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| author | priyanka | 2015-06-24 15:03:17 +0530 |
|---|---|---|
| committer | priyanka | 2015-06-24 15:03:17 +0530 |
| commit | b1f5c3f8d6671b4331cef1dcebdf63b7a43a3a2b (patch) | |
| tree | ab291cffc65280e58ac82470ba63fbcca7805165 /284/CH12/EX12.5/ex5.sce | |
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Diffstat (limited to '284/CH12/EX12.5/ex5.sce')
| -rwxr-xr-x | 284/CH12/EX12.5/ex5.sce | 15 |
1 files changed, 15 insertions, 0 deletions
diff --git a/284/CH12/EX12.5/ex5.sce b/284/CH12/EX12.5/ex5.sce new file mode 100755 index 000000000..ffd0d7cdd --- /dev/null +++ b/284/CH12/EX12.5/ex5.sce @@ -0,0 +1,15 @@ +// Chapter 12_The junction field effect transistor
+//Caption_The MESFET
+//Ex_5//page 567
+Nc=4.7*10^17
+e=1.6*10^-19
+eps=8.85*10^-14*13.1
+T=300
+phi_bn=0.89 //barrier height
+Nd=2*10^15
+Vt=0.25
+phi_n=0.0259*log(Nc/Nd)
+Vbi=phi_bn-phi_n //built in potential barrier
+Vpo=Vbi-Vt
+a=10^4*(Vpo*2*eps/(e*Nd))^0.5
+printf('The channel thickness of GaAs is %1.3f micrometer',a)
\ No newline at end of file |