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authorpriyanka2015-06-24 15:03:17 +0530
committerpriyanka2015-06-24 15:03:17 +0530
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+clc;
+clear all;
+ue=0.4;//electon mobility in m^2/V*s
+uh=0.2;//hole mobility in m^2/V*s
+ni=2.1e19;//intrisic carrier concentration in m^-3
+e=1.6e-19;//charge of electron
+p=4.5e23;//density of hole
+sigma=ni*e*(ue+uh);//conductivity of boron
+disp('ohm^-1 m^-1',sigma,'conductivity of semiconductor is:')
+sigma1=p*e*uh;
+disp('ohm^-1 m^-1',sigma1,'conductivity of boron dopped semiconductor is:')
+