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| author | priyanka | 2015-06-24 15:03:17 +0530 |
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| committer | priyanka | 2015-06-24 15:03:17 +0530 |
| commit | b1f5c3f8d6671b4331cef1dcebdf63b7a43a3a2b (patch) | |
| tree | ab291cffc65280e58ac82470ba63fbcca7805165 /3492/CH1/EX1.10 | |
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Diffstat (limited to '3492/CH1/EX1.10')
| -rw-r--r-- | 3492/CH1/EX1.10/Ex1_10.sce | 20 |
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diff --git a/3492/CH1/EX1.10/Ex1_10.sce b/3492/CH1/EX1.10/Ex1_10.sce new file mode 100644 index 000000000..55b46cae6 --- /dev/null +++ b/3492/CH1/EX1.10/Ex1_10.sce @@ -0,0 +1,20 @@ +clc
+//Chapter1
+//Ex_1.10
+//Given
+NA=6.023*10^23 //mol^-1
+d=2.33 //density of Si in g/cm3
+Mat=28.09//g/mol
+Ev=2.4 //ev/atom
+Ev=2.4*1.6*10^-19 //J/atom
+k=1.38*10^-23 //J/K
+T=300 //kelvin
+T1=1000//degree celcius
+T1=T1+273 //in kelvin
+N= (NA*d)/Mat
+//at room temperature
+nv=N*exp(-(Ev/(k*T)))
+disp(nv,"concentration of vacancies in a Si crystal at room temperature in cm^-3 is")
+//at 1000 degree celcius
+nv=N*exp(-(Ev/(k*T1)))
+disp(nv,"concentration of vacancies in a Si crystal at 1000 degree celcius in cm^-3 is")
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