initial commit / add all books

9 files changed, 73 insertions, 0 deletions

diff --git a/296/CH3/EX3.1/eg3_1.sce b/296/CH3/EX3.1/eg3_1.sce
new file mode 100755
index 000000000..baa0da668
--- /dev/null
+++ b/296/CH3/EX3.1/eg3_1.sce
@@ -0,0 +1,4 @@
+//j=complex(0,1);

+//psi = U*exp(j*k*x);

+disp("px = h_cross*k(x)");

+disp("With infinite limits of integration, both the numerator and denominator are infinite. For problems of this type, one integrates between the finite limits -LI2 and +L/2 and, in the final result, then assumes that L approaches infinity. This result implies that (E, k) diagrams can be considered plots of electron energy vs. momentum, with a scaling factor h_cross.")
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diff --git a/296/CH3/EX3.2/eg3_2.png b/296/CH3/EX3.2/eg3_2.png
new file mode 100755
index 000000000..99af937bc
--- /dev/null
+++ b/296/CH3/EX3.2/eg3_2.png
diff --git a/296/CH3/EX3.2/eg3_2.sce b/296/CH3/EX3.2/eg3_2.sce
new file mode 100755
index 000000000..3c94cbc98
--- /dev/null
+++ b/296/CH3/EX3.2/eg3_2.sce
@@ -0,0 +1,7 @@
+//p = m*v

+//p = h*k; //electron momentum, where h is constant

+//E = 0.5*p*p/m

+//E = 0.5*h*k*k/m; //electron energy

+k = -10:0.01:10; //limits on wave vector k

+E = k^2; // E is proportional to square of wave vector

+plot(k,E)
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diff --git a/296/CH3/EX3.3/eg3_3.sce b/296/CH3/EX3.3/eg3_3.sce
new file mode 100755
index 000000000..e1fcdf665
--- /dev/null
+++ b/296/CH3/EX3.3/eg3_3.sce
@@ -0,0 +1,10 @@
+n = 1;

+epsilonr = 11.8; //relative dielectric constant for silicon

+epsilon = 8.85*10^-12; //dielectric constant

+m = 9.11*10^-31; //mass of electron

+mn = 0.26*m; //for silicon

+h = 6.63*10^-34;

+q = 1.6*10^-19; //electronic charge

+r = 10^10*(epsilonr*epsilon*h*h)/(mn*q*q*%pi); //radius in armstrong

+disp(r,"radius of electron orbit around donor (in armstrong) =")

+disp("This is more than 4 lattice spacings a = 5.43 armstrong.")
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diff --git a/296/CH3/EX3.4/eg3_4.sce b/296/CH3/EX3.4/eg3_4.sce
new file mode 100755
index 000000000..1a85a4c45
--- /dev/null
+++ b/296/CH3/EX3.4/eg3_4.sce
@@ -0,0 +1,7 @@
+m = 9.11*10^-31; //mass of electron

+ml = 0.98*m; 

+ms = 0.19*m;

+mn = 6^(2/3)*(ml*ms*ms)^(1/3); //density of states effective mass calculation

+mn0 = mn/m;

+disp(mn,"density of states effective mass (in kilogram)=")

+disp(mn0,"density of states effective mass in proportion to mass of electron= ")
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diff --git a/296/CH3/EX3.5/eg3_5.sce b/296/CH3/EX3.5/eg3_5.sce
new file mode 100755
index 000000000..0f38190c2
--- /dev/null
+++ b/296/CH3/EX3.5/eg3_5.sce
@@ -0,0 +1,8 @@
+n0 = 10^17; //concentration of electrons

+ni = 1.5*10^10; //intrinsic concentration

+T = 300; //(temperature in Kelvin)

+p0 = ni*ni/n0; // concentration of holes

+k = 0.0259; //Boltzmann's constant multiplied with T = 300

+E = k*log(n0/ni);

+disp(p0,"concentration of holes (in per cubic centimeter)=")

+disp(E,"Fermi level energy with respect to intrinsic level energy (in electron volt)=")
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diff --git a/296/CH3/EX3.6/eg3_6.sce b/296/CH3/EX3.6/eg3_6.sce
new file mode 100755
index 000000000..071e10a6e
--- /dev/null
+++ b/296/CH3/EX3.6/eg3_6.sce
@@ -0,0 +1,7 @@
+m = 9.11*10^-31; //mass of electron

+ml = 0.98*m;

+mt = 0.19*m;

+mninverse = (1/3) * ((1/ml)+(2/mt));

+mn = 1/mninverse; 

+mn0 = mn/m;

+disp(mn0,"Conductivity effective mass in proportion to mass of an electron =")
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diff --git a/296/CH3/EX3.7/eg3_7.sce b/296/CH3/EX3.7/eg3_7.sce
new file mode 100755
index 000000000..ae5719c89
--- /dev/null
+++ b/296/CH3/EX3.7/eg3_7.sce
@@ -0,0 +1,14 @@
+un= 700;

+q = 1.6*10^-19;

+n0 = 10^17;

+L = 0.1;

+A = 10^-6;

+V = 10;

+sigma = q*un*n0;

+rho = 1/sigma;

+R = rho*L/A;

+I = V/R;

+disp(sigma,"Conductivity (in per ohm-cm)=")

+disp(rho,"resistivity (in ohm-cm)=")

+disp(R,"resistance (in ohm)=")

+disp(I,"current (in ampere)=")
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diff --git a/296/CH3/EX3.8/eg3_8.sce b/296/CH3/EX3.8/eg3_8.sce
new file mode 100755
index 000000000..531daf87b
--- /dev/null
+++ b/296/CH3/EX3.8/eg3_8.sce
@@ -0,0 +1,16 @@
+w = 0.01;

+w1 = w*10^-3

+t = 10^-3;

+L = 0.5;

+B = 10*10^-5; 

+I = 10^-3;

+Vab = -2 *10^-3;

+Vcd = 0.1; 

+q = 1.6*10^-19;

+q1 = q*10^-3

+n0 = I*B/(q1*-Vab);

+rho = (Vcd/I)/(L/w1);

+u = 1/(rho*q*n0);

+disp(n0,"electron concentration (in per cubic centimeter)=")

+disp(rho,"resisitivity (in ohm-cm)=")

+disp(u,"mobility (in square cm per volt-sec)=")
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