initial commit / add all books

11 files changed, 205 insertions, 0 deletions

diff --git a/3492/CH5/EX5.1/Ex5_1.sce b/3492/CH5/EX5.1/Ex5_1.sce
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+clc

+//Chapter5

+//Ex_1

+//Given

+e=1.6*10^-19 // in coulombs

+h=6.6*10^-34 //in J s

+m=9.1*10^-31 //in Kg

+me=1.08*m

+mh=0.56*m

+T=300 //in Kelvin

+Eg=1.10 // in eV

+ue=1350//in cm2/V/s

+uh=450//in cm2/V/s

+k=1.38*10^-23 //m2 kg s-2 K-1

+Nc=2*((2*%pi*me*k*T)/h^2)^(3/2) //in m^-3

+Nc=Nc*10^-6 //in cm^-3

+Nv=2*((2*%pi*mh*k*T)/h^2)^(3/2) //in m^-3

+Nv=Nv*10^-6 //in cm^-3

+ni=sqrt(Nc*Nv)*exp(-Eg*e/(2*k*T))

+disp(ni,"Intrinsic concentration of Si in cm^-3 is")

+sigma=e*ni*(ue+uh)

+p=1/sigma

+disp(p,"Intrinsic resistivity of Si in ohm cm is")

diff --git a/3492/CH5/EX5.11/Ex5_11.sce b/3492/CH5/EX5.11/Ex5_11.sce
new file mode 100644
index 000000000..98d48bd93
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+++ b/3492/CH5/EX5.11/Ex5_11.sce
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+clc

+//Chapter5

+//Ex_11

+//Given

+//part(a)

+h=6.63*10^-34 //in Js

+c=3*10^8 // in m/s

+e=1.6*10^-19 // in coulombs

+ue=0.034 //in m2/V/s

+uh=0.0018 //in m2/V/s

+t=1*10^-3 // in seconds

+L=1*10^-3 //in m

+D=0.1*10^-3 //in m

+W=1*10^-3 //in m

+I=1// mW/cm^2

+I=I*10^-3*10^4 // conversion of units to W/m^2

+n=1 //quantum efficiency

+lambda=450*10^-9 // in m

+V=50 // in volts

+//part(a)

+A=L*W //in m3

+EHP_ph=(A*n*I*lambda)/(h*c)

+disp(EHP_ph,"No.of EHP/s generated per second is")

+//part(b)

+delta_sigma=e*n*I*lambda*t*(ue+uh)/(h*c*D)

+disp(delta_sigma,"Photo conductivity of the sample in ohm^-1 m^-1 is")

+//part(c)

+A=0.1*10^-6 //m2

+E=V/W

+delta_J=E*delta_sigma

+delta_I=A*delta_J

+disp(delta_I*10^3,"Photocurrent produced in mA is")

diff --git a/3492/CH5/EX5.13/Ex5_13.sce b/3492/CH5/EX5.13/Ex5_13.sce
new file mode 100644
index 000000000..c820fa507
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+++ b/3492/CH5/EX5.13/Ex5_13.sce
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+clc

+//Chapter5

+//Ex_13

+//Given

+e=1.6*10^-19 // in coulombs

+T=300//in kelvin

+ue=1300 //in cm2/V/s

+//V=k*T/e

+V=0.0259 //thermal voltage in Volts

+//D=ue*k*T/e

+D=ue*V

+disp(D,"Diffusion coefficient of electrons at room temperature in cm2/s is")

diff --git a/3492/CH5/EX5.17/Ex5_17.sce b/3492/CH5/EX5.17/Ex5_17.sce
new file mode 100644
index 000000000..9ef900965
--- /dev/null
+++ b/3492/CH5/EX5.17/Ex5_17.sce
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+clc

+//Chapter5

+//Ex_17

+//Given

+Eg=1.42 //in eV

+//letE=hc/lambda=hf

+E=1.96 //in eV

+P_L=50 //in mW

+kT=0.0259 //  in eV

+delta_E=E-(Eg+(3/2)*kT)

+P_H=(P_L/(E))*delta_E

+disp(P_H,"Amount of power dissipated as heat in mW is")

diff --git a/3492/CH5/EX5.18/Ex5_18.sce b/3492/CH5/EX5.18/Ex5_18.sce
new file mode 100644
index 000000000..da69b5af2
--- /dev/null
+++ b/3492/CH5/EX5.18/Ex5_18.sce
@@ -0,0 +1,23 @@
+clc

+//Chapter5

+//Ex_18

+//Given

+phi_m=4.28 //in eV

+e=1.6*10^-19 // in coulombs

+X=4.01 //in eV

+kT=0.026 // in eV

+Vf=0.1// in V

+T=300//in kelvin

+Be=30 //A/K2/cm2

+A=0.01 //cm2

+//part(a)

+phi_B=phi_m-X

+disp(phi_B,"Theoretical barrier height in eV")

+//part(b)

+phi_B=0.5 //in eV

+Io=A*Be*T^2*exp(-phi_B/kT)

+disp(Io*10^6,"Saturation current in micro amperes is")

+//let/E=e*Vf //in eV

+E=0.1 //in eV

+If=Io*(exp((E/kT))-1)

+disp(If*10^3,"Forward current in milli amperes is")

diff --git a/3492/CH5/EX5.2/Ex5_2.sce b/3492/CH5/EX5.2/Ex5_2.sce
new file mode 100644
index 000000000..39b28be48
--- /dev/null
+++ b/3492/CH5/EX5.2/Ex5_2.sce
@@ -0,0 +1,10 @@
+clc

+//Chapter5

+//Ex_2

+//Given

+T=300//in kelvin

+k=1.38*10^-23 // in m2 kg s-2 K-1

+me=9.1*10^-31 // in Kg

+m=0.26*me

+Ve=sqrt(3*k*T/m)

+disp(Ve,"Mean speed of electrons in conduction band in m/s is")

diff --git a/3492/CH5/EX5.3/Ex5_3.sce b/3492/CH5/EX5.3/Ex5_3.sce
new file mode 100644
index 000000000..129a3a47c
--- /dev/null
+++ b/3492/CH5/EX5.3/Ex5_3.sce
@@ -0,0 +1,21 @@
+clc

+//Chapter5

+//Ex_3

+//Given

+e=1.6*10^-19 // in coulombs

+ue=1350//in cm2/V/s

+uh=450//in cm2/V/s

+ni=1.45*10^10 //in cm^-3

+L=1 //in cm

+A=1 //in cm2

+N_Si=5*10^22 //in cm^-3

+sigma=e*ni*(ue+uh)

+R=L/(sigma*A)

+disp(R,"Resistance of a pure Silicon crystal in ohms is")

+Nd=N_Si/10^9

+n=Nd //at room temperature

+p=ni^2/Nd

+sigma=e*n*ue

+R=L/(sigma*A)

+disp(R,"Resistance in ohms of Silicon crystal when dopped with Arsenic with 1 in 10^9 is")

+

diff --git a/3492/CH5/EX5.4/Ex5_4.sce b/3492/CH5/EX5.4/Ex5_4.sce
new file mode 100644
index 000000000..db0a62857
--- /dev/null
+++ b/3492/CH5/EX5.4/Ex5_4.sce
@@ -0,0 +1,10 @@
+clc

+//Chapter5

+//Ex_4

+//Given

+Na=10^17 //acceptor atoms /cm3

+Nd=10^16 //donor atoms /cm3

+p=Na-Nd // in cm^-3

+ni=1.45*10^10 //in cm^-3

+n=ni^2/p

+disp(n,"Electron concentration in cm^-3")

diff --git a/3492/CH5/EX5.5/Ex5_5.sce b/3492/CH5/EX5.5/Ex5_5.sce
new file mode 100644
index 000000000..323882548
--- /dev/null
+++ b/3492/CH5/EX5.5/Ex5_5.sce
@@ -0,0 +1,24 @@
+clc

+//Chapter5

+//Ex_5

+//Given

+Na=2*10^17 //acceptor atoms /cm3

+Nd=10^16 //acceptor atoms /cm3

+ni=1.45*10^10 //in cm^-3

+K=0.0259 //  in eV

+//since Nd>>ni

+n=Nd

+//let EFn-EFi=E

+E=K*log(Nd/ni)

+disp(E,"Position of the fermi energy w.r.t fermi energy in intrinsic Si in eV is")

+//for intrinsic Si

+//ni=Nc*exp(-(Ec-E_Fi)/(k*T))

+//for doped Si

+//Nd=Nc*exp(-(Ec-E_Fn)/(k*T))

+//let x=Nd/ni

+//let K=k*T

+p=Na-Nd

+//let E=EFp-EFi

+//let n=p/ni

+E=-K*log(p/ni)

+disp(E,"Position of the fermi energy w.r.t fermi energy in n-type case in eV is")

diff --git a/3492/CH5/EX5.7/Ex5_7.sce b/3492/CH5/EX5.7/Ex5_7.sce
new file mode 100644
index 000000000..549cdc666
--- /dev/null
+++ b/3492/CH5/EX5.7/Ex5_7.sce
@@ -0,0 +1,19 @@
+clc

+//Chapter5

+//Ex_7

+//Given

+Nd=10^15 //in cm^-3

+Nc=2.8*10^19 //in cm^-3

+Ti=556 // in Kelvin

+k=8.62*10^-5 //in eV/K

+delta_E=0.045 //in eV

+T=300 //in kelvin

+//part(a)

+disp("From fig 5.16 the estimated temperature above which the si sample behaves as if intrinsic is 556 Kelvin")

+//part(b)

+Ts=delta_E/(k*log(Nc/(2*Nd)))

+Nc_Ts=Nc*(Ts/T)^(3/2)

+disp(Ts,"Lowest temperature in kelvin is")

+//the improved temperature 

+Ts=delta_E/(k*log(Nc_Ts/(2*Nd)))

+printf("Extrinsic range of Si is %f K to 556 K",Ts)

diff --git a/3492/CH5/EX5.9/Ex5_9.sce b/3492/CH5/EX5.9/Ex5_9.sce
new file mode 100644
index 000000000..952fd7528
--- /dev/null
+++ b/3492/CH5/EX5.9/Ex5_9.sce
@@ -0,0 +1,19 @@
+clc

+//Chapter5

+//Ex_9

+//Given

+e=1.6*10^-19 // in coulombs

+Nd=10^17 //in cm^-3

+Na=9*10^16 //in cm^-3

+//part(a)

+ue1=800 // at 300 kelvin ue in cm2/V/s

+sigma1=e*Nd*ue1

+ue2=420 // at 400 kelvin ue in cm2/V/s

+sigma2=e*Nd*ue2

+disp(sigma2,sigma1,"when Si sample is doped with 10^17 arsenic atoms/cm3, the conductivity of the sample at 300K and 400K in ohm^-1*cm^-1 is")

+//part(b)

+ue1=600 // at 300 kelvin ue in cm2/V/s

+sigma1=e*(Nd-Na)*ue1

+ue2=400 // at 400 kelvin ue in cm2/V/s

+sigma2=e*(Nd-Na)*ue2

+disp(sigma2,sigma1,"when n-type Si is further doped with 9*10^16 boron atoms /cm3, the conductivity of the sample at 300K and 400K in ohm^-1*cm^-1 is")