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| author | priyanka | 2015-06-24 15:03:17 +0530 |
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| committer | priyanka | 2015-06-24 15:03:17 +0530 |
| commit | b1f5c3f8d6671b4331cef1dcebdf63b7a43a3a2b (patch) | |
| tree | ab291cffc65280e58ac82470ba63fbcca7805165 /3492/CH5/EX5.9 | |
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Diffstat (limited to '3492/CH5/EX5.9')
| -rw-r--r-- | 3492/CH5/EX5.9/Ex5_9.sce | 19 |
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diff --git a/3492/CH5/EX5.9/Ex5_9.sce b/3492/CH5/EX5.9/Ex5_9.sce new file mode 100644 index 000000000..952fd7528 --- /dev/null +++ b/3492/CH5/EX5.9/Ex5_9.sce @@ -0,0 +1,19 @@ +clc
+//Chapter5
+//Ex_9
+//Given
+e=1.6*10^-19 // in coulombs
+Nd=10^17 //in cm^-3
+Na=9*10^16 //in cm^-3
+//part(a)
+ue1=800 // at 300 kelvin ue in cm2/V/s
+sigma1=e*Nd*ue1
+ue2=420 // at 400 kelvin ue in cm2/V/s
+sigma2=e*Nd*ue2
+disp(sigma2,sigma1,"when Si sample is doped with 10^17 arsenic atoms/cm3, the conductivity of the sample at 300K and 400K in ohm^-1*cm^-1 is")
+//part(b)
+ue1=600 // at 300 kelvin ue in cm2/V/s
+sigma1=e*(Nd-Na)*ue1
+ue2=400 // at 400 kelvin ue in cm2/V/s
+sigma2=e*(Nd-Na)*ue2
+disp(sigma2,sigma1,"when n-type Si is further doped with 9*10^16 boron atoms /cm3, the conductivity of the sample at 300K and 400K in ohm^-1*cm^-1 is")
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