+
+//Calculation for charge density p//
+p=-e*nn;
+
+//negative sign denotes the tyoe of majority carrier in the conduction of current in the semiconductor is eletron//
+
+//Calculation for magnitude of the Hall voltage//
+VH=(B*I)/(p1*w);
+
+//the polarity of Hall voltage at terminal1 is negative with respect to the terminal2//
+
+//Calculation for Hall coefficient//
+RH=1/p;
+
+//...................................(B)....................................//
+
+//Calculation for the charge density//
+p2=e*Pp;
+
+//Calculation for magnitude of the Hall voltage//
+VH2=(B*I)/(p2*w);
+
+//Calculation for Hall coefficient//
+RH2=1/p2;
+
+//The holes are deflected in the -Y direction as electron and hence the terminal1 will be positive with respect to the termninal2//
+
+//...................................(D)....................................//
+
+//Calculation for Hall coefficient//
+RH3=(VH3*w3)/(I*B);
+
+//Calculation for concentration of holes in semiconductor//
+Pp3=1/(e*RH3);
+
+//Calculation for mobility of the holes//
+mu_p=(l/d)*(VH3/(B*Vd));
+
+
+//Displaying the result in command window
+printf("........................Part (A)..........................");
+printf('\n \n Charge density = %0.1f x 10^-4 C/cm3',p*10^4);
+printf('\n \n Magnitude of the Hall voltage = %0.1f x 10^-3 V',VH*10^3);
+printf('\n \n Hall coefficient = %0.1f x 10^3 cm3/C',RH*10^-3);
+printf("\n \n ........................Part (B)..........................");
+printf('\n \n Charge density = %0.1f x 10^-4 C/cm3',p2*10^4);
+printf('\n \n Magnitude of the Hall voltage = %0.0f mV',VH2*10^3);
+printf('\n \n Hall coefficient = %0.1f x 10^3 cm3/C',RH2*10^-3);
+printf("\n \n ........................Part (D)..........................");
+printf('\n \n Hall coefficient = %0.0f x 10^3 cm3/C',RH3*10^-3);
+printf('\n \n Concentration of holes in semiconductor = %0.2f x 10^15 cm^-3',Pp3*10^-15);
+printf('\n \n Mobility of the holes = %0.0f cm2/V sec',mu_p);
+
+
+//Answers are varying due to round off error//